P2020YD NIKOSEM | Alldatasheet
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N-Channel Enhancement Mode Field Effect Transistor P2020YD TO-252 Halogen-Free & Lead-Free NIKO-SEM REV 1.0 PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 200V 95mΩ 20A ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25 ° C ID A TC = 100 ° C 12.7 Pulsed Drain Current1 IDM 50 Avalanche Current IAS 7.7 Avalanche Energy L = 1mH EAS 30 mJ Power Dissipation TC = 25 ° C PD 96 W TC = 100 ° C 38 Junction & Storage Temperature Range TJ, Tstg -55 to 150 ° C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient RJA 62.5 ° C / W Junction-to-Case RJC 1.3 1Pulse width limited by maximum junction temperature. .ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 200 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.8 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 200V, VGS = 0V 1 A VDS = 160V, VGS = 0V, TJ = 125 ° C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 10A 73 100 mΩ VGS =10V, ID = 10A 71 95 1: GATE 2: DRAIN 3: SOURCE G D S
N-Channel Enhancement Mode Field Effect Transistor P2020YD TO-252 Halogen-Free & Lead-Free NIKO-SEM REV 1.0 Forward Transconductance1 gfs VDS = 10V, ID = 10A 54 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz 2050 pF Output Capacitance Coss 157 Reverse Transfer Capacitance Crss 71 Total Gate Charge2 Qg(VGS=10V) VDS = 160V , ID =20A nC Qg(VGS=4.5V) 21 Gate-Source Charge2 Qgs 6 Gate-Drain Charge2 Qgd 10 Turn-On Delay Time2 td(on) VDS = 100V , ID 10A, VGS = 10V, RGEN =25Ω nS Rise Time2 tr 43 Turn-Off Delay Time2 td(off) 62 Fall Time2 tf 104 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Continuous Current IS 20 A Forward Voltage1 VSD IF = 20A, VGS = 0V 1 V Diode Reverse Recovery Time trr IF= 20A, dI/dt=100A/μs 88 nS Diode Reverse Recovery Charge Qrr 236 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2%. 2Independent of operating temperature.
N-Channel Enhancement Mode Field Effect Transistor P2020YD TO-252 Halogen-Free & Lead-Free NIKO-SEM REV 1.0 Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) 25℃ 125℃ -20℃ 0 1 2 3 4 5 CISS COSS CRSS 500 1000 1500 2000 2500 0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=10A 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3.1V VGS=2.7V VGS=2.9V 0.03 0.06 0.09 0.12 0 3 6 9 12 15 VGS=10V VGS=4.5V 0.05 0.1 0.15 0.2 2 4 6 8 10 ID=10A
N-Channel Enhancement Mode Field Effect Transistor P2020YD TO-252 Halogen-Free & Lead-Free NIKO-SEM REV 1.0 VSD, Source-To-Drain Voltage(V) Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(S) 0 10 20 30 40 50 VDS=160V ID=20A 25℃ 150℃ 0.1 100 400 800 1200 1600 2000 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 1.3 ˚C/W TC = 25˚C DC 100ms 10ms 1ms 0.1 100 1 10 100 1000 NOTE : 1.VGS = 10V 2.TC =25˚C 3.RθJC = 1.3 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 1.3 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC