MTI85W100GC | DigiCamel IC Datasheet

Online Datasheet

Read MTI85W100GC online.

MTI85W100GC IXYS | Alldatasheet

Document overview

Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
PDF pages: 7

Technical content

High level of integration
RoHS compliant
High current capability
Aux. Terminals for MOSFET control
Terminals for soldering or welding connections
Space and weight savings Part number MTI85W100GC Applications: AC drives
in automobiles − electric power steering − starter generator
in industrial vehicles − propulsion drives − fork lift drives
in battery supplied equipment Features / Advantages:
MOSFETs in trench technology: − low RDSon − optimized intrinsic reverse diode
Package: − high level of integration − high current capability (300 A max.) − aux. terminals for MOSFET control − terminals for soldering or welding connections − isolated DCB ceramic base plate with optimized heat transfer
Space and weight savings VDSS = 100 V ID25 = 120 A RDSon typ. = 3.2 mW Three phase full Bridge with Trench MOSFETs in DCB-isolated high-current package Surface Mount Device Terms & Conditions of usage The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.

© 2017 IXYS All rights reserved 2 - 7 MTI85W100GC IXYS reserves the right to change limits, test conditions and dimensions. 20170614g MOSFETs Ratings Symbol Definitions Conditions min. typ. max. Unit VDSS drain source breakdown voltage TVJ = 25°C to 150°C 100 V VGS VGSM gate source voltage max. transient gate source voltage ±15 ±20 V V ID25 ID90 continuous drain current T C = 25°C T C = 90°C 120 A A IF25 IF90 forward current T C = 25°C T C = 90°C A A RDS(on) 1) static drain source on resistance on-chip level at TVJ = 25°C ID = 80 A; VGS = 10 V TVJ = 125°C 3.2 5.4 4 mW mW VGS(th) gate threshold voltage ID = 150 µA; VDS = VGS T VJ = 25°C 2.0 3.5 V IDSS drain source leakage current VDS = VDSS; VGS = 0 V TVJ = 25°C T VJ = 125°C 10 100 µA µA IGSS gate source leakage current VGS = ±20 V; VDS = 0 V 500 nA RG gate resistance on-chip level W Qg Qgs Qgd total gate charge gate source charge gate drain (Miller) charge VGS = 10 V; VDS = 50 V; ID = 80 A nC nC nC td(on) tr td(off) tf Eon Eoff Erec(off) turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse turn-off reverse recovery losses inductive load TVJ = 125°C VGS = 10 V; VDS = 50 V ID = 80 A; RG = 39 W 480 130 390 ns ns ns ns µJ µJ µJ RthJC thermal resistance junction to case 1.2 K/W RthJH thermal resistance junction to heatsink with heat transfer paste (IXYS test setup) 1.5 K/W 1) VDS = ID · (RDS(on) + 2 · RPin to Chip ) Source-Drain Diode VSD source drain voltage IF = 80 A; VGS = 0 V TVJ = 25°C 0.9 1.2 V QRM IRM trr reverse recovery charge max. reverse recovery current reverse recovery time VR = 50 V; IF = 80 A; RG = 39 W T VJ = 125°C di/dt = 1500 A/µs 1.3 µC A ns

© 2017 IXYS All rights reserved 3 - 7 MTI85W100GC IXYS reserves the right to change limits, test conditions and dimensions. 20170614g Part number M = MOSFET T = Trench I = Infineon Trench 85 = Current Rating [A] W = 6-Pack 100 = Reverse Voltage [V] GC = ISOPLUS-DIL Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code Standard MTI85W100GC-SMD MTI85W100GC Tube 13 516941 XXXXXXXXXXXX yywwC DCB backside YYYYYY Date Code Assembly Line Type Number Assembly Code Package ISOPLUS-DIL® Ratings Symbol Definitions Conditions min. typ. max. Unit IRMS RMS current per pin in main current paths (P+, N–, L1, L2, L3) may be additionally limited by external connections (PCB tracks) 300 A Tstg storage temperature -55 125 °C Top operation temperature -55 150 °C TVJ virtual junction temperature -55 175 °C VISOL isolation voltage t = 1 second 50/60 Hz, RMS, IISOL < 1 mA 1200 V t = 1 minute 1000 V Rpin-chip resistance terminal to chip VDS = ID·(RDS(on) + 2·Rpin to chip) 0.6 mW CP coupling capacity between shorted pins and back side metallization 160 pF FC mounting force with clip 50 250 N Weight 13 g

© 2017 IXYS All rights reserved 5 - 7 MTI85W100GC IXYS reserves the right to change limits, test conditions and dimensions. 20170614g VDS [V] ID [A] 100 150 200 250 -30 0 30 60 90 120 150 RDS(on) norm. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 RDS(on) [m] VDS [V] ID [A] 100 150 200 250 VGS [V] ID [A] 100 150 200 250 5.5 V TVJ [°C] -40 0 40 80 120 160 VDSS norm. [V] 0.8 0.9 1.0 1.1 1.2 ID [A] 0 50 100 150 200 250 RDS(on) norm. 0.0 0.5 1.0 1.5 2.0 2.5 3.05 V 5.5 V 5 V 6 V Fig. 1 Drain source breakdown voltage VDSS vs. junction temperature TVJ Fig. 2 Typ. transfer characteristics Fig. 3 Typ. output characteristics (25 °C) Fig. 4 Typ. output characteristics (125 °C) TVJ [°C] Fig. 5 Drain source on-state resistance versus junction temperature RDS(on) normalized Fig. 6 Drain source on-state resistance versus ID IDSS = 1 mA TVJ = 125°C 6 V 6.5 V 15 V 20 V VDS = 25 V RDS(on) VGS= 6.5 V 7 V 10 V 15 V 20 V TVJ = 25°C TVJ = 25 °C VGS = 10 V ID = 80 A TVJ = 25 °C 7 V 10 V 5.5 V 5 V 6 V TVJ = 125 °C VGS= 6.5 V 7 V 10 V 15 V 20 V

© 2017 IXYS All rights reserved 6 - 7 MTI85W100GC IXYS reserves the right to change limits, test conditions and dimensions. 20170614g RG [] 20 40 60 80 100 120 140 160 Eon [mJ] 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 t [ns] 100 150 200 250 300 350 QG [nC] 0 20 40 60 80 100 VGS [V] ID [A] 0 20 40 60 80 100 120 140 160 180 Eon [µJ] 120 160 200 240 280 t [ns] 100 120 140 ID [A] 0 20 40 60 80 100 120 140 160 180 Eoff [mJ] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 t [ns] 100 200 300 400 500 600 RG [] 20 40 60 80 100 120 140 160 Eoff [mJ] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 t [ns] 300 600 900 1200 1500 1800 TC [°C] 0 20 40 60 80 100 120 140 160 180 ID [A] 100 120 140 160 Fig. 7 Typical turn on gate charge Fig. 8 Drain current ID vs. case temperature TC (chip capability) Fig. 9 Typ. turn-on energy and switching times versus drain current, inductive switching tr Eoff tf td(off) Fig. 10 Typ. turn-off energy and switching times versus drain-current, inductive switching tr Eon td(on) Fig. 11 Typ. turn-on energy and switching times versus gate resistor, inductive switching Eoff td(off) tf Fig. 12 Typ. turn-off energy and switching times versus gate resistor, inductive switching Erec(off) x10 VDS = 20 V VDS = 50 V td(on) VDS = 50 V VGS = 0/10 V ID = 80 A TVJ = 125 °C VDS = 50 V VGS = 0/10 V ID = 80 A TVJ = 125 °C VDS = 50 V VGS = 0/10 V RG = 39  TVJ = 125 °C ID = 100 A TVJ = 25 °C Erec(off) x10 Eon VDS = 50 V VGS = 0/10 V RG = 39  TVJ = 125 °C TVJ = 175 °CTVJ = 175 °C

© 2017 IXYS All rights reserved 7 - 7 MTI85W100GC IXYS reserves the right to change limits, test conditions and dimensions. 20170614g diF/dt [A/µs] 0 400 800 1200 1600 2000 QRM [µC] 0.4 0.8 1.2 1.6 diF/dt [A/µs] 0 400 800 1200 1600 2000 IRM [A] tRM [ns] VSD [V] IS [A] 100 200 300 tp [s] 0.001 0.01 0.1 1 10 ZthJH [K/W] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Fig. 13 Reverse recovery time tRM of the body diode vs. diF/dt 270  82  27  IRM Fig. 14 Reverse recovery charge QRM of the body diode vs. diF/dt Fig.15 Source current IS vs. source drain voltage VSD (body diode) Fig. 16 Typ. thermal impedance junction to heatsink ZthJH with heat transfer paste (IXYS test setup) 270  27  82  tRM 270  27  IF = 80 A Vr = 50 V TVJ = 125 °C IF = 80 A VR = 50 V TVJ = 125 °C TVJ= -25 °C 25 °C 125 °C 150 °C IF = 80 A Vr = 50 V TVJ = 125 °C

Product Information

MTI85W100GC specifications and overview.

Summary

Three phase full Bridge with Trench MOSFETs in DCB-isolated high-current package

Description

Three phase full Bridge with Trench MOSFETs in DCB-isolated high-current package

Source title MTI85W100GC Datasheet(PDF) - IXYS Corporation

Related Parts

More parts from the same family.

Browse manufacturer