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REV 1.0 H-7-3 N-Channel Enhancement Mode Field Effect Transistor P1210BDA TO-252 Halogen-Free & Lead-Free NIKO-SEM PRODUCT SUMMARY V(BR)DSS R DS(ON) I D 100V 12mΩ 49A ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ±20 V Continuous Drain Current TC = 25 °C ID A TC = 100 °C 31 Pulsed Drain Current1 I DM 150 Avalanche Current I AS 15 Avalanche Energy2 L = 1mH E AS 112 mJ Power Dissipation TC = 25 °C PD 62.5 W TC = 100 °C 25 Junction & Storage Temperature Range T J, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 2 °C / W Junction-to-Ambient RJA 62.5 1Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (T J = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250A 100 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A 1.4 1.8 2.4 Gate-Body Leakage I GSS V DS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current I DSS VDS = 80V, VGS = 0V 1 VDS=80V, VGS=0V, TJ=125 °C 10 Drain-Source On-State Resistance1 RDS(ON) V GS = 4.5V, ID = 10A 11 15 mΩ RDS(ON) V GS = 10V, ID = 12A 9.3 12 mΩ 1. GATE 2. DRAIN 3. SOURCE G D S
REV 1.0 H-7-3 N-Channel Enhancement Mode Field Effect Transistor P1210BDA TO-252 Halogen-Free & Lead-Free NIKO-SEM Forward Transconductance1 g fs V DS = 5V, ID = 12A 62 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 50V, f = 1MHz 2025 pF Output Capacitance C oss 186 Reverse Transfer Capacitance C rss 10 Total Gate Charge2 Qg(VGS=10V) VDS = 50V, ID = 12A 31.6 nC Qg(VGS=4.5V) 16 Gate-Source Charge2 Q gs 5.2 Gate-Drain Charge2 Q gd 5.5 Turn-On Delay Time2 t d(on) 12 nS Rise Time2 t r V DD = 50V 10 Turn-Off Delay Time2 t d(off) ID 12A, VGS = 10V, RGS = 6Ω 33 Fall Time2 t f 11 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current I S 49 A Forward Voltage1 V SD I F = 12A, VGS = 0V 1.2 V Reverse Recovery Time t rr IF = 12A, dlF/dt = 100A / S 55 nS Reverse Recovery Charge Q rr 62 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
REV 1.0 H-7-3 N-Channel Enhancement Mode Field Effect Transistor P1210BDA TO-252 Halogen-Free & Lead-Free NIKO-SEM
0123456 VGS=10V
VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=2.7V VGS=2.5V 0 7 14 21 28 35 VDS=50V ID=12A CISS COSS CRSS 500 1000 1500 2000 2500 0 1 02 03 04 05 0 0.01 0.02 0.03 0.04 0.05 2468 1 0 ID=12A 0.01 0.02 0.03 0.04 0.05 0 6 12 18 24 30 VGS=10V VGS=4.5V 25℃ 125℃ -20℃ 012345 Capacitance Characteristic Transfer Characteristics ID, Drain-To-Source Current(A) Output Characteristics ID, Drain-To-Source Current(A) VDS, Drain-To-Source Voltage(V) VGS, Gate-To-Source Voltage(V) VGS , Gate-To-Source Voltage(V) Gate charge Characteristics C , Capacitance(pF) Qg , Total Gate Charge(nC) V DS, Drain-To-Source Voltage(V) On-Resistance VS Gate-To-Source RDS(ON)ON-Resistance(OHM) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A)VGS, Gate-To-Source Voltage(V)
REV 1.0 H-7-3 N-Channel Enhancement Mode Field Effect Transistor P1210BDA TO-252 Halogen-Free & Lead-Free NIKO-SEM 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=12A single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 2 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC DC 100ms 10ms 1ms 0.1 100 1000 0.1 1 10 100 1000 NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC = 2 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 200 400 600 800 1000 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 2˚C/W TC=25˚C 25℃ 150℃ 0.1 100 r(t) , Normalized Effective Transient Thermal Resistancec Transient Thermal Response Curve T1 , Square Wave Pulse Duration[sec] On-Resistance VS Temperature Source-Drain Diode Forward Voltage IS , Source Current(A) Normalized Drain to Source ON-Resistance VSD, Source-To-Drain Voltage(V) TJ , Junction Temperature(˚C) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) VDS, Drain-To-Source Voltage(V) Single Pulse Time(s)