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N-Channel Enhancement Mode Field Effect Transistor P1025HDB TO-252 Halogen-Free & Lead-Free NIKO-SEM REV 1.0 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS 250 V Gate-Source Voltage V GS ±20 V Continuous Drain Current2 TC = 25 ° C ID A TC = 100 ° C 6.3 Pulsed Drain Current1 I DM 26 Avalanche Current I AS 5.3 Avalanche Energy L = 1mH E AS 14 mJ Power Dissipation TC = 25 ° C PD 52 W TC = 100 ° C 20 Junction & Storage Temperature Range T J, Tstg -55 to 150 ° C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient RJA 62.5 ° C / W Junction-to-Case RJC 2.4 1Pulse width limited by maximum junction temperature. 2This characteristics assumes the die are assembled in TO-220 packages. ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250A 250 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A 1 2 3 Gate-Body Leakage I GSS V DS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current I DSS VDS = 250V, VGS = 0V 1 A VDS = 200V, VGS = 0V, TJ = 125 ° C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 5A 491 590 mΩVGS =10V, ID = 5A 381 460 PRODUCT SUMMARY V(BR)DSS R DS(ON) I D 250V 460mΩ 10A 1: GATE 2: DRAIN 3: SOURCE G D S
N-Channel Enhancement Mode Field Effect Transistor P1025HDB TO-252 Halogen-Free & Lead-Free NIKO-SEM REV 1.0 Forward Transconductance1 g fs V DS = 10V, ID = 5A 7 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 25V, f = 1MHz 372 pF Output Capacitance C oss 64 Reverse Transfer Capacitance C rss 10.9 Total Gate Charge2 Q g VGS = 10V , VDS = 200V I D =10A nC Gate-Source Charge2 Q gs 1.7 Gate-Drain Charge2 Q gd 6.1 Turn-On Delay Time2 t d(on) VDS = 125V , ID 10A, VGS = 10V, RGEN =6Ω nS Rise Time2 t r 18 Turn-Off Delay Time2 t d(off) 29 Fall Time2 t f 22 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Continuous Current I S 10 A Forward Voltage1 V SD I F = 10A, VGS = 0V 1 V Diode Reverse Recovery Time t rr IF= 10A, dI/dt=100A/μs 134 nS Diode Reverse Recovery Charge Q rr 511 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2%. 2Independent of operating temperature.
N-Channel Enhancement Mode Field Effect Transistor P1025HDB TO-252 Halogen-Free & Lead-Free NIKO-SEM REV 1.0 0369 1 2 1 5 VDS=200V ID=10A CISS COSS CRSS 100 200 300 400 500 600 700 0 5 10 15 20 25 30 25℃ 125℃ -20℃ 01234567 0.3 0.6 0.9 1.2 2468 1 0 ID=5A 0.2 0.4 0.6 0.8 0369 1 2 1 5 VGS=10V VGS=4.5V 02468 1 0 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3.5V VGS=4V On-Resistance VS Gate-To-Source RDS(ON)ON-Resistance(OHM) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A)VGS, Gate-To-Source Voltage(V) Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC)
N-Channel Enhancement Mode Field Effect Transistor P1025HDB TO-252 Halogen-Free & Lead-Free NIKO-SEM REV 1.0 single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 2.4 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC DC 100ms 10ms 1ms 0.1 100 1 10 100 1000 NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC = 2.4˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 100 200 300 400 500 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 2.4˚C/W TC=25˚C 25℃ 150℃ 0.1 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=5A Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature Source-Drain Diode Forward Voltage r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec]