P0810BDA NIKOSEM | Alldatasheet
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REV 1.0 H-24-1 N-Channel Enhancement Mode Field Effect Transistor P0810BDA TO-252 Halogen-Free & Lead-Free NIKO-SEM PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 8.3mΩ 61A ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current2 TC = 25 °C ID A TC = 100 °C 39 Pulsed Drain Current1 IDM 200 Avalanche Current IAS 19 Avalanche Energy2 L = 1mH EAS 180 mJ Power Dissipation TC = 25 °C PD 69 W TC = 100 °C 27 Junction & Storage Temperature Range TJ, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 1.8 °C / W Junction-to-Ambient RJA 62.5 1Pulse width limited by maximum junction temperature. 2Package limitation current is 55A. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 100 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.4 1.85 2.4 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 80V, VGS = 0V 1 VDS=80V, VGS=0V, TJ=125 °C 10 1. GATE 2. DRAIN 3. SOURCE G D S
REV 1.0 H-24-1 N-Channel Enhancement Mode Field Effect Transistor P0810BDA TO-252 Halogen-Free & Lead-Free NIKO-SEM Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 14A 6.4 8.3 mΩ VGS = 4.5V, ID = 10A 7.4 9.6 Forward Transconductance1 gfs VDS = 5V, ID = 14A 100 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 50V, f = 1MHz 3244 pF Output Capacitance Coss 268 Reverse Transfer Capacitance Crss 11 Total Gate Charge2 Qg VDS = 50V, ID = 14A, VGS = 10V nC Gate-Source Charge2 Qgs 8.3 Gate-Drain Charge2 Qgd 8.5 Turn-On Delay Time2 td(on) 17 nS Rise Time2 tr VDD = 50V 29 Turn-Off Delay Time2 td(off) ID 14A, VGS = 10V, RGS = 6Ω 81 Fall Time2 tf 79 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 IS 57 A Forward Voltage1 VSD IF = 14A, VGS = 0V 1.2 V Reverse Recovery Time trr IF = 14A, dlF/dt = 100A / S 62 nS Reverse Recovery Charge Qrr 101 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature. 3Package limitation current is 55A.
REV 1.0 H-24-1 N-Channel Enhancement Mode Field Effect Transistor P0810BDA TO-252 Halogen-Free & Lead-Free NIKO-SEM 0 11 22 33 44 55 VDS=50V ID=14A CISS COSS CRSS 500 1000 1500 2000 2500 3000 3500 4000 0 10 20 30 40 50 0.003 0.006 0.009 0.012 0.015 0 10 20 30 40 50 VGS=10V VGS=4.5V 25℃ 125℃ -20℃ 0 1 2 3 4 5 ID, Drain-To-Source Current(A) Output Characteristics VGS, Gate-To-Source Voltage(V) VGS , Gate-To-Source Voltage(V) Gate charge Characteristics Characteristics C , Capacitance(pF) Capacitance Characteristic Qg , Total Gate Charge(nC) VDS, Drain-To-Source Voltage(V) On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=2.9V VGS=2.7V 0.006 0.012 0.018 0.024 0.03 2 4 6 8 10 ID=14A Transfer Characteristics ID, Drain-To-Source Current(A) VDS, Drain-To-Source Voltage(V)
REV 1.0 H-24-1 N-Channel Enhancement Mode Field Effect Transistor P0810BDA TO-252 Halogen-Free & Lead-Free NIKO-SEM DC 100ms 10ms 1ms 0.1 100 1000 0.1 1 10 100 1000 NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC = 1.8˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 200 400 600 800 1000 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 1.8˚C/W TC=25˚C On-Resistance VS Temperature Source-Drain Diode Forward Voltage IS , Source Current(A) Normalized Drain to Source ON-Resistance VSD, Source-To-Drain Voltage(V) TJ , Junction Temperature(˚C) r(t) , Normalized Effective Transient Thermal Resistance Transient Thermal Response Curve T1 , Square Wave Pulse Duration(s) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=14A 25℃ 150℃ 0.1 100 single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 1.8 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) VDS, Drain-To-Source Voltage(V) Single Pulse Time(s)