P1050ETF NIKOSEM | Alldatasheet
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REV 1.0 I-28-4 N-Channel Enhancement Mode Field Effect Transistor P1050ETF TO-220F Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ±30 V Continuous Drain Current2,4 TC = 25 °C ID A TC = 100 °C 6.3 Pulsed Drain Current1 , 2 IDM 30 Avalanche Current3 IAS 5.9 A Avalanche Energy3 EAS 174 mJ Power Dissipation TC = 25 °C PD W TC = 100 °C 19 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJc 2.6 °C / W Junction-to-Ambient RJA 62.5 °C / W 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3VDD = 50V , L = 10mH, starting TJ = 25˚C. 4This characteristics assumes the die are assembled in TO-220 packages. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 500 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2 3 4 Gate-Body Leakage IGSS VDS = 0V, VGS = ±30V ±100 nA 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 500V 705mΩ 10A G D S 2 31 100% UIS tested
REV 1.0 I-28-4 N-Channel Enhancement Mode Field Effect Transistor P1050ETF TO-220F Halogen-Free & Lead-Free NIKO-SEM Gate Voltage Drain Current IDSS VDS = 500V, VGS = 0V , TC = 25 °C 1 VDS = 400V, VGS = 0V , TC = 100 °C 100 Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 5A 513 705 mΩ Forward Transconductance1 gfs VDS = 10V, ID = 5A 13 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz 1110 pF Output Capacitance Coss 130 Reverse Transfer Capacitance Crss 15.6 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 2.3 Ω Total Gate Charge2 Qg VDD = 400V, ID = 10A, VGS = 10V nC Gate-Source Charge2 Qgs 5 Gate-Drain Charge2 Qgd 11 Turn-On Delay Time2 td(on) VDD = 250V, ID = 10A, RG= 25Ω nS Rise Time2 tr 44 Turn-Off Delay Time2 td(off) 123 Fall Time2 tf 61 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 IS 10 A Forward Voltage1 VSD IF =10A, VGS = 0V 1 V Reverse Recovery Time trr IF = 10A, dlF/dt = 100A / S 382 nS Reverse Recovery Charge Qrr 3.3 uC 1Pulse test : Pulse Width 380 sec, Duty Cycle 2％. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature.
REV 1.0 I-28-4 N-Channel Enhancement Mode Field Effect Transistor P1050ETF TO-220F Halogen-Free & Lead-Free NIKO-SEM Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) 25℃ 125℃ -20℃ 0 1 2 3 4 5 6 7 0 2 4 6 8 10 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=4V VGS=4.3V 0.2 0.4 0.6 0.8 0 2 4 6 8 10 VGS=10V 0.3 0.6 0.9 1.2 1.5 2 4 6 8 10 ID=5A CISS COSS CRSS 500 1000 1500 2000 2500 0 5 10 15 20 25 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=5A
REV 1.0 I-28-4 N-Channel Enhancement Mode Field Effect Transistor P1050ETF TO-220F Halogen-Free & Lead-Free NIKO-SEM Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(sec) 0 7 14 21 28 35 VDS=400V ID=10A 25℃ 150℃ 0.1 100 200 400 600 800 1000 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 2.6 ˚C/W TC = 25˚C DC 100ms 10ms 1ms 0.01 0.1 100 10 100 1000 NOTE : 1.VGS = 10V 2.TC =25˚C 3.RθJC = 2.6 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 2.6 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC