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REV 1.1 F-46-1 P1610ATF TO-220F Halogen-Free & Lead-Free NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage V GS ±20 V Continuous Drain Current2 TC = 25 °C ID A TC = 100 °C 21 Pulsed Drain Current1,2 I DM 120 Avalanche Current I AS 12 Avalanche Energy L = 1mH E AS 72 mJ Power Dissipation TC = 25 °C PD W TC = 100 °C 19 Mounting Torque3 Machine Screw 5 Kgf.cm 0.49 N.m Operating Junction & Storage Temperature Range T j, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 2.6 °C / W Junction-to-Ambient RJA 62.5 °C / W 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3Not suggest using Self-Tapping screw. ELECTRICAL CHARACTERISTICS (T J = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250A 110 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A 2 3.2 4 Gate-Body Leakage I GSS V DS = 0V, VGS = ±20V ±100 nA 1.GATE 2.DRAIN 3.SOURCE PRODUCT SUMMARY V(BR)DSS R DS(ON) I D 110V 16mΩ 34A G D S 231

REV 1.1 F-46-1 P1610ATF TO-220F Halogen-Free & Lead-Free NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor Zero Gate Voltage Drain Current I DSS VDS = 88V, VGS = 0V 1 VDS = 80V, VGS = 0V, TJ = 125 °C 10 Drain-Source On-State Resistance1 R DS(ON) VGS = 7V, ID = 15A 13.5 21 mΩ VGS = 10V, ID = 20A 12.5 16 Forward Transconductance1 g fs V DS = 10V, ID = 20A 80 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 25V, f = 1MHz 3009 pFOutput Capacitance C oss 258 Reverse Transfer Capacitance C rss 152 Gate Resistance R g V GS = 0V, VDS = 0V ,f = 1MHz 0.81 Ω Total Gate Charge2 Q g VDS = 55V, VGS = 10V, ID = 20A nCGate-Source Charge2 Q gs 15.8 Gate-Drain Charge2 Q gd 20 Turn-On Delay Time2 t d(on) VDD = 55V ID  20A, VGS = 10V, RGEN = 6Ω nS Rise Time2 t r 88 Turn-Off Delay Time2 t d(off) 86 Fall Time2 t f 83 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current I S 36 A Forward Voltage1 V SD I F = 20A,VGS = 0V 1.2 V Reverse Recovery Time t rr IF = 20A, dlF/dt = 100A / S 37 nS Reverse Recovery Charge Q rr 50 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2%. 2Independent of operating temperature.

REV 1.1 F-46-1 P1610ATF TO-220F Halogen-Free & Lead-Free NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=20A 0 1 02 03 04 05 06 0 VDS=55V ID=20A CISS COSS CRSS 500 1000 1500 2000 2500 3000 3500 4000 0 5 10 15 20 25 30 25℃150℃ 0.1 100 25℃ 125℃ -20℃ 01234567 01234567 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) TJ , Junction Temperature(˚C) Capacitance Characteristic VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) On-Resistance VS Temperature Normalized Drain to Source ON-Resistance C , Capacitance(pF)

REV 1.1 F-46-1 P1610ATF TO-220F Halogen-Free & Lead-Free NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor Safe Operating Area Single Pu lse Maximum Power Dissipation Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) 100 150 200 250 300 350 400 450 500 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 2.6˚C/W TC=25˚C DC 100ms 10ms 1ms 0.1 100 1000 1 10 100 1000 NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC = 2.6˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 2.6 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC