P0610BT NIKOSEM | Alldatasheet
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REV 1.1 E-41-4 N-Channel Enhancement Mode Field Effect Transistor P0610BT TO-220 Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current2 TC = 25 °C ID 120 A TC = 100 °C 76 Pulsed Drain Current1 IDM 375 Avalanche Current IAS 39 Avalanche Energy L = 1mH EAS 770 mJ Power Dissipation TC = 25 °C PD 208 W TC = 100 °C 83 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 ° C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 0.6 °C / W Junction-to-Ambient RJA 62.5 1Pulse width limited by maximum junction temperature. 2Package limitation current is 110A ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 100 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.8 2.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 80V, VGS = 0V 1 VDS = 80V, VGS = 0V, TJ = 125 °C 10 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 6.5mΩ 120A G D S
REV 1.1 E-41-4 N-Channel Enhancement Mode Field Effect Transistor P0610BT TO-220 Halogen-Free & Lead-Free NIKO-SEM Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 20A 5.8 8 mΩ VGS = 10V, ID = 20A 5.3 6.5 Forward Transconductance1 gfs VDS = 10V, ID = 20A 140 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz 6188 pF Output Capacitance Coss 747 Reverse Transfer Capacitance Crss 233 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.26 Ω Total Gate Charge2 Qg(VGS=10V) VDS =50V,ID = 20A 121 nC Qg(VGS=4.5V) 64.2 Gate-Source Charge2 Qgs 15.8 Gate-Drain Charge2 Qgd 30 Turn-On Delay Time2 td(on) VDD = 50V, ID 20A, VGS = 10V, RGEN =6Ω nS Rise Time2 tr 60 Turn-Off Delay Time2 td(off) 55 Fall Time2 tf 57 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 IS 120 A Forward Voltage1 VSD IF = 20A, VGS = 0V 1.2 V Reverse Recovery Time trr IF = 20A, dIs/dt= 100A/μs 58 nS Reverse Recovery Charge Qrr 136 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature. 3Package limitation current is 110A
REV 1.1 E-41-4 N-Channel Enhancement Mode Field Effect Transistor P0610BT TO-220 Halogen-Free & Lead-Free NIKO-SEM 25℃ 150℃ 0.1 100 0 24 48 72 96 120 VDS=50V ID=20A CISS COSS CRSS 1000 2000 3000 4000 5000 6000 7000 8000 0 5 10 15 20 25 30 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=20A 25℃ 125℃ -20℃ 0 1 2 3 4 5 0 1 2 3 4 5 6 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3V VGS=2.8V VGS=2.7V Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) TJ , Junction Temperature(˚C) Capacitance Characteristic VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) On-Resistance VS Temperature Normalized Drain to Source ON-Resistance C , Capacitance(pF)
REV 1.1 E-41-4 N-Channel Enhancement Mode Field Effect Transistor P0610BT TO-220 Halogen-Free & Lead-Free NIKO-SEM 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 0.6 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC DC 100ms 10ms 1ms 100 1000 1 10 100 1000 NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC = 0.6˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 600 1200 1800 2400 3000 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 0.6˚C/W TC=25˚C Safe Operating Area Single Pulse Maximum Power Dissipation Single Pulse Time(s) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] ID , Drain Current(A) Power(W) VDS, Drain-To-Source Voltage(V) Singel Pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01