P2003KV NIKOSEM | Alldatasheet
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Dual P-Channel Enhancement Mode Field Effect Transistor P2003KV SOP-8 Halogen-Free & Lead-Free NIKO-SEM Sep-21-2009 REV 0.9 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±25 V Continuous Drain Current TA = 25 °C ID A TA = 70 °C -6 Pulsed Drain Current1 IDM -40 Avalanche Current IAS -30 Avalanche Energy L = 0.1mH EAS 45 mJ Power Dissipation TA = 25 °C PD 2 W TA = 70 °C 1.28 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient RJA 62.5 °C / W 1Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (TA = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250A -30 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250A -1 -1.5 -3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±25V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = -24V, VGS = 0V -1 VDS = -20V, VGS = 0V, TJ = 125 °C -10 Drain-Source On-State Resistance1 RDS(ON) VGS = -4.5V, ID = -7A 29 34 mΩ VGS = -10V, ID = -9A 20 22 Forward Transconductance1 gfs VDS = -5V, ID = -9A 20 S PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 22mΩ -8A G S D G S D G : GATE D : DRAIN S : SOURCE
Dual P-Channel Enhancement Mode Field Effect Transistor P2003KV SOP-8 Halogen-Free & Lead-Free NIKO-SEM Sep-21-2009 REV 0.9 DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = -15V, f = 1MHz 1480 pF Output Capacitance Coss 334 Reverse Transfer Capacitance Crss 231 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 2.9 Ω Total Gate Charge2 Qg VGS= -10V VDS = 0.5V(BR)DSS, VGS = -10V, ID = -9A nC VGS= -4.5V Gate-Source Charge2 Qgs 5 Gate-Drain Charge2 Qgd 6 Turn-On Delay Time2 td(on) 13 nS Rise Time2 tr VDS = -15V, 8 Turn-Off Delay Time2 td(off) ID -9A, VGS = -10V, RGS = 6Ω 16 Fall Time2 tf 12 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TA = 25 °C) Continuous Current IS -2 A Forward Voltage1 VSD IF = -9A, VGS = 0V -1 V Reverse Recovery Time trr IF= -9A, dI/dt=100A/μs 40 nS Reverse Recovery Charge Qrr 26 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature. REMARK: THE PRODUCT MARKED WITH “P2003KV”, DATE CODE or LOT #
Dual P-Channel Enhancement Mode Field Effect Transistor P2003KV SOP-8 Halogen-Free & Lead-Free NIKO-SEM Sep-21-2009 REV 0.9 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 -50 -25 0 25 50 75 100 125 150 RDS(ON) ╳ VGS=-10V ID=-9A RDS(ON) ╳ RDS(ON) ╳ RDS(ON) ╳ RDS(ON) ╳ RDS(ON) ╳ RDS(ON) ╳ RDS(ON) ╳ RDS(ON) ╳ 0 5 10 15 20 25 30 ID=-9A VDS=-15V 0 0.5 1 1.5 2 2.5 VGS = 3V VGS = 4.5V VGS = 7V VGS = 10V VGS = 4.5V 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 VGS = 10V 5 10 15 20 25 0 2 4 6 8 10 ID = -9A 0.02 0.04 0.06 0.08 0.10 Tj=125°C Tj=-20°C Tj=25°C VDS= -15V Output Characteristics -ID, Drain-To-Source Current(A) -VDS, Drain-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) -ID , Drain-To-Source Current On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) -VGS, Gate-To-Source Voltage(V) On-Resistance VS Temperature RDS(ON)ON-Resistance(OHM) TJ , Junction Temperature(˚C) Transfer Characteristics -ID, Drain-To-Source Current(A) -VGS, Gate-To-Source Voltage(V) Gate charge Characteristics Characteristics -VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge
Dual P-Channel Enhancement Mode Field Effect Transistor P2003KV SOP-8 Halogen-Free & Lead-Free NIKO-SEM Sep-21-2009 REV 0.9 Capacitance Characteristic Body Diode Forward Voltage VS Source current single Pluse Duty Cycle=0.5 0.2 0.1 0.05 0.02 0.01 1.00E-03 1.00E-02 1.00E-01 1.00E+00 1.00E+01 Note 1.Duty cycle, D= t1 / t2 2.RthJA = 62.5 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA Ciss Coss Crss 0.00E+00 4.00E+02 8.00E+02 1.20E+03 1.60E+03 2.00E+03 0 5 10 15 20 25 30 100 0.0001 0.001 0.01 0.1 1 10 SINGLE PULSE RθJA = 62.5˚C/W TA=25˚C 1ms 100us 10S DC 100ms 10ms 0.01 0.1 100 1000 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 62.5˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 1.0E+01 TJ =150°C TJ =25°C 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E+02 C , Capacitance(pF) -VDS, Drain-To-Source Voltage(V) -IS , Source Current(A) -VSD, Source-To-Drain Voltage(V) T1 , Square Wave Pulse Duration[sec] r(t) , Normalized Effective Transient Thermal Resistance -ID , Drain Current(A) Transient Thermal Response Curve Single Pulse Time(s) Safe Operating Area -VDS, Drain-To-Source Voltage(V) Power(W) Single Pulse Maximum Power Dissipation