P2060JF NIKOSEM | Alldatasheet

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REV 1.0 M-20-1 N-Channel Enhancement Mode Field Effect Transistor P2060JF TO-220F Halogen-Free & Lead-Free NIKO-SEM G D S ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V Continuous Drain Current2 TC = 25 ° C ID A TC = 100 ° C 12.7 Pulsed Drain Current1 IDM 60 Avalanche Current 3 IAS 2.8 Avalanche Energy3 EAS 294 mJ Power Dissipation TC = 25 ° C PD W TC = 100 ° C 13 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 ° C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 3.75 ° C / W Junction-to-Ambient RJA 62.5 1Pulse width limited by maximum junction temperature. 2Ensure that the channel temperature does not exceed 150°C. 3VDD = 50V , L = 75mH ,starting TJ = 25°C. 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 196mΩ 20A

REV 1.0 M-20-1 N-Channel Enhancement Mode Field Effect Transistor P2060JF TO-220F Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 600 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2 3.3 4 Gate-Body Leakage IGSS VDS = 0V, VGS = ±30V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 600V, VGS = 0V 1 VDS = 480V, VGS = 0V, TJ = 100 ° C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 10A 164 196 mΩ Forward Transconductance1 gfs VDS = 10V, ID = 10A 17 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 100V, f = 250KHz 1406 pF Output Capacitance Coss 75 Reverse Transfer Capacitance Crss 10.6 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 8.1 Ω Total Gate Charge2 Qg VDS =480V, VGS = 10V, ID = 10A nC Gate-Source Charge2 Qgs 8 Gate-Drain Charge2 Qgd 16 Turn-On Delay Time2 td(on) VDD = 300V, ID  10A, VGS = 10V, RGEN =25Ω nS Rise Time2 tr 47 Turn-Off Delay Time2 td(off) 157 Fall Time2 tf 50 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 20 A Forward Voltage1 VSD IF = 20A , VGS = 0V 1.2 V Reverse Recovery Time trr IF = 10A , dIF/dt= 100A/μs 317 nS Reverse Recovery Charge Qrr 4.2 uC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature.

REV 1.0 M-20-1 N-Channel Enhancement Mode Field Effect Transistor P2060JF TO-220F Halogen-Free & Lead-Free NIKO-SEM Output Characteristics Transfer Characteristics ID, Drain-To-Source Current(A) ID, Drain-To-Source Current(A) VDS, Drain-To-Source Voltage(V) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) On-Resistance VS Temperature Capacitance Characteristic Normalized Drain to Source ON-Resistance C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) TJ , Junction Temperature(˚C) 0.1 0.2 0.3 0.4 0.5 0 5 10 15 20 VGS=10V 0.1 0.2 0.3 0.4 0.5 2 4 6 8 10 ID=10A 25℃ 0 2 4 6 8 10 125℃ -20℃ 0 1 2 3 4 5 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5.5V VGS=5V 0.0 0.6 1.2 1.8 2.4 3.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=10A CISS COSS CRSS 100 1000 10000 0 100 200 300 400 500 600

REV 1.0 M-20-1 N-Channel Enhancement Mode Field Effect Transistor P2060JF TO-220F Halogen-Free & Lead-Free NIKO-SEM VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage Gate charge Characteristics Characteristics IS , Source Current(A) Qg , Total Gate Charge(nC) VSD, Source-To-Drain Voltage(V) Single Pulse Maximum Power Dissipation Safe Operating Area ID , Drain Current(A) Power(W) VDS, Drain-To-Source Voltage(V) Single Pulse Time(s) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(S) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 3.75 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC 0 8 16 24 32 40 VDS=480V ID=10A 0.1 100 150℃ 25℃ 125 250 375 500 625 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 3.75 ˚C/W TC = 25˚C DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 1000 NOTE : 1.VGS = 10V 2.TC =25˚C 3.RθJC = 3.75 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON)