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REV 1.1 H-3-2 N-Channel Enhancement Mode Field Effect Transistor P0706BV SOP-8 Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS 60 V Gate-Source Voltage V GS ±20 V Continuous Drain Current TA = 25 °C ID A TA = 70 °C 13 Pulsed Drain Current1 I DM 80 Avalanche Current I AS 57 Avalanche Energy L = 0.1mH E AS 162 mJ Power Dissipation3 TA = 25 °C PD 4.1 W TA = 70 °C 2.6 Junction & Storage Temperature Range T J, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RJA 30 °C / W Junction-to-Ambient Steady-State RJA 51 Junction-to-Case Steady-State RJC 25 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. 3The Power dissipation is based on RJA t ≦10s value. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250A 60 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A 1.3 1.8 2.3 Gate-Body Leakage I GSS V DS = 0V, VGS = ±20V ±100 nA 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V(BR)DSS R DS(ON) I D 60V 7.5mΩ 16A G D S
REV 1.1 H-3-2 N-Channel Enhancement Mode Field Effect Transistor P0706BV SOP-8 Halogen-Free & Lead-Free NIKO-SEM Zero Gate Voltage Drain Current I DSS VDS = 48V, VGS = 0V 1 AVDS = 40V, VGS = 0V, TJ = 125 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 15A 4 5.8 8.5 mΩVGS = 10V , ID = 15A 3.5 5 7.5 Forward Transconductance1 g fs V DS = 5V, ID = 15A 54 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 25V, f = 1MHz 3891 pFOutput Capacitance C oss 423 Reverse Transfer Capacitance C rss 340 Gate Resistance R g V GS = 0V, VDS = 0V, f = 1MHz 0.7 Ω Total Gate Charge2 Qg(VGS=10V) VDS = 30V , ID = 15A 100 nCQg(VGS=4.5V) 54 Gate-Source Charge2 Q gs 11 Gate-Drain Charge2 Q gd 31 Turn-On Delay Time2 t d(on) VDS = 30V ID 15A, VGS = 10V, RGEN =6Ω nS Rise Time2 t r 50 Turn-Off Delay Time2 t d(off) 136 Fall Time2 t f 81 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 I S 3.4 A Forward Voltage1 V SD I F = 15A, VGS = 0V 1.2 V Reverse Recovery Time t rr IF = 15A, dlF/dt = 100A / S 34 nS Reverse Recovery Charge Q rr 25 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature. 3Package limitation current is 37A
REV 1.1 H-3-2 N-Channel Enhancement Mode Field Effect Transistor P0706BV SOP-8 Halogen-Free & Lead-Free NIKO-SEM CISS COSS CRSS 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 0 5 10 15 20 25 30 0.0 0.4 0.8 1.2 1.6 2.0 2.4 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=15A 25℃ 125℃ -20℃ 012345 0.01 0.02 0.03 0.04 0.05 2468 1 0 ID=15A 0.003 0.006 0.009 0.012 0.015 0 6 12 18 24 30 VGS=10V VGS=4.5V 0123456 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=2.9V VGS=2.7V Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A)
REV 1.1 H-3-2 N-Channel Enhancement Mode Field Effect Transistor P0706BV SOP-8 Halogen-Free & Lead-Free NIKO-SEM DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 51˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 120 150 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 51˚C/W TA=25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 51 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA 25℃ 150℃ 0.1 100 0 2 04 06 08 0 1 0 0 VDS=30V ID=15A Gate charge Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec]