P1603BEX NIKOSEM | Alldatasheet
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REV1.0 E-21-1 N-Channel Enhancement Mode Field Effect Transistor P1603BEX PDFN 2x2S Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current3 TC = 25 °C ID A TC = 100 °C 15 TA = 25 °C 8 TA = 70 °C 6.3 Pulsed Drain Current1 IDM 60 Avalanche Current IAS 20.5 Avalanche Energy L = 0.1mH EAS 21 mJ Power Dissipation TC = 25 °C PD W TC = 100 °C 6 TA = 25 °C 1.7 TA = 70 °C 1 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RJA 73 °C／W Junction-to-Case RJC 8 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Coppe. 3Package limitation current is 18A. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 30 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1 1.5 2.5 G D S PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 16mΩ 24A G : GATE D : DRAIN S : SOURCE G D D#1 D D S
REV1.0 E-21-1 N-Channel Enhancement Mode Field Effect Transistor P1603BEX PDFN 2x2S Halogen-Free & Lead-Free NIKO-SEM Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V 1 VDS = 20V, VGS = 0V, TJ = 55 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 8A 16.4 25 mΩ VGS = 10V, ID = 8A 13.3 16 Forward Transconductance1 gfs VDS = 10V, ID = 8A 37 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 15V, f = 1MHz 513 pF Output Capacitance Coss 94 Reverse Transfer Capacitance Crss 66 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 2.6 Ω Total Gate Charge2 Qg(VGS=10V) VDS = 15V , ID = 8A nC Qg(VGS=4.5V) 7.2 Gate-Source Charge2 Qgs 1.2 Gate-Drain Charge2 Qgd 4 Turn-On Delay Time2 td(on) VDD = 15V ID 8A, VGEN = 10V, RG = 6Ω nS Rise Time2 tr 11 Turn-Off Delay Time2 td(off) 25 Fall Time2 tf 10 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 IS 15 A Forward Voltage1 VSD IF = 8A, VGS = 0V 0.8 1 V Reverse Recovery Time trr IF = 8A , dlF/dt = 100A / S 11.3 nS Reverse Recovery Charge Qrr 2.5 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature. 3Package limitation current is 18A.
REV1.0 E-21-1 N-Channel Enhancement Mode Field Effect Transistor P1603BEX PDFN 2x2S Halogen-Free & Lead-Free NIKO-SEM 0 3 6 9 12 15 VDS=30V ID=8A 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=8A TJ , Junction Temperature(˚C) VDS, Drain-To-Source Voltage(V) Qg , Total Gate Charge(nC) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) On-Resistance VS Temperature 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3V VGS=2.5V 25℃ 125℃ -20℃ 0 1 2 3 4 5 25℃ 150℃ 0.1 100 CISS COSS CRSS 100 200 300 400 500 600 0 5 10 15 20 25 30 VDS, Drain-To-Source Voltage(V) Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) Normalized Drain to Source ON-Resistance Capacitance Characteristic C , Capacitance(pF) Gate charge Characteristics Characteristics VGS , Gate-To-Source Voltage(V)
REV1.0 E-21-1 N-Channel Enhancement Mode Field Effect Transistor P1603BEX PDFN 2x2S Halogen-Free & Lead-Free NIKO-SEM Safe Operating Area Single Pulse Maximum Power Dissipation Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 73 ˚C/W TA=25˚C DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 73 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 73 ℃/W 3.TJ-TA = P*RthJC(t) 4.RthJA(t) = r(t)*RthJC ID , Drain Current(A) Power(W) T1 , Square Wave Pulse Duration[sec]