P0620ED NIKOSEM | Alldatasheet

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N-Channel Enhancement Mode Field Effect Transistor P0620ED TO-252 Halogen-Free & Lead-Free NIKO-SEM REV 1.0 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25 ° C ID A TC = 100 ° C 3.8 Pulsed Drain Current1 IDM 24 Avalanche Current IAS 8.9 Avalanche Energy L = 1mH EAS 39.6 mJ Power Dissipation TC = 25 ° C PD 52 W TC = 100 ° C 20 Junction & Storage Temperature Range TJ, Tstg -55 to 150 ° C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient RJA 62.5 ° C / W Junction-to-Case RJC 2.4 1Pulse width limited by maximum junction temperature. .ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 200 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2 3 4 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 200V 580mΩ 6A 1: GATE 2: DRAIN 3: SOURCE G D S

N-Channel Enhancement Mode Field Effect Transistor P0620ED TO-252 Halogen-Free & Lead-Free NIKO-SEM REV 1.0 Zero Gate Voltage Drain Current IDSS VDS = 200V, VGS = 0V 1 A VDS = 160V, VGS = 0V, TJ = 125℃ 10 Drain-Source On-State Resistance1 RDS(ON) VGS =10V, ID = 3A 451 580 mΩ Forward Transconductance1 gfs VDS = 15V, ID = 3A 4.4 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 100V, f = 1MHz 223 pF Output Capacitance Coss 31 Reverse Transfer Capacitance Crss 9.4 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 3.5 Ω Total Gate Charge2 Qg VDS = 100V , ID =6A , VGS = 10V 7.7 nC Gate-Source Charge2 Qgs 1.2 Gate-Drain Charge2 Qgd 4.5 Turn-On Delay Time2 td(on) VDS = 100V , ID  6A, VGS = 10V, RGEN = 6Ω 7.5 nS Rise Time2 tr 20 Turn-Off Delay Time2 td(off) 12 Fall Time2 tf 27 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Continuous Current3 IS 6 A Forward Voltage1 VSD IF = 6A, VGS = 0V 1.2 V Diode Reverse Recovery Time trr IF= 6A, dI/dt=100A/μs 89 nS Diode Reverse Recovery Charge Qrr 265 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2%. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature.

N-Channel Enhancement Mode Field Effect Transistor P0620ED TO-252 Halogen-Free & Lead-Free NIKO-SEM REV 1.0 Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) 25℃ 125℃ -20℃ 0 1 2 3 4 5 6 7 0 1 2 3 4 5 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5.5V VGS=5V VGS=4.5V 0.2 0.4 0.6 0.8 0 1 2 3 4 5 6 VGS=10V 0.4 0.8 1.2 1.6 2 4 6 8 10 ID=3A CISS COSS CRSS 100 1000 0 40 80 120 160 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=3A

N-Channel Enhancement Mode Field Effect Transistor P0620ED TO-252 Halogen-Free & Lead-Free NIKO-SEM REV 1.0 Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration(S) 0 2 4 6 8 10 VDS=100V ID=6A 150℃ 25℃ 0.1 100 100 200 300 400 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 2.4 ˚C/W TC = 25˚C DC 100ms 10ms 1ms 0.1 100 1 10 100 1000 NOTE : 1.VGS = 10V 2.TC =25˚C 3.RθJC = 2.4 ˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 2.4 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC