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REV 1.0 H - 4 - 1 N-Channel Enhancement Mode Field Effect Transistor P1025HTFB TO-220F Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS 250 V Gate-Source Voltage V GS ±20 V Continuous Drain Current TC = 25 °C ID A TC = 100 °C 6.3 Pulsed Drain Current1 I DM 20 Avalanche Current I AS 6 Avalanche Energy L = 1mH E AS 18 mJ Power Dissipation TC = 25 °C PD W TC = 100 °C 12.8 Operating Junction & Storage Temperature Range T j, Tstg -55 to 150 °C THERMAL RESISTANCE RATING THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 3.9 °C / W Junction-to-Ambient RJA 62.5 1Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250A 250 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A 1 2 3 Gate-Body Leakage I GSS V DS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current I DSS VDS = 250V, VGS = 0V 1 VDS = 200V, VGS = 0V, TJ = 125 °C 10 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V(BR)DSS R DS(ON) I D 250V 450mΩ 10A G D S 231

REV 1.0 H - 4 - 1 N-Channel Enhancement Mode Field Effect Transistor P1025HTFB TO-220F Halogen-Free & Lead-Free NIKO-SEM Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 5A 340 450 mΩ VGS = 4.5V, ID = 5A 452 580 Forward Transconductance1 g fs V DS = 5V, ID = 5A 6.2 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 25V, f = 1MHz 373 pFOutput Capacitance C oss 65 Reverse Transfer Capacitance C rss 12 Total Gate Charge2 Q g VDS =200V, VGS = 10V, ID = 10A nCGate-Source Charge2 Q gs 1.5 Gate-Drain Charge2 Q gd 5.6 Turn-On Delay Time2 t d(on) 10 nS Rise Time2 t r V DD = 125V, 18 Turn-Off Delay Time2 t d(off) ID  10A, VGS = 10V, RGEN = 6Ω 29 Fall Time2 t f 22 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 I S 15 A Forward Voltage1 V SD I F = 10A, VGS = 0V 1 V Reverse Recovery Time t rr IF = 10A, dlF/dt = 100A / S 143 nS Reverse Recovery Charge Q rr 554 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature.

REV 1.0 H - 4 - 1 N-Channel Enhancement Mode Field Effect Transistor P1025HTFB TO-220F Halogen-Free & Lead-Free NIKO-SEM 25℃ 125℃ -20℃ 01234567 0369 1 2 1 5 VDS=200V ID=10A CISS COSS CRSS 100 200 300 400 500 600 700 0 5 10 15 20 25 30 02468 1 0 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=4.5V VGS=4.2V VGS=5V 0.2 0.4 0.6 0.8 0369 1 2 VGS=10V VGS=4.5V 0.2 0.4 0.6 0.8 2468 1 0 ID=5A On-Resistance VS Gate-To-Source RDS(ON)ON-Resistance(OHM) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A)VGS, Gate-To-Source Voltage(V) Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC)

REV 1.0 H - 4 - 1 N-Channel Enhancement Mode Field Effect Transistor P1025HTFB TO-220F Halogen-Free & Lead-Free NIKO-SEM DC 100ms 10ms 1ms 0.1 100 1 10 100 1000 NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC = 3.9˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 25℃ 150℃ 0.1 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=5A 120 160 200 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 3.9 ˚C/W TC=25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 3.9 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC On-Resistance VS Temperature Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] VSD, Source-To-Drain Voltage(V)