P1006BTF NIKOSEM | Alldatasheet
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N-Channel Enhancement Mode Field Effect Transistor P1006BTF TO-220F Halogen-Free & Lead-Free NIKO-SEM REV 1.0 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25 ° C ID A TC = 100 ° C 29 Pulsed Drain Current1 IDM 150 Avalanche Current IAS 38 Avalanche Energy L = 0.1mH EAS 72.7 mJ Power Dissipation TC = 25 ° C PD 48 W TC = 100 ° C 19 Junction & Storage Temperature Range TJ, Tstg -55 to 150 ° C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient RJA 62.5 ° C / W Junction-to-Case RJC 2.6 1Pulse width limited by maximum junction temperature. .ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 60 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.8 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 48V, VGS = 0V 1 A VDS = 40V, VGS = 0V, TJ = 125 ° C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 20A 8.2 13 mΩ VGS =10V, ID = 20A 7 10 PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 10mΩ 47A 1: GATE 2: DRAIN 3: SOURCE G D S 2 31
N-Channel Enhancement Mode Field Effect Transistor P1006BTF TO-220F Halogen-Free & Lead-Free NIKO-SEM REV 1.0 Forward Transconductance1 gfs VDS = 10V, ID = 20A 60 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz 1836 pF Output Capacitance Coss 224 Reverse Transfer Capacitance Crss 136 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 0.7 Ω Total Gate Charge2 Qg(VGS=10V) VDS = 30V , ID =20A nC Qg(VGS=4.5V) 22 Gate-Source Charge2 Qgs 5.5 Gate-Drain Charge2 Qgd 11.6 Turn-On Delay Time2 td(on) VDS = 30V , ID 20A, VGS = 10V, RGEN =6Ω nS Rise Time2 tr 32 Turn-Off Delay Time2 td(off) 52 Fall Time2 tf 34 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Continuous Current IS 47 A Forward Voltage1 VSD IF = 20A, VGS = 0V 1.3 V Diode Reverse Recovery Time trr IF= 20A, dI/dt=100A/μs 34 nS Diode Reverse Recovery Charge Qrr 36 uC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2%. 2Independent of operating temperature.
N-Channel Enhancement Mode Field Effect Transistor P1006BTF TO-220F Halogen-Free & Lead-Free NIKO-SEM REV 1.0 TJ , Junction Temperature(˚C) Capacitance Characteristic VDS, Drain-To-Source Voltage(V) Qg , Total Gate Charge(nC) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature 0 1 2 3 4 5 VDS, Drain-To-Source Voltage(V) Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) Normalized Drain to Source ON-Resistance C , Capacitance(pF) Gate charge Characteristics Characteristics VGS , Gate-To-Source Voltage(V) IS , Source Current(A) 25℃ 125℃ -20℃ CISS COSS CRSS 500 1000 1500 2000 2500 0 5 10 15 20 25 30 0 8 16 24 32 40 VDS=30V ID=20A 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=20A 0 1 2 3 4 5 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3.5V VGS=3V 25℃ 150℃ 0.1 100
N-Channel Enhancement Mode Field Effect Transistor P1006BTF TO-220F Halogen-Free & Lead-Free NIKO-SEM REV 1.0 Safe Operating Area Single Pulse Maximum Power Dissipation Transient Thermal Response Curve ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] 100 150 200 250 300 350 400 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 2.6˚C/W TC=25˚C DC 100ms 10ms 1ms 0.1 100 1000 1 10 100 NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC = 2.6˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 2.6 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC