P1610AT NIKOSEM | Alldatasheet
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REV 1.0 E-28-2 N-Channel Logic Level Enhancement Mode Field Effect Transistor P1610AT TO-220 Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS ±20 V Continuous Drain Current2 TC = 25 °C ID A TC = 100 °C 32 Pulsed Drain Current1,2 IDM 150 Avalanche Current IAS 12 Avalanche Energy L = 1mH EAS 72 mJ Power Dissipation TC = 25 °C PD W TC = 100 °C 38 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 1.3 °C / W Junction-to-Ambient RJA 62.5 °C / W 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 110 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2 3.2 4 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 88V, VGS = 0V 1 VDS = 80V, VGS = 0V, TJ = 125 °C 10 1.GATE 2.DRAIN 3.SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 110V 16mΩ 51A G D S
REV 1.0 E-28-2 N-Channel Logic Level Enhancement Mode Field Effect Transistor P1610AT TO-220 Halogen-Free & Lead-Free NIKO-SEM Drain-Source On-State Resistance1 RDS(ON) VGS = 7V, ID = 15A 14 21 mΩ VGS = 10V, ID = 20A 13 16 Forward Transconductance1 gfs VDS = 10V, ID = 20A 80 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz 3009 pF Output Capacitance Coss 258 Reverse Transfer Capacitance Crss 152 Gate Resistance Rg VGS = 0V, VDS = 0V ,f = 1MHz 0.81 Ω Total Gate Charge2 Qg VDS = 55V, VGS = 10V, ID = 20A nC Gate-Source Charge2 Qgs 15.8 Gate-Drain Charge2 Qgd 20 Turn-On Delay Time2 td(on) VDD = 55V ID 20A, VGS = 10V, RGEN = 6Ω nS Rise Time2 tr 88 Turn-Off Delay Time2 td(off) 86 Fall Time2 tf 83 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 51 A Forward Voltage1 VSD IF = 20A,VGS = 0V 1.2 V Reverse Recovery Time trr IF = 20A, dlF/dt = 100A / S 37 nS Reverse Recovery Charge Qrr 50 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2%. 2Independent of operating temperature.
REV 1.0 E-28-2 N-Channel Logic Level Enhancement Mode Field Effect Transistor P1610AT TO-220 Halogen-Free & Lead-Free NIKO-SEM 0 10 20 30 40 50 60 VDS=55V ID=20A 25℃ 150℃ 0.1 100 CISS COSS CRSS 500 1000 1500 2000 2500 3000 3500 0 5 10 15 20 25 30 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=20A 25℃ 125℃ -20℃ 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) TJ , Junction Temperature(˚C) Capacitance Characteristic VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) On-Resistance VS Temperature Normalized Drain to Source ON-Resistance C , Capacitance(pF)
REV 1.0 E-28-2 N-Channel Logic Level Enhancement Mode Field Effect Transistor P1610AT TO-220 Halogen-Free & Lead-Free NIKO-SEM DC 100ms 10ms 1ms 0.1 100 1000 1 10 100 1000 NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC = 1.3 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 1.3 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC 120 240 360 480 600 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 1.3 ˚C/W TC=25˚C Safe Operating Area Single Pulse Maximum Power Dissipation Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V)