P1765VTF NIKOSEM | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
1 H-32-1
N-Channel High Voltage Mode Field Effect Transistor NIKO-SEM REV 1.0 P1765VTF TO-220F Halogen-Free & Lead-Free ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS ±30 V Continuous Drain Current2 TC = 25 °C ID A TC = 100 °C 10 Pulsed Drain Current1 IDM 51 Avalanche Current3 IAS 4.3 A Avalanche Energy3 EAS 369 mJ Power Dissipation TC = 25 °C PD W TC = 100 °C 17.8 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJc 2.8 °C / W Junction-to-Ambient RJA 62.5 °C / W 1Pulse width limited by maximum junction temperature. 2Ensure that the channel temperature does not exceed 150°C. 3VDD = 50V , L = 40mH ,starting TJ = 25°C. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 650 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2 3.4 4 Gate-Body Leakage IGSS VDS = 0V, VGS = ±30V ±100 nA Gate Voltage Drain Current IDSS VDS = 650V, VGS = 0V , TC = 25 °C 1 VDS = 520V, VGS = 0V , TC = 100 °C 10 PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 650V 225mΩ 17A G D S 2 31 1. GATE 2. DRAIN 3. SOURCE
2 H-32-1
N-Channel High Voltage Mode Field Effect Transistor NIKO-SEM REV 1.0 P1765VTF TO-220F Halogen-Free & Lead-Free Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 8.5A 177 225 mΩ Forward Transconductance1 gfs VDS = 10V, ID = 8.5A 18 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 100V, f = 250KHz 1529 pF Output Capacitance Coss 81 Reverse Transfer Capacitance Crss 6.5 Effective Output Capacitance4 Co(er) VGS = 0V, VDS = 0 to 520V 59 Total Gate Charge2 Qg VDD = 520V, ID = 8.5A, VGS = 10V nC Gate-Source Charge2 Qgs 7.6 Gate-Drain Charge2 Qgd 15 Turn-On Delay Time2 td(on) VDD = 325V, ID = 8.5A, RG= 25Ω, VGS = 10V nS Rise Time2 tr 40 Turn-Off Delay Time2 td(off) 149 Fall Time2 tf 38 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 IS 17 A Forward Voltage1 VSD IF = 17A, VGS = 0V 1 V Reverse Recovery Time trr IF = 8.5A, dlF/dt = 100A / S 286 nS Reverse Recovery Charge Qrr 3.2 uC 1Pulse test : Pulse Width 380 sec, Duty Cycle 2％. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. 4Co(er) is a fixed capacitance that gives the same stored energy as Coss while V DS is rising from 0 to 80% V(BR)DSS.
3 H-32-1
N-Channel High Voltage Mode Field Effect Transistor NIKO-SEM REV 1.0 P1765VTF TO-220F Halogen-Free & Lead-Free 0.2 0.4 0.6 0.8 2 4 6 8 10 ID=8.5A 0 2 4 6 8 10 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=5.5V 25℃ 125℃ -20℃ 0 1 2 3 4 5 6 7 Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) 0.1 0.2 0.3 0.4 0.5 0 6 12 18 24 30 VGS=10V CISS COSS CRSS 100 1000 10000 0 140 280 420 560 700 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=8.5A c
4 H-32-1
N-Channel High Voltage Mode Field Effect Transistor NIKO-SEM REV 1.0 P1765VTF TO-220F Halogen-Free & Lead-Free 140 280 420 560 700 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 2.8 ˚C/W TC=25˚C DC 100ms 10ms 1ms 0.01 0.1 100 1 10 100 1000 NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC = 2.8˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0 9 18 27 36 45 VDS=520V ID=8.5A Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(S) 25℃ 150℃ 0.1 100 single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 2.8 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC