P2260WG NIKOSEM | Alldatasheet
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N-Channel High Voltage Mode Field Effect Transistor NIKO-SEM REV 1.0 P2260WG PDFN 8x8S Halogen-Free & Lead-Free G D S ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V Continuous Drain Current2,4 TC = 25 °C ID A TC = 100 °C 14 Pulsed Drain Current1 IDM 55 Avalanche Current3 IAS 2.9 A Avalanche Energy3 EAS 168 mJ Power Dissipation TC = 25 °C PD W TC = 100 °C 27 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJc 1.8 °C / W Junction-to-Ambient RJA 62.5 °C / W 1Pulse width limited by maximum junction temperature. 2Ensure that the channel temperature does not exceed 150°C. 3VDD = 50V , L = 40mH ,starting TJ = 25°C. 4Current limited by package. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 600 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2 3.4 4 Gate-Body Leakage IGSS VDS = 0V, VGS = ±30V ±100 nA Gate Voltage Drain Current IDSS VDS = 600V, VGS = 0V , TC = 25 °C 1 VDS = 480V, VGS = 0V , TC = 100 °C 100 PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 185mΩ 22A 1:GATE 5:DRAIN 2,3,4:SOURCE
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N-Channel High Voltage Mode Field Effect Transistor NIKO-SEM REV 1.0 P2260WG PDFN 8x8S Halogen-Free & Lead-Free Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 11A 160 185 mΩ Forward Transconductance1 gfs VDS = 10V, ID = 11A 20 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 100V, f = 250KHz 1341 pF Output Capacitance Coss 63 Reverse Transfer Capacitance Crss 7.8 Effective Output Capacitance4 Co(er) VGS = 0V, VDS = 0 to 480V 55 Total Gate Charge2 Qg VDD = 480V, ID =11A, VGS = 10V nC Gate-Source Charge2 Qgs 8.5 Gate-Drain Charge2 Qgd 9.6 Turn-On Delay Time2 td(on) VGS = 10V, VDD = 300V, ID =11A, RG= 25Ω nS Rise Time2 tr 33 Turn-Off Delay Time2 td(off) 67 Fall Time2 tf 26 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 IS 22 A Forward Voltage1 VSD IF =22A, VGS = 0V 1.5 V Reverse Recovery Time trr IF =11A, dlF/dt = 100A / S 298 nS Reverse Recovery Charge Qrr 3.8 uC 1Pulse test : Pulse Width 380 sec, Duty Cycle 2％. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. 4Co(er) is a fixed capacitance that gives the same stored energy as Coss while V DS is rising from 0 to 80% V(BR)DSS.
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N-Channel High Voltage Mode Field Effect Transistor NIKO-SEM REV 1.0 P2260WG PDFN 8x8S Halogen-Free & Lead-Free Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) 25℃ 125℃ -20℃ 4.4 8.8 13.2 17.6 0 1 2 3 4 5 6 7 0 2 4 6 8 10 VGS=10V VGS=9V VGS=8V VGS=7V VGS=5.5V VGS=6V VGS=5V 0.3 0.6 0.9 1.2 1.5 2 4 6 8 10 ID=11A 0.1 0.2 0.3 0.4 0.5 0 4.4 8.8 13.2 17.6 22 VGS=10V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=11A CISS COSS CRSS 100 1000 10000 100000 0 100 200 300 400 500 600
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N-Channel High Voltage Mode Field Effect Transistor NIKO-SEM REV 1.0 P2260WG PDFN 8x8S Halogen-Free & Lead-Free Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] 0 6 12 18 24 30 VDS=480V ID=11A 150℃ 25℃ 0.1 100 300 600 900 1200 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 1.8 ˚C/W TC = 25˚C DC 100ms 10ms 1ms 0.1 100 1 10 100 1000 NOTE : 1.VGS = 10V 2.TC =25˚C 3.RθJC = 1.8 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 1.8 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC