P2206BV NIKOSEM | Alldatasheet

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N-Channel Logic Level Enhancement Mode Field Effect Transistor REV 1.0 I-22-4 P2206BV SOP-8 Halogen-free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TA = 25 °C ID A TA = 70 °C 5.3 Pulsed Drain Current1 IDM 28 Avalanche Current IAS 26 Avalanche Energy L = 0.1mH EAS 33 mJ Power Dissipation TA = 25 °C PD W TA = 70 °C 1.3 Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RθJA 61 °C / W 1Pulse width limited by maximum junction temperature. 2 The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 60 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.8 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 48V, VGS = 0V 1 VDS = 40V, VGS = 0V, TJ = 55 °C 10 G : GATE D : DRAIN S : SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 22.5mΩ 7A G D S

N-Channel Logic Level Enhancement Mode Field Effect Transistor REV 1.0 I-22-4 P2206BV SOP-8 Halogen-free & Lead-Free NIKO-SEM Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 7A 17.5 22.5 mΩ VGS = 4.5V, ID = 7A 20 30 Forward Transconductance1 gfs VDS = 5V, ID = 7A 14 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz 1005 pF Output Capacitance Coss 125 Reverse Transfer Capacitance Crss 90 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 0.9 Ω Total Gate Charge2 Qg(VGS=10V) VDS = 30V , ID = 7A nC Qg(VGS=4.5V) 14 Gate-Source Charge2 Qgs 3.2 Gate-Drain Charge2 Qgd 8.6 Turn-On Delay Time2 td(on) VDD = 30V, ID  7A , VGS = 10V, RGEN = 6Ω nS Rise Time2 tr 25 Turn-Off Delay Time2 td(off) 41 Fall Time2 tf 36 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 1.5 A Forward Voltage1 VSD IF = 7A, VGS = 0V 1.3 V Reverse Recovery Time trr IF = 7A, dI/dt=100A/μs 18 nS Reverse Recovery Charge Qrr 7 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2%. 2Independent of operating temperature.

N-Channel Logic Level Enhancement Mode Field Effect Transistor REV 1.0 I-22-4 P2206BV SOP-8 Halogen-free & Lead-Free NIKO-SEM 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=2.5V VGS=3V VGS=3.5V 0.008 0.016 0.024 0.032 0.04 0 3 6 9 12 15 VGS=10V VGS=4.5V 0.008 0.016 0.024 0.032 0.04 2 4 6 8 10 ID=7A 0 1 2 3 4 5 25℃ -20℃ 125℃ CISS COSS CRSS 200 400 600 800 1000 1200 0 5 10 15 20 25 30 0 5 10 15 20 25 VDS=30V ID=7A Qg , Total Gate Charge(nC) On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics VGS , Gate-To-Source Voltage(V)

N-Channel Logic Level Enhancement Mode Field Effect Transistor REV 1.0 I-22-4 P2206BV SOP-8 Halogen-free & Lead-Free NIKO-SEM 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=7A 0.1 100 150℃ 25℃ single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 61 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 61 ˚C/W TA = 25˚C DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS = 10V 2.TA =25˚C 3.RθJA = 61 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) Transient Thermal Response Curve VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) r(t) , Normalized Effective Transient Thermal Resistance