P1615ATA NIKOSEM | Alldatasheet

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REV1.0 G-32-2 N-Channel Enhancement Mode Field Effect Transistor P1615ATA TO-220 Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS ±25 V Continuous Drain Current TC = 25 °C ID A TC = 100 °C 43 Pulsed Drain Current1 IDM 270 Avalanche Current IAS 30 Avalanche Energy L = 1mH EAS 435 mJ Power Dissipation TC = 25 °C PD 192 W TC = 100 °C 77 Junction & Storage Temperature Range TJ, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 0.65 °C / W Junction-to-Ambient RJA 62.5 1Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 150 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2.5 3.5 4.5 Gate-Body Leakage IGSS VDS = 0V, VGS = ±25V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 120V, VGS = 0V 1 VDS = 100V, VGS = 0V, TJ = 125 °C 10 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 150V 16.5mΩ 68A G D S

REV1.0 G-32-2 N-Channel Enhancement Mode Field Effect Transistor P1615ATA TO-220 Halogen-Free & Lead-Free NIKO-SEM Drain-Source On-State Resistance1 RDS(ON) VGS = 7V, ID = 20A 14 18.5 mΩ VGS = 10V, ID = 20A 13 16.5 Forward Transconductance1 gfs VDS = 10V, ID = 20A 34 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz 3452 pF Output Capacitance Coss 530 Reverse Transfer Capacitance Crss 209 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.4 Ω Total Gate Charge2 Qg VGS = 10V , VDS = 75V , ID = 20A nC Gate-Source Charge2 Qgs 17 Gate-Drain Charge2 Qgd 28 Turn-On Delay Time2 td(on) VDS = 75V ID  20A, VGS = 10V, RGEN =6Ω nS Rise Time2 tr 56 Turn-Off Delay Time2 td(off) 55 Fall Time2 tf 67 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 68 A Forward Voltage1 VSD IF = 20A, VGS = 0V 1.2 V Reverse Recovery Time trr IF = 20A, dlF/dt = 100A / S 80 nS Reverse Recovery Charge Qrr 225 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature.

REV1.0 G-32-2 N-Channel Enhancement Mode Field Effect Transistor P1615ATA TO-220 Halogen-Free & Lead-Free NIKO-SEM Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) On-Resistance VS Temperature Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics 25℃ 125℃ -20℃ 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=20A CISS COSS CRSS 500 1000 1500 2000 2500 3000 3500 4000 4500 0 5 10 15 20 25 30 25℃ 150℃ 0.1 100 0 20 40 60 80 VDS=75V ID=20A 0 2 4 6 8 10 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=4.5V VGS=5V

REV1.0 G-32-2 N-Channel Enhancement Mode Field Effect Transistor P1615ATA TO-220 Halogen-Free & Lead-Free NIKO-SEM Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve T1 , Square Wave Pulse Duration[sec] On-Resistance VS Gate-To-Source Voltage -VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) -ID , Drain-To-Source Current r(t) , Normalized Effective Transient Thermal Resistance RDS(ON)ON-Resistance(OHM) 0.04 0.08 0.12 0.16 0.2 2 4 6 8 10 ID=20A 0.008 0.016 0.024 0.032 0.04 0 6 12 18 24 VGS=10V VGS=4.5V DC 100ms 10ms 1ms 0.1 100 1000 1 10 100 NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC = 0.65˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 500 1000 1500 2000 2500 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 0.65˚C/W TC=25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 0.65 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC