P0610BTF NIKOSEM | Alldatasheet

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N-Channel Enhancement Mode Field Effect Transistor P0610BTF TO-220F Halogen-Free & Lead-Free NIKO-SEM REV 1.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25 ° C ID A TC = 100 ° C 41 Pulsed Drain Current1 IDM 200 Avalanche Current IAS 40 Avalanche Energy L = 1mH EAS 832 mJ MOSFET dV/dt Ruggedness dV/dt 7.7 V/nS Peak Diode Recovery dV/dt2 3 Power Dissipation TC = 25 ° C PD 62.5 W TC = 100 ° C 25 Junction & Storage Temperature Range TJ, Tstg -55 to 150 ° C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient RJA 62.5 ° C / W Junction-to-Case RJC 2 1Pulse width limited by maximum junction temperature. 2ID=20A,di/dt=100A/uS,VDD<BVdss,Starting,Tj=25℃. .ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 100 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.8 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 6.5mΩ 66A 1: GATE 2: DRAIN 3: SOURCE G D S 2 31

N-Channel Enhancement Mode Field Effect Transistor P0610BTF TO-220F Halogen-Free & Lead-Free NIKO-SEM REV 1.2 Zero Gate Voltage Drain Current IDSS VDS = 80V, VGS = 0V 1 A VDS = 80V, VGS = 0V, TJ = 125℃ 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 20A 6 8 mΩ VGS =10V, ID = 20A 5.4 6.5 Forward Transconductance1 gfs VDS = 5V, ID = 20A 133 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz 6300 pF Output Capacitance Coss 744 Reverse Transfer Capacitance Crss 219 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.3 Ω Total Gate Charge2 Qg(VGS=10V) VDS = 50V , ID =20A 120 nC Qg(VGS=4.5V) 63 Gate-Source Charge2 Qgs 19.5 Gate-Drain Charge2 Qgd 38 Turn-On Delay Time2 td(on) VDS = 50V , ID  20A, VGS = 10V, RGEN =6Ω nS Rise Time2 tr 61 Turn-Off Delay Time2 td(off) 54 Fall Time2 tf 58 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Continuous Current IS 52 A Forward Voltage1 VSD IF = 20A, VGS = 0V 1.2 V Diode Reverse Recovery Time trr IF= 20A, dI/dt=100A/μs 65 nS Diode Reverse Recovery Charge Qrr 176 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2%. 2Independent of operating temperature.

N-Channel Enhancement Mode Field Effect Transistor P0610BTF TO-220F Halogen-Free & Lead-Free NIKO-SEM REV 1.2 25℃ 150℃ 0.1 100 0 24 48 72 96 120 VDS=50V ID=20A CISS COSS CRSS 1600 3200 4800 6400 8000 0 5 10 15 20 25 30 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=20A 25℃ 125℃ -20℃ 0 1 2 3 4 5 TJ , Junction Temperature(˚C) Capacitance Characteristic VDS, Drain-To-Source Voltage(V) Qg , Total Gate Charge(nC) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=7V VGS=5V VGS=4.5V VGS=3.5V VGS=3.3V VGS=3.6V VDS, Drain-To-Source Voltage(V) Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) Normalized Drain to Source ON-Resistance C , Capacitance(pF) Gate charge Characteristics Characteristics VGS , Gate-To-Source Voltage(V) IS , Source Current(A)

N-Channel Enhancement Mode Field Effect Transistor P0610BTF TO-220F Halogen-Free & Lead-Free NIKO-SEM REV 1.2 100 200 300 400 500 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 2˚C/W TC=25˚C DC 100ms 10ms 1ms 0.1 100 1000 0.1 1 10 100 1000 NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC = 2˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) Safe Operating Area Single Pulse Maximum Power Dissipation Transient Thermal Response Curve T1 , Square Wave Pulse Duration[sec] 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 2 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) r(t) , Normalized Effective Transient Thermal Resistance Single Pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01