P1406BV NIKOSEM | Alldatasheet
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N-Channel Enhancement Mode Field Effect Transistor P1406BV SOP-8 Halogen-Free & Lead-Free NIKO-SEM REV 1.0 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TA = 25 ° C ID A TA = 70 ° C 10 Pulsed Drain Current1 IDM 40 Avalanche Current IAS 39 Avalanche Energy L = 0.1mH EAS 76 mJ Power Dissipation3 TA = 25 ° C PD 4 W TA = 70 ° C 2.6 Junction & Storage Temperature Range TJ, Tstg -55 to 150 ° C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RJA 30 ° C / W Junction-to-Ambient Steady-State RJA 56 Junction-to-Case Steady-State RJC 25 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. 3The Power dissipation is based on RJA t ≦10s value. .ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 60 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.8 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 12.5mΩ 12A G: GATE D: DRAIN S: SOURCE G D S
N-Channel Enhancement Mode Field Effect Transistor P1406BV SOP-8 Halogen-Free & Lead-Free NIKO-SEM REV 1.0 Zero Gate Voltage Drain Current IDSS VDS = 48V, VGS = 0V 1 A VDS = 40V, VGS = 0V, TJ = 55 ° C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 10A 11 16 mΩ VGS =10V, ID = 10A 9.8 12.5 Forward Transconductance1 gfs VDS = 5V, ID = 10A 50 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz 1901 pF Output Capacitance Coss 239 Reverse Transfer Capacitance Crss 177 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 0.7 Ω Total Gate Charge2 Qg(VGS=10V) VDS = 30V , ID =10A nC Qg(VGS=4.5V) 27 Gate-Source Charge2 Qgs 5 Gate-Drain Charge2 Qgd 15 Turn-On Delay Time2 td(on) VDS = 30V , ID 10A, VGS = 10V, RGEN =6Ω nS Rise Time2 tr 12 Turn-Off Delay Time2 td(off) 58 Fall Time2 tf 10 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Continuous Current IS 3 A Forward Voltage1 VSD IF = 10A, VGS = 0V 1.3 V Diode Reverse Recovery Time trr IF= 10A, dI/dt=100A/μs 26 nS Diode Reverse Recovery Charge Qrr 17 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2%. 2Independent of operating temperature.
N-Channel Enhancement Mode Field Effect Transistor P1406BV SOP-8 Halogen-Free & Lead-Free NIKO-SEM REV 1.0 Transfer Characteristics ID, Drain-To-Source Current(A) Output Characteristics ID, Drain-To-Source Current(A) VDS, Drain-To-Source Voltage(V) VGS, Gate-To-Source Voltage(V) VGS , Gate-To-Source Voltage(V) Gate charge Characteristics Characteristics C , Capacitance(pF) Capacitance Characteristic Qg , Total Gate Charge(nC) VDS, Drain-To-Source Voltage(V) On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VGS=3V 0 1 2 3 4 5 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=4V VGS=3.5V 0 10 20 30 40 50 VDS=30V ID=10A 25℃ 125℃ -20℃ 0 1 2 3 4 5 CISS COSS CRSS 500 1000 1500 2000 2500 0 5 10 15 20 25 30 0.000 0.004 0.008 0.012 0.016 0.020 2 4 6 8 10 ID=10A 0.000 0.004 0.008 0.012 0.016 0.020 0 3 6 9 12 15 VGS=10V VGS=4.5V
N-Channel Enhancement Mode Field Effect Transistor P1406BV SOP-8 Halogen-Free & Lead-Free NIKO-SEM REV 1.0 On-Resistance VS Temperature Source-Drain Diode Forward Voltage IS , Source Current(A) Normalized Drain to Source ON-Resistance VSD, Source-To-Drain Voltage(V) TJ , Junction Temperature(˚C) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) VDS, Drain-To-Source Voltage(V) Single Pulse Time(s) r(t) , Normalized Effective Transient Thermal Resistance Transient Thermal Response Curve T1 , Square Wave Pulse Duration[sec] 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=10A 25℃ 150℃ 0.1 100 DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 56˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 56˚C/W TA=25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 56 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA