P0550ED NIKOSEM | Alldatasheet
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REV 1.0 F-06-4 N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM P0550ED TO-252 Halogen-Free & Lead-Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ±30 V Continuous Drain Current2 TC = 25 °C ID A TC = 100 °C 3.2 Pulsed Drain Current1 , 2 IDM 20 Avalanche Current 3 IAS 2.5 Avalanche Energy3 EAS 31.2 mJ Power Dissipation TC = 25 °C PD 62.5 W TC = 100 °C 25 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 2 °C / W Junction-to-Ambient RJA 62.5 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed 3VDD = 50V , L = 10mH, starting TJ = 25˚C ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 500 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2 3 4 Gate-Body Leakage IGSS VDS = 0V, VGS = ±30V ±100 nA 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 500V 1.55Ω 5A G D S 100% UIS tested
REV 1.0 F-06-4 N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM P0550ED TO-252 Halogen-Free & Lead-Free Gate Voltage Drain Current IDSS VDS = 500V, VGS = 0V , TC = 25 °C 1 VDS = 400V, VGS = 0V , TC = 100 °C 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 2.5A 1.26 1.55 Ω Forward Transconductance1 gfs VDS = 10V, ID = 2.5A 6.5 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz 565 pF Output Capacitance Coss 68 Reverse Transfer Capacitance Crss 10 Total Gate Charge2 Qg VDD = 400V, ID = 5A, VGS = 10V nC Gate-Source Charge2 Qgs 3 Gate-Drain Charge2 Qgd 7 Turn-On Delay Time2 td(on) VDD = 250V, ID = 5A, RG= 6Ω nS Rise Time2 tr 25 Turn-Off Delay Time2 td(off) 98 Fall Time2 tf 30 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 IS 5 A Forward Voltage1 VSD IF =5A, VGS = 0V 1 V Reverse Recovery Time trr IF = 5A, dlF/dt = 100A / S 277 nS Reverse Recovery Charge Qrr 1.8 uC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature.
REV 1.0 F-06-4 N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM P0550ED TO-252 Halogen-Free & Lead-Free On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Characteristics VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC) 0 2 4 6 8 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V 0.4 0.8 1.2 1.6 0 1 2 3 4 5 VGS=10V 0.5 1.5 2 4 6 8 10 ID=2.5A CRSS 200 400 600 800 1000 1200 0 5 10 15 20 25 CISS COSS 0 4 8 12 16 20 VDS=400V ID=5A 25℃ 125℃ 0 2 4 6 8
REV 1.0 F-06-4 N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM P0550ED TO-252 Halogen-Free & Lead-Free On-Resistance VS Temperature Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] VSD, Source-To-Drain Voltage(V) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=2.5A 25℃ 150℃ 0.1 100 100 150 200 250 300 350 400 450 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 2˚C/W TC=25˚C DC 100ms 10ms 1ms 0.1 100 10 100 1000 NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC = 2˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 2 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC