P1010AT NIKOSEM | Alldatasheet
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REV 1.1 G-32-3 N-Channel Enhancement Mode Field Effect Transistor P1010AT TO-220 Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±25 V Continuous Drain Current TC = 25 ° C ID A TC = 100 ° C 49 Pulsed Drain Current1 IDM 200 Avalanche Current IAS 23 Avalanche Energy L = 1mH EAS 264 mJ Power Dissipation TC = 25 ° C PD 115 W TC = 100 ° C 58 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 175 ° C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 1.3 ° C / W Junction-to-Ambient RJA 50 1Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 100 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2.5 3.5 4.5 Gate-Body Leakage IGSS VDS = 0V, VGS = ±25V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 80V, VGS = 0V 1 VDS = 80V, VGS = 0V, TJ = 125 ° C 10 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 10.5mΩ 69A G D S
REV 1.1 G-32-3 N-Channel Enhancement Mode Field Effect Transistor P1010AT TO-220 Halogen-Free & Lead-Free NIKO-SEM Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 20A 8.2 10.5 mΩ VGS = 7V, ID = 20A 9.9 13.5 Forward Transconductance1 gfs VDS = 5V, ID = 20A 57 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz 4863 pF Output Capacitance Coss 375 Reverse Transfer Capacitance Crss 297 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 0.8 Ω Total Gate Charge2 Qg VGS = 10V VDS =50V,ID = 20A 101 nC VGS = 7V 76 Gate-Source Charge2 Qgs 28 Gate-Drain Charge2 Qgd 39 Turn-On Delay Time2 td(on) VDD = 50V, ID 20A, VGS = 10V, RGEN =6Ω nS Rise Time2 tr 99 Turn-Off Delay Time2 td(off) 93 Fall Time2 tf 64 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 IS 63 A Forward Voltage1 VSD IF = 20A , VGS = 0V 1.2 V Reverse Recovery Time trr IF = 20A , dIF/dt= 100A/μs 46 nS Reverse Recovery Charge Qrr 69 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
REV 1.1 G-32-3 N-Channel Enhancement Mode Field Effect Transistor P1010AT TO-220 Halogen-Free & Lead-Free NIKO-SEM 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=20A CISS COSS CRSS 1000 2000 3000 4000 5000 6000 0 5 10 15 20 25 30 0.02 0.04 0.06 0.08 0.1 2 4 6 8 10 ID=20A 0.006 0.012 0.018 0.024 0.03 0 6 12 18 24 30 VGS=10V VGS=7V 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=8V VGS=7V VGS=5.7V VGS=5.5V VGS=6V 25℃ 125℃ -20℃ 0 1 2 3 4 5 6 7 Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A)
REV 1.1 G-32-3 N-Channel Enhancement Mode Field Effect Transistor P1010AT TO-220 Halogen-Free & Lead-Free NIKO-SEM single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 1.3 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC 25℃ 150℃ 0.1 100 0 22 44 66 88 110 VDS=50V ID=20A Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] DC 100ms 10ms 1ms 0.1 100 1000 0.1 1 10 100 1000 NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC = 1.3˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 200 400 600 800 1000 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 1.3˚C/W TC=25˚C