MTI145WX100GD | DigiCamel IC Datasheet

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MTI145WX100GD IXYS | Alldatasheet

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Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
PDF pages: 7

Technical content

High level of integration
RoHS compliant
High current capability
Aux. Terminals for MOSFET control
Terminals for soldering or welding connections
Space and weight savings Part number MTI145WX100GD Applications: AC drives
in automobiles − electric power steering − starter generator
in industrial vehicles − propulsion drives − fork lift drives
in battery supplied equipment Features / Advantages:
MOSFETs in trench technology: − low RDSon − optimized intrinsic reverse diode
Package: − high level of integration − high current capability − aux. terminals for MOSFET control − terminals for soldering or welding connections − isolated DCB ceramic base plate with optimized heat transfer
Space and weight savings VDSS = 100 V ID25 = 190 A RDSon typ. = 1.7 mW Three phase full Bridge with Trench MOSFETs in DCB-isolated high-current package L3+ L2L1 L1+ L2+ L3-L1- L2- Terms & Conditions of usage The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. Surface Mount Device

© 2017 IXYS All rights reserved 2 - 7 20170614f MTI145WX100GD IXYS reserves the right to change limits, test conditions and dimensions. MOSFETs Ratings Symbol Definitions Conditions min. typ. max. Unit VDSS drain source breakdown voltage TVJ = 25°C to 150°C 100 V VGS VGSM gate source voltage max. transient gate source voltage ±15 ±20 V V ID25 ID90 continuous drain current T C = 25°C T C = 90°C 190 145 A A RDS(on) 1) static drain source on resistance on chip level at TVJ = 25°C ID = 100 A; VGS = 10 V TVJ = 125°C 1.7 2.9 2.2 mW mW VGS(th) gate threshold voltage ID = 275 µA; VDS = VGS T VJ = 25°C 2.0 2.7 3.5 V IDSS drain source leakage current VDS = VDSS; VGS = 0 V TVJ = 25°C T VJ = 125°C 10 100 µA µA IGSS gate source leakage current VGS = ±20 V; VDS = 0 V 500 nA RG gate resistance on chip level 1.9 W Ciss Coss Crss input capacitance output capacitance reverse transfer capacitance VGS = 0 V; VDS = 50 V; f = 1 Mhz 11.1 1.94 nF nF pF Qg Qgs Qgd total gate charge gate source charge gate drain (Miller) charge VGS = 10 V; VDS = 50 V; ID = 100 A 155 nC nC nC td(on) tr td(off) tf Eon Eoff Erec(off) turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse turn-off reverse recovery losses inductive load TVJ = 125°C VGS = 10 V; VDS = 50 V ID = 100 A; RG = 27 W 135 600 200 600 ns ns ns ns µJ µJ µJ RthJC thermal resistance junction to case 0.85 K/W RthJH thermal resistance junction to heatsink with heat transfer paste (IXYS test setup) 1.1 1.4 K/W 1) VDS = ID·(RDS(on) + 2·RPin to Chip ) Source-Drain Diode IF25 IF90 forward current T C = 25°C T C = 90°C 180 105 A A VSD source drain voltage IF = 100 A; VGS = 0 V TVJ = 25°C 0.9 1.2 V QRM IRM trr reverse recovery charge max. reverse recovery current reverse recovery time VR = 50 V; IF = 100 A TVJ = 125°C RG = 27 W (di/dt = 1700 A/µs) µC A ns

© 2017 IXYS All rights reserved 3 - 7 20170614f MTI145WX100GD IXYS reserves the right to change limits, test conditions and dimensions. Part number M = MOSFET T = Trench I = Infineon Trench 145 = Current Rating [A] WX = 6-Pack with separated Phase Legs 100 = Reverse Voltage [V] GD = ISOPLUS-DIL Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code Standard MTI145WX100GD-SMD MTI145WX100GD Tube 13 518023 XXXXXXXXXXXX yywwC DCB backside YYYYYY Date Code Assembly Line Type Number Assembly Code Package ISOPLUS-DIL® Ratings Symbol Definitions Conditions min. typ. max. Unit IRMS RMS current per pin in main current paths may be additionally limited by external connections (PCB tracks) 2 pins for output L1, L2, L3 75 A Tstg storage temperature -55 125 °C Top operation temperature -55 150 °C TVJ virtual junction temperature -55 175 °C Weight 13 g FC mounting force with clip 50 250 N VISOL isolation voltage t = 1 second 50/60 Hz, RMS, IISOL < 1 mA 1200 V t = 1 minute 1000 V Rpin-chip resistance terminal to chip VDS = ID·(RDS(on) + 2·Rpin to chip) 0.5 mW CP coupling capacity between shorted pins and back side metallization 160 pF

© 2017 IXYS All rights reserved 5 - 7 20170614f MTI145WX100GD IXYS reserves the right to change limits, test conditions and dimensions. -25 0 25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 100 200 300 100 200 300 23456 100 200 300 5.5 V -40 0 40 80 120 160 0.8 0.9 1.0 1.1 1.2 6 V 0 100 200 300 400 5 V 5.5 V 5 V R DS(on) 5.5 V 5 V 6 V 6.5 V T J = 125°C 6 V TJ [°C] VDSS [V] Fig.1 Drain source breakdown voltage V DSS vs. junction temperature T VJ VGS [V] ID [A] Fig. 2 Typ. transfer characteristics VDS [V] ID [A] Fig. 3 Typ. output characteristics on die level ID [A] VDS [V] Fig. 4 Typ. output characteristics on die level R DS(on) norm. TJ [°C] Fig.5 Drain source on-state resistance R DS (on) vs. junction temperature T VJ , on die level R DS(on) normalized ID [A] Fig. 6 Drain source on-state resistance R DS(on) versus I D , on die level R DS(on) norm.R DS(on) [m Ω] V GS = 10 V I D = 38 A I DSS = 1 mA T VJ = 125°CT VJ = 25°C T VJ = 25°C T VJ = 125°C 7 V 10 V 15 V 20 V normalized V DS = 25 V V GS = 20 V 15 V 10 V 7 V 6.5 V V G S = 20 V 15 V 10 V 7 V 6.5 V

© 2017 IXYS All rights reserved 6 - 7 20170614f MTI145WX100GD IXYS reserves the right to change limits, test conditions and dimensions. 0 20 40 60 80 100 120 140 160 0 40 80 120 160 200 100 150 200 250 300 120 160 200 240 0 40 80 120 160 200 0.0 0.4 0.8 1.2 1.6 200 400 600 800 10 20 30 40 50 60 70 80 90 100 0.0 0.2 0.4 0.6 0.8 1.0 100 200 300 400 500 20 40 60 80 100 0.0 0.4 0.8 1.2 1.6 2.0 400 800 1200 1600 2000 0 20 40 60 80 100 120 140 160 180 100 150 200 250 Q G [nC] VGS [V] Fig.7 Typical turn on gate charge Fig. 8 Drain current I D vs. case temperature T C (Chip capability) Eon [µJ] ID [A] t [ns] Fig. 9 Typ. turn-on energy and switching times versus drain current, inductive switchin g t r E on t d(on) E off t f t d(off) Eoff [mJ] ID [A] t [ns] Fig. 10 Typ. turn-off energy and switching times versus drain-current, inductive switch ing t r E on t d(on) Eon [mJ] t [ns] R G [Ω] Fig. 11 Typ. turn-on energy and switching times versus gate resistor, inductive switchi ng R G [Ω] E off t d(off) t f t [ns] Eoff [mJ] Fig. 12 Typ. turn-off energy and switching times versus gate resistor, inductive switch ing T C [°C] ID [A] E rec(off) E rec(off) x10 I D = 100 A T VJ = 25°C V DS = 20 V V DS = 40 V T VJ = 175°C V DS = 50 V V GS = 0/10 V R G = 27 Ω T VJ = 125°C V DS = 50 V V GS = 10/0 V R G = 27 Ω T VJ = 125°C V DS = 50 V V GS = 0/10 V I D = 100 A T VJ = 125°C V DS = 50 V V GS = 0/10 V I D = 100 A T VJ = 125°C

© 2017 IXYS All rights reserved 7 - 7 20170614f MTI145WX100GD IXYS reserves the right to change limits, test conditions and dimensions. 0 400 800 1200 1600 2000 0.4 0.8 1.2 1.6 2.0 0 400 800 1200 1600 2000 100 200 300 0.001 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 IRM [A] trr [ns] di/dt [A/µs] Fig. 13 Typ. reverse recovery characteristics 270 Ω 82 Ω 270 Ω 27 Ω 27 Ω 82 Ω I RM t rr Q rr [nC] Fig. 14 Typ. reverse recovery characteristics VSD [V] IS [A] Fig.15 Source current I S vs. source drain voltage V SD (body diode) on die level t [s] ZthJH [K/W] Fig. 16 Typ. thermal impedance junction to heatsink Z thJH with heat transfer paste (IXYS test setup) di/dt [A/µs] 270 Ω 27 Ω 82 Ω T VJ = -25°C 25°C 125°C 150°C I F = 100A V DS = 50 V T VJ = 125°C I F = 100 A V R = 50 V T VJ = 125°C

Product Information

MTI145WX100GD specifications and overview.

Summary

Three phase full Bridge with Trench MOSFETs in DCB-isolated high-current package

Description

Three phase full Bridge with Trench MOSFETs in DCB-isolated high-current package

Source title MTI145WX100GD Datasheet(PDF) - IXYS Corporation

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