P0810BKA NIKOSEM | Alldatasheet
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REV1.0 H-24-1 N-Channel Enhancement Mode Field Effect Transistor P0810BKA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM G DDDD SSS#1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25 °C ID A TC = 100 °C 35 Pulsed Drain Current1 IDM 110 Continuous Drain Current TA = 25 °C ID TA = 70 °C 11 Avalanche Current IAS 20 Avalanche Energy L = 1mH EAS 200 mJ Power Dissipation TC = 25 °C PD W TC = 100 °C 21 Power Dissipation3 TA = 25 °C PD 3.5 W TA = 70 °C 2.2 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RJA 35 °C / W Junction-to-Ambient2 Steady-State RJA 52 Junction-to-Case Steady-State RJC 2.3 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on RJA t ≦10s value. G. GATE D. DRAIN S. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 8.3mΩ 55A G D S
REV1.0 H-24-1 N-Channel Enhancement Mode Field Effect Transistor P0810BKA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 100 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.4 1.8 2.4 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS =80V, VGS = 0V 1 VDS = 80V, VGS = 0V, TJ = 55 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 14A 6.4 8.3 mΩ VGS = 4.5V, ID = 10A 7.4 9.6 Forward Transconductance1 gfs VDS = 5V, ID = 14A 54 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 50V, f = 1MHz 3315 pF Output Capacitance Coss 283 Reverse Transfer Capacitance Crss 11 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.4 Ω Total Gate Charge2 Qg VGS = 10V VDS = 50V , VGS = 10V, ID = 14A nC VGS = 4.5V 26 Gate-Source Charge2 Qgs 8.6 Gate-Drain Charge2 Qgd 10 Turn-On Delay Time2 td(on) VDS = 50V , ID 14A, VGS = 10V, RGEN =6Ω nS Rise Time2 tr 29 Turn-Off Delay Time2 td(off) 81 Fall Time2 tf 79 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 41 A Forward Voltage1 VSD IF = 14A, VGS = 0V 1.2 V Reverse Recovery Time trr IF = 14A, dlF/dt = 100A / S 63 nS Reverse Recovery Charge Qrr 80 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
REV1.0 H-24-1 N-Channel Enhancement Mode Field Effect Transistor P0810BKA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM 0.01 0.02 0.03 0.04 0.05 2 4 6 8 10 ID=14A Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=4V VGS=4.5V VGS=2.8V VGS=2.6V VGS=2.9V 0.004 0.008 0.012 0.016 0.02 0 6 12 18 24 30 VGS=10V VGS=4.5V 25℃ 125℃ -20℃ 0 1 2 3 4 5 CISS COSS CRSS 800 1600 2400 3200 4000 0 10 20 30 40 50 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=14A
REV1.0 H-24-1 N-Channel Enhancement Mode Field Effect Transistor P0810BKA PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM 120 150 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 52 ˚C/W TA=25˚C Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(S) 0 12 24 36 48 60 VDS=50V ID=14A 25℃ 150℃ 0.1 100 DC 100ms 10ms 1ms 0.01 0.1 100 1000 0.1 1 10 100 1000 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 52˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 52 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA