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REV 1.0 F-49-1 N-Channel Enhancement Mode Field Effect Transistor P1060ETF:TO-220F P1060ETFS:TO-220FS Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS 600 V Gate-Source Voltage V GS ±30 V Continuous Drain Current2 TC = 25 °C ID A TC = 100 °C 6 Pulsed Drain Current1 , 2 I DM 30 Avalanche Current 3 I AS 3.5 Avalanche Energy3 E AS 61 mJ Power Dissipation T C = 25 °C PD W TC = 100 °C 15 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 3.2 °C / W Junction-to-Ambient RJA 62.5 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed 3VDD = 100V , L = 10mH, starting TJ = 25˚C ELECTRICAL CHARACTERISTICS (T J = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250A 600 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A 2 2.9 4 Gate-Body Leakage I GSS V DS = 0V, VGS = ±30V ±100 nA 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V(BR)DSS R DS(ON) I D 600V 0.75Ω 10A G D S 231 100% UIS tested
REV 1.0 F-49-1 N-Channel Enhancement Mode Field Effect Transistor P1060ETF:TO-220F P1060ETFS:TO-220FS Halogen-Free & Lead-Free NIKO-SEM Gate Voltage Drain Current I DSS VDS = 600V, VGS = 0V , TC = 25 °C 1 VDS = 480V, VGS = 0V , TC = 100 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 5A 0.57 0.75 Ω Forward Transconductance1 g fs V DS = 15V, ID = 5A 15 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 25V, f = 1MHz 1552 pFOutput Capacitance C oss 162 Reverse Transfer Capacitance C rss 23 Total Gate Charge2 Q g VDD = 480V, ID = 10A, VGS = 10V nCGate-Source Charge2 Q gs 7 Gate-Drain Charge2 Q gd 20 Turn-On Delay Time2 t d(on) VDD = 300V, ID = 10A, RG= 25Ω nS Rise Time2 t r 34 Turn-Off Delay Time2 t d(off) 220 Fall Time2 t f 47 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 I S 10 A Forward Voltage1 V SD I F =10A, VGS = 0V 1.5 V Reverse Recovery Time t rr IF = 10A, dlF/dt = 100A / S 404 nS Reverse Recovery Charge Q rr 4.7 uC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature.
REV 1.0 F-49-1 N-Channel Enhancement Mode Field Effect Transistor P1060ETF:TO-220F P1060ETFS:TO-220FS Halogen-Free & Lead-Free NIKO-SEM 125℃ 02468 1 0 On-Resistance VS Gate-To-Source RDS(ON)ON-Resistance(OHM) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A)VGS, Gate-To-Source Voltage(V) Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC) 25℃ CRSS0 500 1000 1500 2000 2500 3000 3500 0 5 10 15 20 25 CISS COSS 0 1 02 03 04 05 0 VDS=480V ID=5A 02468 1 0 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V 0.2 0.3 0.4 0.5 0.6 0.7 0.8 02468 1 0 VGS=10V 0.2 0.3 0.4 0.5 0.6 0.7 0.8 2468 1 0 ID=5A
REV 1.0 F-49-1 N-Channel Enhancement Mode Field Effect Transistor P1060ETF:TO-220F P1060ETFS:TO-220FS Halogen-Free & Lead-Free NIKO-SEM On-Resistance VS Temperature Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] VSD, Source-To-Drain Voltage(V) 0.2 0.7 1.2 1.7 2.2 2.7 3.2 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=5A 25℃ 150℃ 0.1 100 100 200 300 400 500 600 700 800 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 3.2˚C/W TC=25˚C DC 100ms 10ms 1ms 0.01 0.1 100 1 10 100 1000 NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC = 3.2˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 3.2 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC