P1160JD NIKOSEM | Alldatasheet

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REV 1.0 M-17-3 N-Channel Enhancement Mode Field Effect Transistor P1160JD TO-252 Halogen-Free & Lead-Free NIKO-SEM G D S ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V Continuous Drain Current2 TC = 25 ° C ID A TC = 100 ° C 7 Pulsed Drain Current1 IDM 33 Avalanche Current 3 IAS 1.4 Avalanche Energy3 EAS 69 mJ Power Dissipation TC = 25 ° C PD W TC = 100 ° C 30 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 ° C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 1.65 ° C / W Junction-to-Ambient RJA 62.5 1Pulse width limited by maximum junction temperature. 2Ensure that the channel temperature does not exceed 150°C. 3VDD = 50V , L = 75mH ,starting TJ = 25°C. 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 418mΩ 11A

REV 1.0 M-17-3 N-Channel Enhancement Mode Field Effect Transistor P1160JD TO-252 Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 600 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2 3.3 4 Gate-Body Leakage IGSS VDS = 0V, VGS = ±30V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 600V, VGS = 0V 1 VDS = 480V, VGS = 0V, TJ = 100 ° C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 5.5A 356 418 mΩ Forward Transconductance1 gfs VDS = 15V, ID = 5.5A 9.1 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 100V, f = 250KHz 722 pF Output Capacitance Coss 38 Reverse Transfer Capacitance Crss 5.5 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 21 Ω Total Gate Charge2 Qg VDS =480V, VGS = 10V, ID = 5.5A nC Gate-Source Charge2 Qgs 4.6 Gate-Drain Charge2 Qgd 10 Turn-On Delay Time2 td(on) VDD = 300V, ID  5.5A, VGS = 10V, RGEN =25Ω nS Rise Time2 tr 41 Turn-Off Delay Time2 td(off) 118 Fall Time2 tf 49 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 8.7 A Forward Voltage1 VSD IF = 11A , VGS = 0V 1.2 V Reverse Recovery Time trr IF = 5.5A , dIF/dt= 100A/μs 245 nS Reverse Recovery Charge Qrr 2.4 uC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature.

REV 1.0 M-17-3 N-Channel Enhancement Mode Field Effect Transistor P1160JD TO-252 Halogen-Free & Lead-Free NIKO-SEM Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5.5V VGS=5V 0.2 0.4 0.6 0.8 0 2 4 6 8 10 VGS=10V 0.2 0.4 0.6 0.8 2 4 6 8 10 ID=5.5A 25℃ 0 2 4 6 8 10 -20℃ 125℃ 0.0 0.6 1.2 1.8 2.4 3.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=5.5A CISS COSS CRSS 100 1000 10000 0 100 200 300 400 500 600

REV 1.0 M-17-3 N-Channel Enhancement Mode Field Effect Transistor P1160JD TO-252 Halogen-Free & Lead-Free NIKO-SEM Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(S) 0 5 10 15 20 25 VDS=480V ID=5.5A 0.1 100 25℃ 150℃ 200 400 600 800 1000 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 1.65 ˚C/W TC = 25˚C DC 100ms 10ms 1ms 0.01 0.1 100 1 10 100 1000 NOTE : 1.VGS = 10V 2.TC =25˚C 3.RθJC = 1.65 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 1.65 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC