P1410BD NIKOSEM | Alldatasheet
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REV 1.1 G-35-1 N-Channel Enhancement Mode Field Effect Transistor P1410BD TO-252 Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25 °C ID A TC = 100 °C 31 Pulsed Drain Current1 IDM 90 Avalanche Current IAS 20 Avalanche Energy2 L = 1mH EAS 197 mJ Power Dissipation TC = 25 °C PD 83 W TC = 100 °C 33 Junction & Storage Temperature Range TJ, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 1.5 °C / W Junction-to-Ambient RJA 62.5 1Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 100 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.8 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 80V, VGS = 0V 1 VDS=80V, VGS=0V, TJ=125 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 15A 12 16 mΩ RDS(ON) VGS = 10V, ID = 20A 11.5 14.5 mΩ 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 14.5mΩ 49A G D S
REV 1.1 G-35-1 N-Channel Enhancement Mode Field Effect Transistor P1410BD TO-252 Halogen-Free & Lead-Free NIKO-SEM Forward Transconductance1 gfs VDS = 5V, ID = 20A 47 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz 4029 pF Output Capacitance Coss 269 Reverse Transfer Capacitance Crss 219 Total Gate Charge2 Qg(VGS=10V) VDS = 50V, ID = 20A 103 nC Qg(VGS=4.5V) 55 Gate-Source Charge2 Qgs 15 Gate-Drain Charge2 Qgd 34 Turn-On Delay Time2 td(on) 27 nS Rise Time2 tr VDD = 50V 36 Turn-Off Delay Time2 td(off) ID 20A, VGS = 10V, RGS = 6Ω 145 Fall Time2 tf 63 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 69 A Forward Voltage1 VSD IF = 20A, VGS = 0V 1.2 V Reverse Recovery Time trr IF = 20A, dlF/dt = 100A / S 37 nS Reverse Recovery Charge Qrr 43 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
REV 1.1 G-35-1 N-Channel Enhancement Mode Field Effect Transistor P1410BD TO-252 Halogen-Free & Lead-Free NIKO-SEM Transfer Characteristics ID, Drain-To-Source Current(A) Output Characteristics ID, Drain-To-Source Current(A) VDS, Drain-To-Source Voltage(V) VGS, Gate-To-Source Voltage(V) VGS , Gate-To-Source Voltage(V) Gate charge Characteristics Characteristics C , Capacitance(pF) Capacitance Characteristic Qg , Total Gate Charge(nC) VDS, Drain-To-Source Voltage(V) On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=4V VGS=3.5V 25℃ 125℃ -20℃ 0 1 2 3 4 5 6 0 20 40 60 80 100 120 VDS=50V ID=20A CISS CRSS COSS 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 0 5 10 15 20 25 30 0.0105 0.011 0.0115 0.012 0.0125 0.013 0.0135 2 4 6 8 10 ID=20A 0.005 0.01 0.015 0.02 0 3 6 9 12 15 VGS=10V VGS=4.5V
REV 1.1 G-35-1 N-Channel Enhancement Mode Field Effect Transistor P1410BD TO-252 Halogen-Free & Lead-Free NIKO-SEM On-Resistance VS Temperature Source-Drain Diode Forward Voltage IS , Source Current(A) Normalized Drain to Source ON-Resistance VSD, Source-To-Drain Voltage(V) TJ , Junction Temperature(˚C) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) VDS, Drain-To-Source Voltage(V) Single Pulse Time(s) r(t) , Normalized Effective Transient Thermal Resistance Transient Thermal Response Curve T1 , Square Wave Pulse Duration[sec] 0.4 0.9 1.4 1.9 2.4 2.9 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=20A 25℃ 150℃ 0.1 100 DC 100ms 10ms 1ms 0.1 100 1000 0.1 1 10 100 1000 NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC = 1.5˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 200 400 600 800 1000 1200 1400 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 1.5˚C/W TC=25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 1.5 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC