P1410BK NIKOSEM | Alldatasheet
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REV 1.1 G-35-1 N-Channel Enhancement Mode Field Effect Transistor P1410BK PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM G DDDD SSS#1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25 °C ID A TC = 100 °C 27 Pulsed Drain Current1 IDM 110 Continuous Drain Current TA = 25 °C ID TA = 70 °C 9.8 Avalanche Current IAS 21 Avalanche Energy L = 1mH EAS 224 mJ Power Dissipation TC = 25 °C PD W TC = 100 °C 24 Power Dissipation3 TA = 25 °C PD W TA = 70 °C 3.2 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RJA 25 °C / W Junction-to-Ambient2 Steady-State RJA 50 Junction-to-Case Steady-State RJC 2.1 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on RJA t ≦10s value. G. GATE D. DRAIN S. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 14.5mΩ 42A G D S
REV 1.1 G-35-1 N-Channel Enhancement Mode Field Effect Transistor P1410BK PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 100 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.8 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS =80V, VGS = 0V 1 VDS = 80V, VGS = 0V, TJ = 55 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 20A 11 14.5 mΩ VGS = 4.5V, ID = 15A 12 16 Forward Transconductance1 gfs VDS = 5V, ID = 20A 50 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz 4032 pF Output Capacitance Coss 276 Reverse Transfer Capacitance Crss 224 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 0.67 Ω Total Gate Charge2 Qg VGS = 10V VDS = 50V , VGS = 10V, ID = 20A 106 nC VGS = 4.5V 56 Gate-Source Charge2 Qgs 15 Gate-Drain Charge2 Qgd 39 Turn-On Delay Time2 td(on) VDS = 50V , ID 20A, VGS = 10V, RGEN =6Ω nS Rise Time2 tr 30 Turn-Off Delay Time2 td(off) 132 Fall Time2 tf 51 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 50 A Forward Voltage1 VSD IF = 20A, VGS = 0V 1.2 V Reverse Recovery Time trr IF = 20A, dlF/dt = 100A / S 40 nS Reverse Recovery Charge Qrr 53 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
REV 1.1 G-35-1 N-Channel Enhancement Mode Field Effect Transistor P1410BK PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC) 0 1 2 3 4 5 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3.6V VGS=3.5V 25℃ 125℃ -20℃ 0 1 2 3 4 5 6 0 20 40 60 80 100 120 VDS=50V ID=20A CISS COSS CRSS 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 0 5 10 15 20 25 30 0.02 0.04 0.06 0.08 0.1 2 4 6 8 10 ID=20A 0.01 0.02 0.03 0.04 0.05 0 6 12 18 24 30 VGS=10V VGS=4.5V
REV 1.1 G-35-1 N-Channel Enhancement Mode Field Effect Transistor P1410BK PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM TJ , Junction Temperature(˚C) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature Normalized Drain to Source ON-Resistance Source-Drain Diode Forward Voltage IS , Source Current(A) r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=20A 25℃ 150℃ 0.1 100 DC 100ms 10ms 1ms 0.01 0.1 100 1000 0.01 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA = 25˚C 3.RθJA = 50˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 120 150 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 50 ˚C/W TA = 25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 50 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA