P2206BD NIKOSEM | Alldatasheet

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REV1.0 F-06-5 N-Channel Enhancement Mode Field Effect Transistor P2206BD TO-252 Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25 °C ID A TC = 100 °C 20 Pulsed Drain Current1 IDM 100 Avalanche Current IAS 26 Avalanche Energy L = 0.1mH EAS 33.8 mJ Power Dissipation TC = 25 °C PD 50 W TC = 100 °C 20 Junction & Storage Temperature Range TJ, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 2.5 °C / W Junction-to-Ambient RJA 62.5 1Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 60 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.75 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 48V, VGS = 0V 1 VDS = 40V, VGS = 0V, TJ = 125 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 12A 19 30 mΩ VGS = 10V , ID = 20A 17 22.5 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 22.5mΩ 32A G D S

REV1.0 F-06-5 N-Channel Enhancement Mode Field Effect Transistor P2206BD TO-252 Halogen-Free & Lead-Free NIKO-SEM Forward Transconductance1 gfs VDS = 5V, ID = 20A 40 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz 1016 pF Output Capacitance Coss 125 Reverse Transfer Capacitance Crss 81 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1 Ω Total Gate Charge2 Qg(VGS=10V) VDS = 30V , ID = 20A 23.2 nC Qg(VGS=4.5V) 13 Gate-Source Charge2 Qgs 3.2 Gate-Drain Charge2 Qgd 7.4 Turn-On Delay Time2 td(on) VDS = 30V ID  20A, VGS = 10V, RGEN =6Ω nS Rise Time2 tr 24 Turn-Off Delay Time2 td(off) 102 Fall Time2 tf 35 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 IS 32 A Forward Voltage1 VSD IF = 20A, VGS = 0V 1.3 V Reverse Recovery Time trr IF = 20A, dlF/dt = 100A / S 22 nS Reverse Recovery Charge Qrr 15 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature.

REV1.0 F-06-5 N-Channel Enhancement Mode Field Effect Transistor P2206BD TO-252 Halogen-Free & Lead-Free NIKO-SEM 0 1 2 3 4 5 On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC) 25℃ 125℃ -20℃ COSS CISS 0 1 2 3 4 5 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=4V VGS=3.5V CRSS 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 0 5 10 15 20 25 VDS=50V ID=20A 0.01 0.015 0.02 0.025 0.03 0 5 10 15 20 25 VGS=10V VGS=4.5V 0.01 0.015 0.02 0.025 0.03 2 4 6 8 10 ID=20A

REV1.0 F-06-5 N-Channel Enhancement Mode Field Effect Transistor P2206BD TO-252 Halogen-Free & Lead-Free NIKO-SEM On-Resistance VS Temperature Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] VSD, Source-To-Drain Voltage(V) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=20A 25℃ 150℃ 0.1 100 100 150 200 250 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 2.5˚C/W TC=25˚C DC 100ms 10ms 1ms 0.1 100 1000 1 10 100 NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC = 2.5˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 2.5 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC