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Technical content

Features

 Silicon Chip on Direct-Copper Bond (DCB) Substrate  Isolated Mounting Surface  2500V~ Electrical Isolation  Very High Current Capability Advantages  High Power Density  Low Gate Drive Requirement

Applications

 Capacitive Discharge Circuits  Ignition Circuits  Solid State Surge Protection (Electrically Isolated Tab) MMJX1H40N150 K A G G = Gate K = Cathode A = Anode Ks = Cathode Sense G K A K A G Isolated Tab Symbol Test Conditions Characteristic Values (TJ = 25C, Unless Otherwise Specified) Min. Typ. Max. VBR IA = 250A, VGK = 0V 1500 V VGK(th) IA = 250μA, VAK = VGK 2.5 5.0 V VT IT = 1000A, VGK = 15V 4.75 6.0 V rT IT > IL, VGK = 15V 1.20 m  VBO VGK = 15V 5.25 V ID VAK = 1500V, VGK = 0V 15 A TJ = 125C 1.5 mA IL 250 A IH 200 A Ks Ks Ks

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. MMJX1H40N150 IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 Symbol Test Conditions Characteristic Values (TJ = 25°C Unless Otherwise Specified) Min. Typ. Max. Ciks 2825 pF Coks VAK = 25V, VGK = 0V, f = 1MHz 164 pF Crks 50 pF Qg(on) 99 nC Qgk IC = 40A, VGK = 15V, VAK = 600V 22 nC Qga 36 nC tri 100 ns td 50 ns tri 100 ns td 50 ns RthJC 0.39 °C/W RthCS 0.12 °C/W RthJA 30 °C/W Capacitive Discharge, TJ = 25°C IA = 2000A, VGK = 15V, RG = 1 VAK = 1000V, L < 20nH, Notes 2 & 3 Notes: 1. Pulse test, t  300μs, duty cycle, d  2%. 2. It is recommended to use a gate driver capable of supplying more than 4Amps and >15V gate voltage. 3. Refer to fig. 8 & 9. Capacitive Discharge, TJ = 125°C IA = 2000A, VGK = 15V, RG = 1 VAK = 1000V, L < 20nH, Notes 2 & 3

© 2017 IXYS CORPORATION, All Rights Reserved MMJX1H40N150 Fig. 1. Extended Output Characteristics @ TJ = 25oC 200 400 600 800 1000 1200 0123456789 VAK - Volts IA - Amperes 10V VGK = 20V 17V 15V 13V 12V 11V Fig. 4. Gate Charge 0 1 02 03 04 05 06 07 08 09 0 1 0 0 QG - NanoCoulombs VGK - Volts VAK = 600V I A = 40A I G = 10mA Fig. 5. Capacitance 100 1,000 10,000 0 5 10 15 20 25 30 35 40 VAK - Volts Capacitance - PicoFarad s f = 1 MHz Ciks Coks Crks Fig. 6. Maximum Transient Thermal Impedance 0.001 0.01 0.1 Pulse Width - Seconds Z(th)JC - K / W Fig. 2. Extended Output Characteristics @ TJ = 125oC 200 400 600 800 1000 1200 0123456789 VAK - Volts IA - Amperes VGK = 20V 17V 15V 13V 11V 10V Fig. 3. Extended Output Characteristics @ TJ = - 40oC 200 400 600 800 1000 1200 0123456789 VAK - Volts IA - Amperes VGK = 20V 18V 16V 15V 14V 13V 12V 11V

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. MMJX1H40N150 IXYS REF: MMJX1_40N150(7A) 02-19-14 Fig. 8. Capacitive Discharge Fig. 9. Capacitive Discharge Waveform Fig. 7. Cauer Thermal Network i Ri () Ci (F) 1 0.014083 0.0078555 2 0.068078 0.0196550 3 0.133430 0.1199600 4 0.121939 2.5000000

© 2017 IXYS CORPORATION, All Rights Reserved K = Cathode A = Anode MMJX1H40N150 PINS: 1 - GATE 3 - Ks = Cathode Sense 4 - 8 - K = Cathode 9 - 16 - A = Anode