P1604ETF

P1604ETF NIKOSEM | Alldatasheet

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P-Channel Logic Level Enhancement Mode Field Effect Transistor P1604 E TF TO-220F Halogen-Free & Lead-Free NIKO -SEM REV 1.2 May-04-2011 ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS -40 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25 °C ID -40 A TC = 100 °C -25 Pulsed Drain Current 1 IDM -120 Avalanche Current IAS -40 Avalanche Energy L = 0.1mH E AS 78 mJ Power Dissipation TC = 25 °C PD W TC = 100 °C 17 Operating Junction & Storage Temperature Range Tj, T stg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RθJc 3 °C / W Junction-to-Ambient RθJA 60 1Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (T J = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, I D = -250 µA -40 V Gate Threshold Voltage V GS(th) VDS = V GS , I D = -250 µA -1.5 -2.2 -3 Gate-Body Leakage I GSS V DS = 0V, V GS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = -32V, V GS = 0V 1 µA VDS = -30V, V GS = 0V, T J = 125 °C 10 On-State Drain Current 1 I D(ON) V DS = -5V, V GS = -10V -120 A PRODUCT SUMMARY V(BR)DSS R DS(ON) ID -40V 16m Ω -40A G S D 1. GATE 2. DRAIN 3. SOURCE 2 31

P-Channel Logic Level Enhancement Mode Field Effect Transistor P1604 E TF TO-220F Halogen-Free & Lead-Free NIKO -SEM REV 1.2 May-04-2011 Drain-Source On-State Resistance

1 RDS(ON)

VGS = -7V, I D = -15A 16 20 mΩ VGS = -10V, I D = -25A 13 16 Forward Transconductance 1 g fs V DS = -10V, I D = -25A 38 S DYNAMIC Input Capacitance C iss VGS = 0V, V DS = -20V, f = 1MHz 2310 pF Output Capacitance C oss 438 Reverse Transfer Capacitance Crss 320 Gate Resistance Rg V GS = 0V, V DS = 0V, f = 1MHz 4.3 Ω Total Gate Charge 2 Q g VDS = 0.5V (BR)DSS , V GS = -10V, ID = -25A nC Gate-Source Charge 2 Q gs 12 Gate-Drain Charge 2 Q gd 11 Turn-On Delay Time 2 t d(on) 15 nS Rise Time 2 t r V DS = -20V 43 Turn-Off Delay Time 2 t d(off) ID ≅ -25A, V GS = -10V, R GS = 6 Ω 62 Fall Time 2 t f 50 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T J = 25 °C) Continuous Current I S -40 A Forward Voltage 1 V SD I F = -25A, V GS = 0V 1.3 V Reverse Recovery Time t rr IF = -25A, dl F/dt = 100A / µS 43 nS Reverse Recovery Charge Q rr 31 nC 1Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2％. 2Independent of operating temperature.

P-Channel Logic Level Enhancement Mode Field Effect Transistor P1604 E TF TO-220F Halogen-Free & Lead-Free NIKO -SEM REV 1.2 May-04-2011 VGS =5V VGS =4V VGS=4.5V 0 1 2 3 4 5 VGS =10V VGS= 9V VGS= 8V VGS= 7V VGS= 6V 25 ℃℃ ℃℃ 125 ℃℃ ℃℃ -20 ℃℃ ℃℃ 0 1 2 3 4 5 6 0 10 20 30 40 50 ID =-25A VDS =-20V 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 RDS(ON) ╳╳ ╳╳ VGS =-10V ID =-25A RDS(ON) ╳╳ ╳╳ RDS(ON) ╳╳ ╳╳ RDS(ON) ╳╳ ╳╳ RDS(ON) ╳╳ ╳╳ RDS(ON) ╳╳ ╳╳ RDS(ON) ╳╳ ╳╳ RDS(ON) ╳╳ ╳╳ RDS(ON) ╳╳ ╳╳ VGS = 10V 0 10 20 30 50 VGS = 4.5V VGS = 4V VGS = 5V VGS = 7V 0 2 4 6 8 10 ID = -25A Output Characteristics -ID , Drain-To-Source Current(A) -VDS , Drain-To-Source Voltage(V) On -Resistance VS Drain Current RDS(ON) ON-Resistance(mOHM) -ID , Drain -To -Source Current On -Resistance VS Gate -To -Source RDS(ON) ON-Resistance(mOHM) -VGS , Gate-To-Source Voltage(V) On -Resistance VS Temperature RDS(ON) ON-Resistance(OHM) TJ , Junction Temperature(˚C) Transfer Characteristics -ID , Drain-To-Source Current(A) -VGS , Gate-To-Source Voltage(V) Gate charge Characteristics Characteristics -VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC)

P-Channel Logic Level Enhancement Mode Field Effect Transistor P1604 E TF TO-220F Halogen-Free & Lead-Free NIKO -SEM REV 1.2 May-04-2011 single Pluse Duty Cycle=0.5 0.2 0.1 0.05 0.02 0.01 1.00E-03 1.00E-02 1.00E-01 1.00E+00 1.00E+01 Ciss Coss Crss 0.00E+00 5.00E+02 1.00E+03 1.50E+03 2.00E+03 2.50E+03 3.00E+03 0 5 10 15 20 25 30 -VDS , Drain-To-Source Voltage(V) T1 , Square Wave Pulse Duration[sec] Note 1.Duty cycle, D= t1 / t2 2.Rth JC = 3 ℃℃ ℃℃/W 3.T J-TC = P*RthJC(t) 4.R thJC(t) = r(t)*R thJC 1ms 100us DC 100ms 10ms 0.1 100 1000 1 10 100 NOTE : 1.V GS = 10V 2.T C=25 ˚˚ ˚˚C 3.R θJC = 3 ˚˚ ˚˚C/W 4.Single Pulse Operation in This Area is Limited by R DS(ON) ↓↓ ↓↓ 500 1000 1500 2000 0.0001 0.001 0.01 0.1 1 10 SINGLE PULSE R θJC = 3 ˚˚ ˚˚C/W TC=25 ˚˚ ˚˚C 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E+03 1.0E+02 T J =150° C TJ =25° C Capacitance Characteristic C , Capacitance(pF) Body Diode Forward Voltage VS Source current -IS , Source Current(A) -VSD , Source-To-Drain Voltage(V) r(t) , normalized Effective Transient Thermal Resistance -ID , Drain Current(A) Transient Thermal Response Curve Safe Operating Area -VDS , Drain-To-Source Voltage(V) Power(W) Single Pulse Maximum Power Dissipation Single Pulse Time(s)