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REV1.1 H-3-2 N-Channel Enhancement Mode Field Effect Transistor P0706BK PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM G DDDD SSS#1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS 60 V Gate-Source Voltage V GS ±20 V Continuous Drain Current4 TC = 25 °C ID A TC = 100 °C 46 Pulsed Drain Current1 I DM 120 Continuous Drain Current TA = 25 °C ID TA = 70 °C 14 Avalanche Current I AS 60 Avalanche Energy L = 0.1mH E AS 178 mJ Power Dissipation TC = 25 °C PD W TC = 100 °C 32 Power Dissipation3 TA = 25 °C PD W TA = 70 °C 3.2 Operating Junction & Storage Temperature Range T j, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 t ≦10s RJA 25 °C / W Junction-to-Ambient2 Steady-State RJA 52 Junction-to-Case Steady-State RJC 2.5 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on RJA t ≦10s value. 4Package limitation current is 51A. G. GATE D. DRAIN S. SOURCE PRODUCT SUMMARY V(BR)DSS R DS(ON) I D 60V 7mΩ 57A G D S
REV1.1 H-3-2 N-Channel Enhancement Mode Field Effect Transistor P0706BK PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250A 60 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A 1.3 1.8 2.3 Gate-Body Leakage I GSS V DS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current I DSS VDS = 48V, VGS = 0V 1 VDS = 40V, VGS = 0V, TJ = 55 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 20A 4.5 7 mΩ VGS = 4.5V, ID = 15A 5.8 8.5 Forward Transconductance1 g fs V DS = 5V, ID = 20A 50 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 25V, f = 1MHz 3858 pFOutput Capacitance C oss 418 Reverse Transfer Capacitance C rss 390 Gate Resistance R g V GS = 0V, VDS = 0V, f = 1MHz 1 Ω Total Gate Charge2 Q g VGS = 10V VDS = 30V , VGS = 10V, ID = 20A 108 nC VGS = 4.5V 59 Gate-Source Charge2 Q gs 14 Gate-Drain Charge2 Q gd 38 Turn-On Delay Time2 t d(on) VDS = 30V , ID 20A, VGS = 10V, RGEN =6Ω nS Rise Time2 t r 48 Turn-Off Delay Time2 t d(off) 151 Fall Time2 t f 79 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current I S 41 A Forward Voltage1 V SD I F = 20A, VGS = 0V 1.2 V Reverse Recovery Time t rr IF = 20A, dlF/dt = 100A / S 39 nS Reverse Recovery Charge Q rr 38 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
REV1.1 H-3-2 N-Channel Enhancement Mode Field Effect Transistor P0706BK PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM On-Resistance VS Gate-To-Source RDS(ON)ON-Resistance(OHM) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A)VGS, Gate-To-Source Voltage(V) Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC) 25℃ 125℃ -20 ℃ 0123456VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=4V VGS=3.5V 0123456 0 2 04 06 08 0 1 0 0 1 2 0 VDS=30V ID=20A CISS COSS CRSS 1000 2000 3000 4000 5000 6000 0 5 10 15 20 25 30 0.005 0.01 0.015 0.02 2468 1 0 ID=20A 0.005 0.01 0.015 0.02 0 4 8 1 21 62 0 VGS=10V VGS=4.5V
REV1.1 H-3-2 N-Channel Enhancement Mode Field Effect Transistor P0706BK PDFN 5x6P Halogen-Free & Lead-Free NIKO-SEM On-Resistance VS Temperature Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] VSD, Source-To-Drain Voltage(V) 0.4 0.8 1.2 1.6 2.0 2.4 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=20A 25℃150℃ 0.1 100 DC 100ms 10ms 1ms 0.01 0.1 100 1000 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 52˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 100 150 200 250 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 52˚C/W TA=25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 52 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA