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REV 1.0 F-52-4 N-Channel Enhancement Mode Field Effect Transistor P0508AT TO-220 Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS 80 V Gate-Source Voltage V GS ±25 V Continuous Drain Current2 TC = 25 °C ID A TC = 100 °C 60 Pulsed Drain Current1 I DM 270 Avalanche Current I AS 96 Avalanche Energy L = 0.1mH E AS 460 mJ Power Dissipation TC = 25 °C PD 113 W TC = 100 °C 45 Operating Junction & Storage Temperature Range T j, Tstg -55 to 150 ° C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RJC 1.1 °C / W Junction-to-Ambient RJA 62.5 1Pulse width limited by maximum junction temperature. 2Package limitation current is 85A. ELECTRICAL CHARACTERISTICS (T J = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITSMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250A 80 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A 2 3 4 Gate-Body Leakage I GSS V DS = 0V, VGS = ±25V ±100 nA Zero Gate Voltage Drain Current I DSS VDS = 64V, VGS = 0V 1 VDS = 60V, VGS = 0V, TJ = 125 °C 10 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V(BR)DSS R DS(ON) I D 80V 5.5mΩ 94A G D S
REV 1.0 F-52-4 N-Channel Enhancement Mode Field Effect Transistor P0508AT TO-220 Halogen-Free & Lead-Free NIKO-SEM Drain-Source On-State Resistance1 RDS(ON) VGS = 7V, ID = 20A 4.4 7 mΩ VGS = 10V, ID = 20A 3.9 5.5 Forward Transconductance1 g fs V DS = 10V, ID = 20A 66 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 25V, f = 1MHz 3876 pF Output Capacitance C oss 851 Reverse Transfer Capacitance C rss 333 Gate Resistance Rg V GS = 0V, VDS = 0V, f = 1MHz 1.3 Ω Total Gate Charge2 Qg(VGS=10V) VDS =40V,ID = 20A nC Qg(VGS=7V) 61.5 Gate-Source Charge2 Q gs 17 Gate-Drain Charge2 Q gd 30 Turn-On Delay Time2 t d(on) VDD = 40V, ID 20A, VGS = 10V, RGEN =6Ω nS Rise Time2 t r 70 Turn-Off Delay Time2 t d(off) 98 Fall Time2 t f 42 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current I S 80 A Forward Voltage1 V SD I F = 20A, VGS = 0V 1.4 V Reverse Recovery Time t rr IF = 20A, dIs/dt= 100A/μs 60 nS Reverse Recovery Charge Q rr 103 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
REV 1.0 F-52-4 N-Channel Enhancement Mode Field Effect Transistor P0508AT TO-220 Halogen-Free & Lead-Free NIKO-SEM CISS COSS CRSS 1000 2000 3000 4000 5000 6000 0 5 10 15 20 25 30 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=20A 25℃ 125℃ -20℃ 01234567 0.02 0.04 0.06 0.08 0.1 2468 1 0 ID=20A 0.002 0.004 0.006 0.008 0.01 0 7 14 21 28 35 VGS=10V VGS=7V 012345 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.8V VGS=4.2V VGS=4.5V Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature On-Resistance VS Gate-To-Source RDS(ON)ON-Resistance(OHM) VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A)
REV 1.0 F-52-4 N-Channel Enhancement Mode Field Effect Transistor P0508AT TO-220 Halogen-Free & Lead-Free NIKO-SEM single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJC = 1.1 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC 500 1000 1500 2000 2500 0.001 0.01 0.1 1 10 100 Single Pulse RθJC = 1.1 ˚C/W TC=25˚C DC 100ms 10ms 1ms 0.1 100 1000 0.1 1 10 100 1000 NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC = 1˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 25℃150℃ 0.1 100 0 1 63 24 86 48 0 VDS=40V ID=20A Gate charge Characteristics Qg , Total Gate Charge(nC) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage VSD, Source-To-Drain Voltage(V) IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec]