MTC120W55GC IXYS | Alldatasheet

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© 2017 IXYS All rights reserved 1 - 4 20170529 MTC120W55GC IXYS reserves the right to change limits, test conditions and dimensions. t e n t a t i v e Package: ISOPLUS-DIL®

  • High level of integration
  • RoHS compliant
  • High current capability
  • Aux. Terminals for MOSFET control
  • Terminals for soldering or welding connections
  • Space and weight savings Part number MTC120W55GC Applications: AC drives
  • in automobiles − electric power steering − starter generator
  • in industrial vehicles − propulsion drives − fork lift drives
  • in battery supplied equipment Features / Advantages:
  • MOSFETs in trench technology: − low RDSon − optimized intrinsic reverse diode
  • Package: − high level of integration − high current capability − aux. terminals for MOSFET control − terminals for soldering or welding connections − isolated DCB ceramic base plate with optimized heat transfer
  • Space and weight savings VDSS = 55 V ID25 = 150 A RDSon typ. = 2.2 mW Three phase full Bridge with Trench MOSFETs in DCB-isolated high-current package Terms & Conditions of usage The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.

© 2017 IXYS All rights reserved 2 - 4 20170529 MTC120W55GC IXYS reserves the right to change limits, test conditions and dimensions. t e n t a t i v e MOSFETs Ratings Symbol Definitions Conditions min. typ. max. Unit VDSS drain source breakdown voltage TVJ = 25°C to 150°C 55 V VGS VGSM gate source voltage max. transient gate source voltage ±15 ±20 V V ID25 ID80 ID100 continuous drain current T C = 25°C T C = 80°C T C = 100°C 150 120 106 A A A RDS(on) 1) static drain source on resistance on chip level at TVJ = 25°C ID = 100 A; VGS = 10 V TVJ = 125°C 2.2 3.7 3.1 5.3 mW mW VGS(th) gate threshold voltage ID = 1 mA; VDS = VGS T VJ = 25°C 3.0 4.0 V IDSS drain source leakage current VDS = VDSS; VGS = 0 V TVJ = 25°C T VJ = 125°C 50 1 µA µA IGSS gate source leakage current VGS = ±20 V; VDS = 0 V 500 nA RG gate resistance on chip level W Ciss Coss Crss input capacitance output capacitance reverse transfer capacitance VGS = 0 V; VDS = 25 V; f = 1 Mhz 6.97 1.03 230 nF nF pF Qg Qgs Qgd total gate charge gate source charge gate drain (Miller) charge VGS = 10 V; VDS = 28 V; ID = 100 A 100 nC nC nC td(on) tr td(off) tf Eon Eoff Erec(off) turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse turn-off reverse recovery losses inductive load TVJ = 125°C VGS = 10 V; VDS = 24 V ID = 100 A; RG = 39 W 100 110 500 100 0.12 0.53 0.01 ns ns ns ns mJ mJ mJ RthJC thermal resistance junction to case 1.0 K/W RthJH thermal resistance junction to heatsink with heat transfer paste (IXYS test setup) 1.3 K/W 1) VDS = ID·(RDS(on) + 2·RPin to Chip ) Source-Drain Diode IF25 IF80 IF100 forward current VGS = 0 V TC = 25°C T C = 80°C T C = 100°C 140 A A A VSD source drain voltage IF = 100 A; VGS = 0 V TVJ = 25°C 0.9 1.2 V QRM IRM trr reverse recovery charge max. reverse recovery current reverse recovery time VR = 24 V; IF = 100 A TVJ = 125°C di/dt = 800 A/µs 0.45 µC A ns

© 2017 IXYS All rights reserved 3 - 4 20170529 MTC120W55GC IXYS reserves the right to change limits, test conditions and dimensions. t e n t a t i v e Part number M = MOSFET T = Trench C = Trench 2nd Generation 120 = Current Rating [A] W = 6-Pack 55 = Reverse Voltage [V] GC = ISOPLUS-DIL Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code Standard MTC120W55GC-SMD MTC120W55GC Tube 13 517101 XXXXXXXXXXXX yywwC DCB backside YYYYYY Date Code Assembly Line Type Number Assembly Code Package ISOPLUS-DIL® Ratings Symbol Definitions Conditions min. typ. max. Unit IRMS RMS current per pin in main current paths (P+, N–, L1, L2, L3) may be additionally limited by external connections (PCB tracks) 300 A Tstg storage temperature -55 125 °C TVJM virtual junction temperature -55 175 °C Weight 25 g FC mounting force with clip 50 250 N VISOL isolation voltage t = 1 second 50/60 Hz, RMS, IISOL < 1 mA 1200 V t = 1 minute 1000 V Rpin-chip resistance terminal to chip VDS = ID·(RDS(on) + 2·Rpin to chip) 0.6 mW CP coupling capacity between shorted pins and back side metallization 160 pF

© 2017 IXYS All rights reserved 4 - 4 20170529 MTC120W55GC IXYS reserves the right to change limits, test conditions and dimensions. t e n t a t i v e Outlines ISOPLUS-DIL®