DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

N-Channel Enhancement Mode Field Effect Transistor P1020HDB TO-252 Halogen-Free & Lead-Free NIKO-SEM REV 1.0 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ±20 V Continuous Drain Current TC = 25 ° C ID A TC = 100 ° C 6.3 Pulsed Drain Current1 I DM 26 Avalanche Current I AS 6.5 Avalanche Energy L = 1mH E AS 21.1 mJ Power Dissipation TC = 25 ° C PD 52 W TC = 100 ° C 20 Junction & Storage Temperature Range T J, Tstg -55 to 150 ° C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient RJA 62.5 ° C / W Junction-to-Case RJC 2.4 1Pulse width limited by maximum junction temperature. .ELECTRICAL CHARACTERISTICS (T J = 25 ° C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250A 200 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A 1 2 3 Gate-Body Leakage I GSS V DS = 0V, VGS = ±20V ±100 nA PRODUCT SUMMARY V(BR)DSS R DS(ON) I D 200V 325mΩ 10A 1: GATE 2: DRAIN 3: SOURCE G D S

N-Channel Enhancement Mode Field Effect Transistor P1020HDB TO-252 Halogen-Free & Lead-Free NIKO-SEM REV 1.0 Zero Gate Voltage Drain Current I DSS VDS = 200V, VGS = 0V 1 A VDS = 160V, VGS = 0V, TJ = 125 ° C 10 Drain-Source On-State Resistance1 RDS(ON) VGS =10V, ID = 5A 261 325 mΩVGS =4.5V, ID = 5A 364 440 Forward Transconductance1 g fs V DS = 10V, ID = 5A 6 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 25V, f = 1MHz 372 pFOutput Capacitance C oss 69 Reverse Transfer Capacitance C rss 11 Total Gate Charge2 Q g VDS = 160V , ID =10A , VGS = 10V 12.7 nCGate-Source Charge2 Q gs 1.7 Gate-Drain Charge2 Q gd 5.5 Turn-On Delay Time2 t d(on) VDS = 100V , ID  10A, VGS = 10V, RGEN = 6Ω nS Rise Time2 t r 30 Turn-Off Delay Time2 t d(off) 24 Fall Time2 t f 35 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Continuous Current3 I S 10 A Forward Voltage1 V SD I F = 10A, VGS = 0V 1 V Diode Reverse Recovery Time t rr IF= 10A, dI/dt=100A/μs 103 nS Diode Reverse Recovery Charge Q rr 377 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2%. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature.

N-Channel Enhancement Mode Field Effect Transistor P1020HDB TO-252 Halogen-Free & Lead-Free NIKO-SEM REV 1.0 0.2 0.4 0.6 0.8 2468 1 0 ID=5A 0.2 0.4 0.6 0.8 0369 1 2 VGS=10VVGS=4.5V 0123456 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=4.2V Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) 25℃ 125℃ -20℃ 01234567 CISS COSS CRSS 100 200 300 400 500 600 700 0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=5A

N-Channel Enhancement Mode Field Effect Transistor P1020HDB TO-252 Halogen-Free & Lead-Free NIKO-SEM REV 1.0 DC 100ms 10ms 1ms 0.1 100 1 10 100 1000 NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC = 2.4˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) Gate charge Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area Single Pu lse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] 0 3 6 9 12 15 VDS=160V ID=10A 100 200 300 400 500 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 2.4 ˚C/W TC=25˚C 25℃ 150℃ 0.1 100 single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 2.4 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC