P2003BDG_V01 NIKOSEM | Alldatasheet
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REV 1.0 Sep-09-2009 N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM P2003BDG TO-252 (DPAK) Halogen -Free & Lead-Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 25 V Gate-Source Voltage VGS ±20 V TC = 25 °C 32 Continuous Drain Current TC = 100 °C ID Pulsed Drain Current1 IDM 110 Avalanche Current IAS 23 A Avalanche Energy L = 0.1mH EAS 27 mJ TC = 25 °C 35 Power Dissipation TC = 100 °C PD W Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 3.6 Junction-to-Ambient RJA 75 Case-to-Heatsink RCS 0.7 °C / W 1Pulse width limited by maximum junction temperature. 2Duty cycle 1％ ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 25 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.0 1.8 2.5 V Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±250 nA VDS = 20V, VGS = 0V 25 Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V, TJ = 125 °C 250 On-State Drain Current1 ID(ON) VDS = 10V, VGS = 10V 110 A 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25V 20mΩ 32A G D S
REV 1.0 Sep-09-2009 N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM P2003BDG TO-252 (DPAK) Halogen -Free & Lead-Free VGS = 4.5V, ID = 10A 29 41 Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 15A 14 20 mΩ Forward Transconductance1 gfs VDS = 5V, ID = 15A 19 S DYNAMIC Input Capacitance Ciss 492 Output Capacitance Coss 221 Reverse Transfer Capacitance Crss VGS = 0V, VDS = 15V, f = 1MHz 187 pF Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.5 Ω Qg (VGS=10V) 14.7 Total Gate Charge2 Qg(VGS=4.5V) 7.7 Gate-Source Charge2 Qgs 2.3 Gate-Drain Charge2 Qgd VDS = 15V, ID = 15A 5.6 nC Turn-On Delay Time2 td(on) 10 Rise Time2 tr VDD = 15V 17 Turn-Off Delay Time2 td(off) ID 15A, VGS = 10V, RGS = 6Ω 34 Fall Time2 tf 27 nS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current IS 25 A Forward Voltage1 VSD IF = 15A, VGS = 0V 1.4 V Reverse Recovery Time trr 27 nS Reverse Recovery Charge Qrr IF = 15A, dlF/dt = 100A / S 36 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature. REMARK: THE PRODUCT MARKED WITH “P2003BDG”, DATE CODE or LOT #
REV 1.0 Sep-09-2009 N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM P2003BDG TO-252 (DPAK) Halogen -Free & Lead-Free Source-Drain Diode Forward Voltage Ciss Coss Crss 0.00E+00 1.00E+02 2.00E+02 3.00E+02 4.00E+02 5.00E+02 6.00E+02 7.00E+02 8.00E+02 0 5 10 15 20 25 30 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 RDS(ON) ╳ VGS=10V ID=15A RDS(ON) ╳ RDS(ON) ╳ RDS(ON) ╳ RDS(ON) ╳ RDS(ON) ╳ RDS(ON) ╳ RDS(ON) ╳ RDS(ON) ╳ 0 3 6 9 12 15 ID=15A VDS=15V 100 TJ=25°C TJ=-20°C TJ=125° C 0 1 2 3 4 5 100 VGS = 3V VGS = 10V VGS = 4.5V VGS = 6V 1.0E+01 TJ =150 ° C TJ =25 °C 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E+02 1.0E+03 1.4 Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature RDS(ON),ON-Resistance(OHM) TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics Qg , Total Gate Charge VGS , Gate-To-Source Voltage(V) VSD, Source-To-Drain Voltage(V) IS , Source Current(A)
REV 1.0 Sep-09-2009 N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM P2003BDG TO-252 (DPAK) Halogen -Free & Lead-Free single Pluse Duty Cycle=0.5 0.2 0.1 0.05 0.02 0.01 1.00E-02 1.00E-01 1.00E+00 1.00E+01 Note 1.Duty cycle, D= t1 / t2 2.RthJC = 3.6 oC/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC 100 200 300 400 500 0.0001 0.001 0.01 0.1 1 10 SINGLE PULSE RθJC = 3.6˚C/W TC=25˚C 1ms 100us DC 10ms 100 1000 1 10 100 NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC = 3.6˚C/W 4.Single Pulse Operation in This Area is Limited by R DS(ON) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec]
REV 1.0 Sep-09-2009 N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM P2003BDG TO-252 (DPAK) Halogen -Free & Lead-Free