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REV1.1 H-3-2 N-Channel Enhancement Mode Field Effect Transistor P0706BI TO-251 Halogen-Free & Lead-Free NIKO-SEM G D S 123 ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS 60 V Gate-Source Voltage V GS ±20 V Continuous Drain Current2 TC = 25 °C ID A TC = 100 °C 51 Pulsed Drain Current1 I DM 150 Avalanche Current I AS 57 Avalanche Energy L = 0.1mH E AS 164 mJ Power Dissipation TC = 25 °C PD 96 W TC = 100 °C 38 Junction & Storage Temperature Range T J, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 1.3 °C / W Junction-to-Ambient RJA 62.5 1Pulse width limited by maximum junction temperature. 2Package limitation current is 55A ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250A 60 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A 1.3 1.8 2.3 Gate-Body Leakage I GSS V DS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current I DSS VDS = 48V, VGS = 0V 1 VDS = 40V, VGS = 0V, TJ = 125 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 15A 6.8 8.5 mΩVGS = 10V , ID = 20A 5.5 7.5 Forward Transconductance1 g fs V DS = 5V, ID = 20A 47 S PRODUCT SUMMARY V(BR)DSS R DS(ON) I D 60V 7.5mΩ 80A 1. GATE 2. DRAIN 3. SOURCE
REV1.1 H-3-2 N-Channel Enhancement Mode Field Effect Transistor P0706BI TO-251 Halogen-Free & Lead-Free NIKO-SEM DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 25V, f = 1MHz 3805 pFOutput Capacitance C oss 424 Reverse Transfer Capacitance C rss 357 Gate Resistance R g V GS = 0V, VDS = 0V, f = 1MHz 0.7 Ω Total Gate Charge2 Qg(VGS=10V) VDS = 30V , ID = 20A 108 nC Qg(VGS=4.5V) 59 Gate-Source Charge2 Q gs 14 Gate-Drain Charge2 Q gd 37 Turn-On Delay Time2 t d(on) VDS = 30V ID 20A, VGS = 10V, RGEN =6Ω nS Rise Time2 t r 63 Turn-Off Delay Time2 t d(off) 146 Fall Time2 t f 102 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 I S 80 A Forward Voltage1 V SD I F = 20A, VGS = 0V 1.2 V Reverse Recovery Time t rr IF = 20A, dlF/dt = 100A / S 41 nS Reverse Recovery Charge Q rr 39 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature. 3Package limitation current is 55A
REV1.1 H-3-2 N-Channel Enhancement Mode Field Effect Transistor P0706BI TO-251 Halogen-Free & Lead-Free NIKO-SEM Transfer Characteristics ID, Drain-To-Source Current(A) Output Characteristics ID, Drain-To-Source Current(A) VDS, Drain-To-Source Voltage(V) VGS, Gate-To-Source Voltage(V) VGS , Gate-To-Source Voltage(V) Gate charge Characteristics C , Capacitance(pF) Capacitance Characteristic Qg , Total Gate Charge(nC) V DS, Drain-To-Source Voltage(V) On-Resistance VS Gate-To-Source RDS(ON)ON-Resistance(OHM) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A)VGS, Gate-To-Source Voltage(V) 012345 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3.5V 25℃ 125℃ -20℃ 012345 0 20 40 60 80 100 120 VDS=30V ID=20A CISS COSS CRSS 1000 2000 3000 4000 5000 6000 0 5 10 15 20 25 30 0.004 0.008 0.012 0.016 0.02 2468 1 0 ID=20A 0.004 0.008 0.012 0.016 0.02 0 4 8 1 21 62 0 VGS=10V VGS=4.5V
REV1.1 H-3-2 N-Channel Enhancement Mode Field Effect Transistor P0706BI TO-251 Halogen-Free & Lead-Free NIKO-SEM On-Resistance VS Temperature Source-Drain Diode Forward Voltage IS , Source Current(A) Normalized Drain to Source ON-Resistance VSD, Source-To-Drain Voltage(V) TJ , Junction Temperature(˚C) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) VDS, Drain-To-Source Voltage(V) Single Pulse Time(s) r(t) , Normalized Effective Transient Thermal Resistance Transient Thermal Response Curve T1 , Square Wave Pulse Duration[sec] 0.4 0.8 1.2 1.6 2.0 2.4 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=20A 25℃150℃ 0.1 100 DC 100ms 10ms 1ms 0.1 100 1000 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC =1.3˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 300 600 900 1200 1500 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 1.3˚C/W TC=25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 1.3 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC