MMO110 IXYS | Alldatasheet

Document overview

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Technical content

Features

 Thyristor controller for AC (circuit W1C acc. to IEC) for mains frequency  Isolation voltage 3000 V~  Planar glass passivated chips  Low forward voltage drop  Lead suitable for PC board solering

Applications

 Switching and control of single and three phase AC circuits  Light and temperature control  Softstart AC motor controller  Solid state switches Advantages  Easy to mount with two screws  Space and weight savings  Improved temperature and power cycling  High power density  Small and light weight MMO 110 MLO 110 Symbol Conditions Maximum Ratings IRMS TC = 85°C, 50 - 400 Hz, module 112 A ITRMS 81 A ITAVM TC = 85°C; (180° sine) 51 A ITSM TVJ = 45°C t = 10 ms (50 Hz), sine 1000 A VR = 0 t = 8.3 ms (60 Hz), sine 1070 A TVJ = 125°C t = 10 ms (50 Hz), sine 870 A VR = 0 t = 8.3 ms (60 Hz), sine 930 A I2t TVJ = 45°C t = 10 ms (50 Hz), sine 5000 A 2s VR = 0 t = 8.3 ms (60 Hz), sine 4810 A 2s TVJ = 125°C t = 10 ms (50 Hz), sine 3780 A 2s VR = 0 t = 8.3 ms (60 Hz), sine 3630 A 2s (di/dt)cr TVJ = 125°C repetitive, I T = 50 A 100 A/µs f = 50 Hz, tP = 200 µs VD = 2/3 VDRM IG = 0.45 A non repetitive, I T = ITAVM 500 A/µs diG /dt = 0.45 A/µs (dv/dt)cr TVJ = 125°C; VDR = 2/3 VDRM 1000 V/µs R GK = ∞ ; method 1 (linear voltage rise) PGM TVJ = 125°C t p = 30 µs 10 W IT = ITAVM tp = 300 µs 5 W PGAVM 0.5 W VRGM 10 V TVJ -40...+150 °C TVJM 150 °C Tstg -40...+125 °C VISOL 50/60 Hz, RMS t = 1 min 2500 V~ IISOL ≤ 1 mA t = 1 s 3000 V~ Weight typ. 18 g Data according to IEC 60747 and to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. 241 I / H G / F G / FI / H A N MMO (W1C) MLO (W1H) A

© 2002 IXYS All rights reserved 2 - 2 Symbol Conditions Characteristic Values ID , IR TVJ = 125°C; VR = VRRM ; VD = VDRM ≤ 5m A VT IT = 150 A; TVJ = 25°C ≤ 1.57 V VT0 For power-loss calculations only 0.85 V rT 5.6 m Ω VGT VD = 6 V T VJ = 25°C ≤ 1.5 V TVJ = -40°C ≤ 1.9 V IGT VD = 6 V T VJ = 25°C ≤ 100 mA TVJ = -40°C ≤ 200 mA VGD TVJ = 125°C; VD = 2/3 VDRM ≤ 0.2 V IGD ≤ 1m A IL TVJ = 25°C; tP = 10 µs ≤ 200 mA IG = 0.45 A; diG /dt = 0.45 A/µs IH TVJ = 25°C; VD = 6 V; RGK = ∞≤ 100 mA tgd TVJ = 25°C; VD = ½ VDRM ≤ 2µ s IG = 0.45 A; diG /dt = 0.45 A/µs R thJC per thyristor; DC 0.8 K/W per module 0.4 K/W R thCH per thyristor; sine 180° el typ. 0.12 K/W per module typ. 0.06 K/W dS Creeping distance on surface 11.2 mm dA Creepage distance in air 17.0 mm a Max. allowable acceleration 50 m/s 2 MMO 110 MLO 110 10 100 1000 100 1000 100 101 102 103 104 0.1 IG VG mA mA IG 1: IGT , TVJ = 125°C 2: IGT , TVJ = 25°C 3: IGT , TVJ = -40°C µs tgd V 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W IGD , TVJ = 125°C 5 6 Limittyp. TVJ = 25°C Fig. 1 Gate trigger characteristics Fig. 2 Gate trigger delay time Dimensions in mm (1 mm = 0.0394")