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Halogen & Lead-Free N-Channel Logic Level Enhancement Mode Field Effect Transistor REV1.0 G-14-2 NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage V GS ±20 V Continuous Drain Current TA = 25 °C ID 0.8 A TA = 70 °C 0.7 Pulsed Drain Current1 I DM 3.5 Avalanche Current I AS 2.6 Avalanche Energy L = 1mH E AS 3.4 mJ Power Dissipation TA = 25 °C PD 2.4 W TA = 70 °C 1.5 Operating Junction & Storage Temperature Range T j, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient RJA 53 °C / W 1Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (T J = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITMIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250A 200 V Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250A 1 2.2 3 Gate-Body Leakage I GSS V DS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current I DSS VDS = 200V, VGS = 0V 1 VDS = 160V, VGS = 0V, TJ = 55 °C 10 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V(BR)DSS R DS(ON) I D 200V 1.4Ω 0.8A G D S

Halogen & Lead-Free N-Channel Logic Level Enhancement Mode Field Effect Transistor REV1.0 G-14-2 NIKO-SEM Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 0.5A 1.2 1.4 Ω VGS = 4.5V, ID = 0.5A 1.5 1.9 Forward Transconductance1 g fs V DS = 10V, ID = 0.5A 1.2 S DYNAMIC Input Capacitance C iss VGS = 0V, VDS = 25V, f = 1MHz pFOutput Capacitance C oss 30 Reverse Transfer Capacitance C rss 8 Total Gate Charge2 Q g(VGS=10V) VDS = 160V, VGS = 10V, ID = 0.8A 3.7 nCQg(VGS=4.5V) 1.7 Gate-Source Charge2 Q gs 1.2 Gate-Drain Charge2 Q gd 1.4 Turn-On Delay Time2 t d(on) 5 nS Rise Time2 t r V DS = 100V 16 Turn-Off Delay Time2 t d(off) ID  0.8A, VGS = 10V, RGS = 6Ω 8 Fall Time2 t f 18 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current I S 0.8 A Forward Voltage1 V SD I F = 0.8A, VGS = 0V 1 V Reverse Recovery Time t rr IF = 0.8A, dI/dt = 100 A/μs 68 nS Reverse Recovery Charge Q rr 118 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature.

Halogen & Lead-Free N-Channel Logic Level Enhancement Mode Field Effect Transistor REV1.0 G-14-2 NIKO-SEM On-Resistance VS Gate-To-Source RDS(ON)ON-Resistance(OHM) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) ID , Drain-To-Source Current(A)VGS, Gate-To-Source Voltage(V) Output Characteristics ID, Drain-To-Source Current(A) Transfer Characteristics ID, Drain-To-Source Current(A) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) Capacitance Characteristic C , Capacitance(pF) VDS, Drain-To-Source Voltage(V) Gate charge Characteristics VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC) 0.4 0.8 1.2 1.6 02468 1 0 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=4.5V VGS=5V 0 0.8 1.6 2.4 3.2 4 VDS=160V ID=0.8A CISS COSS CRSS 100 120 140 160 180 0 5 10 15 20 25 30 0.4 0.8 1.2 1.6 2.4 2468 1 0 ID=0.8A 0.4 0.8 1.2 1.6 2.4 0 0.4 0.8 1.2 1.6 2 VGS=4.5V VGS=10V 25℃ 125℃ -20℃ 0.4 0.8 1.2 1.6 02468 1 0

Halogen & Lead-Free N-Channel Logic Level Enhancement Mode Field Effect Transistor REV1.0 G-14-2 NIKO-SEM On-Resistance VS Temperature Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation ID , Drain Current(A) Power(W) Single Pulse Time(s) VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance T1 , Square Wave Pulse Duration[sec] VSD, Source-To-Drain Voltage(V) 0.2 0.7 1.2 1.7 2.2 2.7 -50 -25 0 25 50 75 100 125 150 VGS=10V ID=0.8A 25℃150℃ 0.1 100 DC 100ms 10ms 1ms 0.001 0.01 0.1 1 10 100 1000 NOTE : 1.VGS= 10V 2.TA=25˚C 3.RθJA = 53˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.0001 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 53˚C/W TA=25˚C single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 53 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA