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N-Channel Enhancement Mode Field Effect Transisto r NIKO-SEM REV 1.0 P0860ETF:TO-220F P0860ETFS:TO-220FS Halogen-Free & Lead-Free ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS 600 V Gate-Source Voltage V GS ±30 V Continuous Drain Current2 TC = 25 °C ID A TC = 100 °C 5 Pulsed Drain Current1 I DM 25 Avalanche Current 3 I AS 3.5 Avalanche Energy3 E AS 61.2 mJ Power Dissipation T C = 25 °C PD W TC = 100 °C 14 Operating Junction & Storage Temperature Range T j, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 3.4 °C / W Junction-to-Ambient RJA 62.5 °C / W 1Pulse width limited by maximum junction temperature. 2Ensure that the channel temperature does not exceed 150°C. 3VDD = 50V , L = 10mH ,starting TJ = 25°C. ELECTRICAL CHARACTERISTICS (T J = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250A 600 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A 2 2.7 4 Gate-Body Leakage I GSS V DS = 0V, VGS = ±30V ±100 nA PRODUCT SUMMARY V(BR)DSS R DS(ON) I D 600V 1.05Ω 8A G D S 231 1. GATE 2. DRAIN 3. SOURCE
N-Channel Enhancement Mode Field Effect Transisto r NIKO-SEM REV 1.0 P0860ETF:TO-220F P0860ETFS:TO-220FS Halogen-Free & Lead-Free Gate Voltage Drain Current I DSS VDS = 600V, VGS = 0V , TC = 25 °C 1 VDS = 480V, VGS = 0V , TC = 100 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 4A 0.83 1.05 Ω Forward Transconductance1 g fs V DS = 10V, ID = 4A 10.5 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 25V, f = 1MHz 1270 pFOutput Capacitance C oss 114 Reverse Transfer Capacitance C rss 10 Total Gate Charge2 Q g VDD = 480V, ID = 8A, VGS = 10V nCGate-Source Charge2 Q gs 5.1 Gate-Drain Charge2 Q gd 8.4 Turn-On Delay Time2 t d(on) VDD = 300V, ID = 8A, RG= 25Ω nS Rise Time2 t r 31 Turn-Off Delay Time2 t d(off) 115 Fall Time2 t f 50 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 I S 8 A Forward Voltage1 V SD I F = 8A, VGS = 0V 1 V Reverse Recovery Time t rr IF = 8A, dlF/dt = 100A / S 390 nS Reverse Recovery Charge Q rr 3.9 uC 1Pulse test : Pulse Width 380 sec, Duty Cycle 2％. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature.
N-Channel Enhancement Mode Field Effect Transisto r NIKO-SEM REV 1.0 P0860ETF:TO-220F P0860ETFS:TO-220FS Halogen-Free & Lead-Free 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=4A CISS COSS CRSS0 200 400 600 800 1000 1200 1400 1600 1800 2000 0 5 10 15 20 25 30 25℃ 125℃ -20℃ 01234567 2468 1 0 ID=4A 0369 1 2 1 5 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=4.2V VGS=4.5V 0.4 0.8 1.2 1.6 02468 1 0 VGS=10V Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A)
N-Channel Enhancement Mode Field Effect Transisto r NIKO-SEM REV 1.0 P0860ETF:TO-220F P0860ETFS:TO-220FS Halogen-Free & Lead-Free single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 3.4 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC DC 100ms 10ms 1ms 0.01 0.1 100 10 100 1000 NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC = 3.4˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 100 200 300 400 500 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 3.4˚C/W TC=25˚C 25℃150℃ 0.1 100 0 6 12 18 24 30 VDS=480V ID=8A Gate charge Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area Single Pu lse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec]