P1610AD NIKOSEM | Alldatasheet

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REV 1.0 E-28-1 N-Channel Enhancement Mode Field Effect Transistor P1610AD TO-252 Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 110 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25 °C ID A TC = 100 °C 28 Pulsed Drain Current1 IDM 80 Avalanche Current IAS 13.7 Avalanche Energy2 EAS 93 mJ Power Dissipation TC = 25 °C PD 83 W TC = 100 °C 33 Junction & Storage Temperature Range TJ, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 1.5 °C / W 1Pulse width limited by maximum junction temperature. 2Starting Tj =25 °C,L=1mH,VDD=50V ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 110 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2 3.5 4 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 80V, VGS = 0V 1 VDS=80V, VGS=0V, TJ=125 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 7V, ID = 15A 14 21 mΩ VGS = 10V, ID = 20A 13 16 Forward Transconductance1 gfs VDS = 10V, ID = 20A 63 S 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 110V 16mΩ 45A G D S

REV 1.0 E-28-1 N-Channel Enhancement Mode Field Effect Transistor P1610AD TO-252 Halogen-Free & Lead-Free NIKO-SEM DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz 3017 pF Output Capacitance Coss 255 Reverse Transfer Capacitance Crss 152 Total Gate Charge2 Qg VDS = 55V, ID = 20A VGS = 10V nC Gate-Source Charge2 Qgs 16.5 Gate-Drain Charge2 Qgd 21.5 Turn-On Delay Time2 td(on) VDD = 55V, ID  20A, VGS = 10V, RGS = 6Ω nS Rise Time2 tr 90 Turn-Off Delay Time2 td(off) 77 Fall Time2 tf 55 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 45 A Forward Voltage1 VSD IF = 20A, VGS = 0V 1.2 V Reverse Recovery Time trr IF = 20A, dlF/dt = 100A / S 37 nS Reverse Recovery Charge Qrr 48 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature.

REV 1.0 E-28-1 N-Channel Enhancement Mode Field Effect Transistor P1610AD TO-252 Halogen-Free & Lead-Free NIKO-SEM 0 1 2 3 4 5 6 On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC) 25℃ 125℃ -20℃ 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5.5V VGS=5V 0.01 0.012 0.014 0.016 0.018 0.02 0 3 6 9 12 15 VGS=10V VGS=7V 0.005 0.01 0.015 0.02 0.025 0.03 5 6 7 8 9 10 ID=20A CISS COSS CRSS 0 500 1000 1500 2000 2500 3000 3500 4000 0 5 10 15 20 25 30 0 10 20 30 40 50 60 VDS=55V ID=20A

REV 1.0 E-28-1 N-Channel Enhancement Mode Field Effect Transistor P1610AD TO-252 Halogen-Free & Lead-Free NIKO-SEM On-Resistance VS Temperature Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] VSD, Source-To-Drain Voltage(V) 25℃ 150℃ 0.1 100 0.4 0.9 1.4 1.9 2.4 2.9 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=20A 200 400 600 800 1000 1200 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 1.5˚C/W TC=25˚C DC 100ms 10ms 1ms 0.1 100 1000 0.1 1 10 100 1000 NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC = 1.5˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 1.5 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC