P0706BD NIKOSEM | Alldatasheet
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REV 1.2 I-28-4 N-Channel Enhancement Mode Field Effect Transistor P0706BD TO-252 Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current2 TC = 25 °C ID A TC = 100 °C 62 Pulsed Drain Current1 IDM 150 Avalanche Current IAS 59 Avalanche Energy L = 0.1mH EAS 172 mJ Power Dissipation TC = 25 °C PD 115 W TC = 100 °C 57 Junction & Storage Temperature Range TJ, Tstg -55 to 175 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 1.3 °C / W Junction-to-Ambient RJA 62.5 1Pulse width limited by maximum junction temperature. 2Package limitation current is 55A ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 60 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.8 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 48V, VGS = 0V 1 A VDS = 40V, VGS = 0V, TJ = 125 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 15A 6.4 8.5 mΩ VGS = 10V , ID = 20A 5.1 7.5 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 7.5mΩ 87A G D S
REV 1.2 I-28-4 N-Channel Enhancement Mode Field Effect Transistor P0706BD TO-252 Halogen-Free & Lead-Free NIKO-SEM Forward Transconductance1 gfs VDS = 5V, ID = 20A 48 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz 3844 pF Output Capacitance Coss 423 Reverse Transfer Capacitance Crss 355 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 0.6 Ω Total Gate Charge2 Qg(VGS=10V) VDS = 30V , ID = 20A 106 nC Qg(VGS=4.5V) 58 Gate-Source Charge2 Qgs 14 Gate-Drain Charge2 Qgd 42 Turn-On Delay Time2 td(on) VDS = 30V ID 20A, VGS = 10V, RGEN =6Ω nS Rise Time2 tr 50 Turn-Off Delay Time2 td(off) 136 Fall Time2 tf 81 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 IS 80 A Forward Voltage1 VSD IF = 20A, VGS = 0V 1.2 V Reverse Recovery Time trr IF = 20A, dlF/dt = 100A / S 41 nS Reverse Recovery Charge Qrr 40 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature. 3Package limitation current is 55A
REV 1.2 I-28-4 N-Channel Enhancement Mode Field Effect Transistor P0706BD TO-252 Halogen-Free & Lead-Free NIKO-SEM Transfer Characteristics ID, Drain-To-Source Current(A) Output Characteristics ID, Drain-To-Source Current(A) VDS, Drain-To-Source Voltage(V) VGS, Gate-To-Source Voltage(V) VGS , Gate-To-Source Voltage(V) Gate charge Characteristics Characteristics C , Capacitance(pF) Capacitance Characteristic Qg , Total Gate Charge(nC) VDS, Drain-To-Source Voltage(V) On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) 0 1 2 3 4 5 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3.5V 25℃ 125℃ -20℃ 0 1 2 3 4 5 0 20 40 60 80 100 120 VDS=30V ID=20A CISS COSS CRSS 1000 2000 3000 4000 5000 6000 0 5 10 15 20 25 30 0.004 0.008 0.012 0.016 0.02 2 4 6 8 10 ID=20A 0.004 0.008 0.012 0.016 0.02 0 4 8 12 16 20 VGS=10V VGS=4.5V
REV 1.2 I-28-4 N-Channel Enhancement Mode Field Effect Transistor P0706BD TO-252 Halogen-Free & Lead-Free NIKO-SEM single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 1.3 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC 400 800 1200 1600 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 1.3 ˚C/W TC=25˚C DC 100ms 10ms 1ms 100 1000 0.1 1 10 100 NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC = 1.3 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) On-Resistance VS Temperature Source-Drain Diode Forward Voltage IS , Source Current(A) Normalized Drain to Source ON-Resistance VSD, Source-To-Drain Voltage(V) TJ , Junction Temperature(˚C) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) VDS, Drain-To-Source Voltage(V) Single Pulse Time(s) r(t) , Normalized Effective Transient Thermal Resistance Transient Thermal Response Curve T1 , Square Wave Pulse Duration[sec] 0.4 0.8 1.2 1.6 2.0 2.4 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=20A 25℃ 150℃ 0.1 100