MMA-445933H-02

MMA-445933H-02 IXYS | Alldatasheet

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Technical content

Ta= Pa Fre Ga Ga In Ou Ou OI Po Op Th Th eatures:

• 30 dB G
• 33 dBm
• OIP3 45
• 26.0 dB
• Fully M
• Interna
• Surface
• MTTF > escriptio e MMA-4459 d 5.9 GHz fre mplifier is 26 d ttern is 802.1 e output powe -Point) radio ypical R =25 ºC, Z0=5 arameter equency R ain (Typ / M ain Flatnes put Return utput Retur utput P1dB IP3 out @ 2.5% perating Cu hermal Res hermal Res MicroW Data Please Gain m P-1dB 5 dBm Bm Linear Po Matched Inpu l Bias Tee e Mount Pac > 100 years @ on: 33H-02 is a p equency band Bm linear pow 6x 64QAM. T er stage of Wi applications f RF Perfo 50 ohm Range Min) s (Typ / M n Loss rn Loss B % EVM urrent Ran sistance (D sistance (O Wave Technolog 510-651 a contained herei e visit MwT webs out @ 2.5% E t and Output kage with Ro @ 85ºC ambie power amplifie d. Based on a wer at 2.0% E This linear pow Max and WLA for this band. rmance Max) ge Driver Stage Output Stag gy, Inc. an IXYS 1-6700 FAX 510 n is subject to ch ite www.mwtinc. Page 1 o EVM (802.11 6 t for Easy Ca oHS Complia ent temperat er with the Sta dvanced robu EVM and ach wer amplifier AN infrastruc : Vdd1=Vdd Units MHz dB +/-dB dB dB dBm dBm dBm mA e) °C /W ge) °C /W Company, 4268 0-952-4000 WEB hange without no com for informat of 8, December 2 64QAM) ascade ance ture ate-of-the-Art ust HFET dev ieves an ACP also has high ctures and acc d2=7.5V,Vg1= s B W W M

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B www.mwtinc.co otice. All rights r tion on other Mw 2012 t linear power vice technolog PR better tha h gain. Ideal a cess points. It =-0.8V,Vg2=-0 T Appli MA-44 .4 – 5.9 GHz Lin emont, CA 94538 om reserved © 2012 wT MMIC product r-added-efficie gy, the lineari n -38 dBc. T applications in t also can be 0.8,Idq1=410 Typical Data 4400-5900 2.5 / 4.5 26.0 1050 ications: 802.16d/e W 802.11a WL Point-To-Po Application 45933 z 2W High E near Power A Decemb ts. ency between ity of this pow he modulatio nclude the dri used for PTP 0mA,Idq2=62 a WiMax LAN oint Radio ns H-02 Efficiency Amplifier ber 2012 n 4.4 GHz wer n test ver and P (Point- 20mA

q2=620mA, Z 4.24.0 37Gain (db) M 4.4.40 31.5 32.0 32.5 33.0 33.5 34.0 34.5 31.0 35.0P1dB (dBm) P1dB vs Freq MicroW Data Please RF Perfo Z0=50 ohm, T 4.4 4.6 4. 8 Freq MA445933H 65 4.90 Fre quency MMA445933H02 V Wave Technolog 510-651 a contained herei e visit MwT webs rmance Ta=25 ºC 8 5.0 5.2 5 quency (GHz) H-02 Gain Re 5.15 5.40 equency (GHz) Vdd=7.5, Vgg=-08, Idd1=4 gy, Inc. an IXYS 1-6700 FAX 510 n is subject to ch ite www.mwtinc. Page 2 o : Vdd1=7.5V .4 5.6 5.8 6 esponse 5.65 416mA, Idd2=619mA Company, 4268 0-952-4000 WEB hange without no com for informat of 8, December 2 V,Vdd2=7.5V, 6.0 Return Loss (dB) 5.90 5OIP3 (dB m) M B www.mwtinc.co otice. All rights r tion on other Mw 2012 V,Vgs1=-0.8, V 4.2 4. 44.0 MMA44 4.45 4.50 4.55 4.60 4.65 4.70 4.75 4.80 4.40 OIP3 and Idd v MA-44 .4 – 5.9 GHz Lin emont, CA 94538 om reserved © 2012 wT MMIC product Vgs2=-0.8V, 4 4.6 4.8 5 Frequen 459H02 Ret 48 0 4.85 4.90 4.95 5.00 5.05 5.10 5.15 5.20 5.25 Frequency (GH vs Freqency Vdd1=Vdd 45933 z 2W High E near Power A Decemb ts. Idq1=410mA .0 5.2 5.4 ncy (GHz) urn Loss Re 52 5 5.30 5.35 5.40 5.45 5.50 5.55 5.60 5.65 5.70 Hz) 2=7.5V, Vgg1=Vgg2=- H-02 Efficiency Amplifier ber 2012 5.6 5.8 6.0 esponse57 0 5.75 5.80 5.85 5.90 940 980 1020 1060 900 1100 Idd (mA) 0.8

M SY Ig *Op Maximum YMBOL P Vdd1 Vdd2 Vgs1 Vgs2 Idq1 Idq2 g1 and Ig2 Ip Pdiss Pin max Tch Tstg peration of this de MicroW Data Please m Rating PARAMETER Drain-Sou Drain-Sour Gate-Sou Gate-Sour Drain Drain C P DC R Cha Sto evice above any 9EVM (%) EVM EVM EVM EVM Wave Technolog 510-651 a contained herei e visit MwT webs gs: (Ta= 25 RS rce Voltage D rce Voltage O rce Voltage D rce Voltage O Current Drive Current Outpu Gate Curren inch-Off Curr Power Dissip RF Input Pow annel Temper rage Temper one of these pa 10 11 12 1 E M4p4 M5p0 M5p5 M5p9 gy, Inc. an IXYS 1-6700 FAX 510 n is subject to ch ite www.mwtinc. Page 3 o 5 °C)* Driver Stage Output Stage Driver Stage Output Stage er Stage ut Stage nt rent pation wer rature ature rameters may ca 131 41 51 6 Burs EVM vs P Company, 4268 0-952-4000 WEB hange without no com for informat of 8, December 2 UNITS V V V V mA mA mA mA W dBm ºC ºC ause permanent 6 17 18 19 st Power (d out over M B www.mwtinc.co otice. All rights r tion on other Mw 2012 A damage. 9 20 21 222 dBm) Frequenc MA-44 .4 – 5.9 GHz Lin emont, CA 94538 om reserved © 2012 wT MMIC product ABSOLUTE M 500 750 9.0 +10 175 -55 to 232 42 52 6 cy 45933 z 2W High E near Power A Decemb ts. MAXIMUM 150 6 27 28 H-02 Efficiency Amplifier ber 2012

q2=620mA, Z S-param fr e q 4.000 G... 4.100 G... 4.200 G... 4.300 G... 4.400 G... 4.500 G... 4.600 G... 4.700 G... 4.800 G... 4.900 G... 5.000 G... 5.100 G... 5.200 G... 5.300 G... 5.400 G... 5.500 G... 5.600 G... 5.700 G... 5.800 G... 5.900 G... 6.000 G... MicroW Data Please Scatterin Z0=50 ohm, T eeters Vd magS11 0.645 0.583 0.507 0.405 0.303 0.230 0.174 0.126 0.109 0.127 0.154 0.189 0.253 0.316 0.357 0.399 0.435 0.451 0.458 0.462 0.465 Wave Technolog 510-651 a contained herei e visit MwT webs ng Param Ta=25 ºC dd1-Vdd2= AngS11 32.285 19.241 3.416 -13.491 -28.862 -43.280 -60.629 -77.940 -97.370 -120.196 -141.350 -153.388 -162.215 -175.950 169.576 158.603 147.247 137.700 131.897 128.232 123.778 m gy, Inc. an IXYS 1-6700 FAX 510 n is subject to ch ite www.mwtinc. Page 4 o meters: =7.5, Vgg1 magS21 43.519 50.770 56.887 58.229 60.835 58.592 56.340 57.163 54.402 51.026 61.098 49.493 57.434 59.113 50.821 50.854 45.402 38.623 35.013 31.307 28.815 A Company, 4268 0-952-4000 WEB hange without no com for informat of 8, December 2 Vdd1=Vdd2 1=Vgg2=- AngS21 -99.628 128.986 160.542 171.005 137.356 113.084 89.105 60.090 43.453 18.963 -5.354 -24.139 -52.760 -79.554 -99.637 137.348 151.993 177.226 157.753 137.326 115.352 m a 2.8 M B www.mwtinc.co otice. All rights r tion on other Mw 2012 2=7.5V, Vgs1= 0.8, Idd1= agS12 0.001 0.001 0.001 0.001 0.001 0.001 0.001 0.001 0.001 0.001 0.001 849E-4 0.001 0.001 0.001 0.002 0.002 0.002 0.002 0.002 0.003 An g -17 -17 MA-44 .4 – 5.9 GHz Lin emont, CA 94538 om reserved © 2012 wT MMIC product =-0.8, Vgs2= =416mA, Id gS12 97.671 03.298 04.699 99.811 96.209 99.810 97.310 86.109 94.205 28.273 17.399 58.159 71.236 78.476 63.283 76.446 69.971 68.668 69.718 62.603 70.218 mag 45933 z 2W High E near Power A Decemb ts. =-0.8V, Idq1=4 dd2=620m gS22 0.072 0.029 0.039 0.085 0.141 0.175 0.221 0.265 0.291 0.326 0.386 0.423 0.443 0.463 0.437 0.366 0.294 0.224 0.152 0.084 0.051 AngS 136 155 147 141 137 128 122 119 111 101 H-02 Efficiency Amplifier ber 2012 416mA, mA S22 2.256 8.433 6.794 5.711 7.883 .579 7.483 8.530 2.688 9.347 .612 .495 .180 7.581 .712 8.775 7.350 9.044 5.486 9.234 2.184

M IN Mechanic NPUT SIDE DO MicroW Data Please cal Infor .43 OT Pi 1 D Pin Pin Pin Pin Pin Wave Technolog 510-651 a contained herei e visit MwT webs mation: in Number Dot Top Left A Vdd1 GND GND Vg1 D RF In 5 I F gy, Inc. an IXYS 1-6700 FAX 510 n is subject to ch ite www.mwtinc. Page 5 o This Packa 270 .15 MAX Pack Pin Desi Signal N t Vg g GND RF I GND Vdd All dimensi Driver Stage Idd1 Figure 1 Fu Company, 4268 0-952-4000 WEB hange without no com for informat of 8, December 2 age is RoHS O .024 TYP .050 T kage Outlin ignation (To Name Pi n D In D ions are in Outp unctional D M B www.mwtinc.co otice. All rights r tion on other Mw 2012 S compliant GROUND PA OUTPUT PAD P. 10 PLCS. TYP. 2 PLCS. ne op View) n Number inches put Stage R Idd2 Diagram MA-44 .4 – 5.9 GHz Lin emont, CA 94538 om reserved © 2012 wT MMIC product .250 AD Signal Nam Vgg2 GND RF Out GND Vdd2 Vdd2 GND GND Vg2 RF Out Pin 10 Pin 9 Pin 8 Pin 7 Pin 6 45933 z 2W High E near Power A Decemb ts. GAP. .003 .050 TY INPUT PA .040 TYP. 2 me t H-02 Efficiency Amplifier ber 2012 3 TYP . YP. 8 PLCS. AD 2 PLCS.

ound loops. U ntinuity betwe cure the boar sence of swe the gate and en from the V o zero ohm re MicroW Data Please re 1 Evaluation gure 2 Hole La h larger value nditions. The Use of stitch g een the top an rd to the chas at soldering t drain inputs. Vgs power sup esistors are us Wave Technolog 510-651 a contained herei e visit MwT webs n board ayout e capacitors, e DC ground v ground via ho nd bottom gro sis; this also he board to th A 56 ohm re pply and redu sed at the inp gy, Inc. an IXYS 1-6700 FAX 510 n is subject to ch ite www.mwtinc. Page 6 o App The e Roge includ MMA- gain a stage which bias t capac requir tempe The P unifor shown condu capac reson 0603 a goo 100pf or 1000 via holes sho oles can help ound layers. T minimizes gro he chassis. T esistor is inse ucing the risk put and outpu Company, 4268 0-952-4000 WEB hange without no com for informat of 8, December 2 plication N evaluation boa rs’s 4003 mat des four DC in -445933H-02 and high linea amplifier ass h includes fou ees are built- citors are inclu red on the DC erature range PCB requires rmly over the n in Figure 2. uctive epoxy f citor bypassin nance at the fr from AVX ha od choice for t 0pf and 2.2uF uld be laid ou control the re Two mounting ound current The internal b erted in series of video oscil t 50 ohms tra M B www.mwtinc.co otice. All rights r tion on other Mw 2012 Note ard, shown in terial, 20 mil t nput connecti 2 shown in the arity amplifier sembly die att ur bias entries -in to the pack uded with ass C lines. The a e of approxima via holes with center pad fo The via hole for best therm ng near the am requency of o as a series res the first bypas F can be used ut to minimize eturn current a g holes are u loops and im bias tees insid s to the gate in llations. DC b aces. The MM MA-44 .4 – 5.9 GHz Lin emont, CA 94538 om reserved © 2012 wT MMIC product n Figure 1, is f thick, 2 oz co ons and two e center of bo . The MMA-4 tach to the m s and two RF kage. Small v sembly. Prop amplifier oper ately 85°C. h a diameter or thermal reli es can be bac mal performan mplifier shoul operation. A s sonance at 5. ss capacitor. d to maintain ed inductive re and also main used near the mproves therm de the PA are ncreasing the blocks are inc MA-445933H- 45933 z 2W High E near Power A Decemb ts. fabricated wit opper weight a RF lines. The oard is a 2 wa 445933H-02 i odified ‘02’ pa connections. value bypassi per bypassing rates over a of 20 mils pla ief and RF gro ck filled with nce. The choi d have a sho small capacit .5 GHz and w voltage stabi eturns associ ntain ground PA assembly mal conductivi e quarter-wave e effective imp cluded with as 02 has a nois H-02 Efficiency Amplifier ber 2012 th and e att high is a 3 ackage The ng g is still aced ound as ce of rt circuit tor 3.9pf will make lity under ated with y to ty in the e stubs pedance ssembly; se figure

ss than 9.0 dB ass ‘A’ amplifie gure 4 is plotte A from Idq = 1 gative slope o erations as cl put drive level e two tone lin e amplifier fro own in Figure % and 2.5%. T ualization is e d1=Vdd2=7.5 e gain stabilit g and varies 3 e EVM versus d is plotted at F 7.5 8.5 4.4 Noise Figure (dB) MicroW Data Please B. A plot of no er. At small s ed from 4.4 to 1020 mA. Th of -0.07 dB/℃ lass B is doab is 17 dBm. nearity shown m 4.4 to 4.9 G e 5 is measure The modulatio enabled when 5V and the ga ty over tempe 3 dB at a fix f s burst power t two spot freq Figure 2 N 4.5 4. 6 Freq NF vs Fr Wave Technolog 510-651 a contained herei e visit MwT webs oise figure ve signal levels t o 5.9 GHz. Th is bias condit ℃. Other class ble by backing in Figure 4 is GHz. At 22 d ed across the on is 802.16x n measuring E ate voltage is erature is show frequency. r, shown in Fi quencies poin oise Figur 6 4.7 quency (GHz) equency gy, Inc. an IXYS 1-6700 FAX 510 n is subject to ch ite www.mwtinc. Page 7 o ersus frequenc he amplifier o he drain curre ion for this am s operations c g off the PA s s swept acros Bm per tone e frequency ra x and each fra EVM performa Vgg1=Vgg2= wn in Figure 6 igures 8 and nts 4.4 GHz a re 4.8 4. 9 Company, 4268 0-952-4000 WEB hange without no com for informat of 8, December 2 cy at Idq is sh operates at Id ent Idd1 and I mplifier is clas can be set by stage controlle ss a power ra the IMD3 is 5 ange from 4.4 ame cycle has ance. The M =-0.8V for an 6 and 7. The 9 is better tha and 4.9 GHz f P1dB N10C P1dB_25C P1dB_70 C M B www.mwtinc.co otice. All rights r tion on other Mw 2012 hown in Figur dq. A plot of dd2 increase ss A. The ga y adjusting the ed by Vgg2 c nge from 15 t 50 dBc and O 4 to 4.9 GHz a s a 10 msec d MMA amplifier Idq=1020 mA e temperature an 25.5 dBm from 10C to 8 Figur 4.5 4.6 4.4 32.5 33.0 33.5 34.0 34.5 32.0 35.0P1dB _N10C MA-44 .4 – 5.9 GHz Lin emont, CA 94538 om reserved © 2012 wT MMIC product re 3. The am P1dB versus es over a rang in versus tem e gate control control voltage to 25 dBm pe OIP3 is 47 dBm at error vecto duration and bias conditio e range was ta for an EVM = 85C degrees. re 3 P1dB a 4.7 4.8 4.9 5.0 5.1 Freque 1dB vs Temper 45933 z 2W High E near Power A Decemb ts. plifier behave frequency sh ge of 1050 mA mperature has l voltage(s). S e. The maxim er tone at the m. The Burst r magnitudes runs continuo on is aken at 10 C =2% over tem and Ids 5.2 5.3 5.4 5.5 ency (GHz) rature and Freq H-02 Efficiency Amplifier ber 2012 es like a hown in A to 1100 s a Such mum output of t power s equal to ously. to 85 C mperature 5.6 5.7 5.8 5.9 quency

EVM (%) Fig 15 16 IMD3 (dBc) Tw IM Fig 10 12 EVM (%) EVM an gure 8 EVM 44.0 38Gain_N10C Gain_25C Gain_50C G ain_ 70C MicroW Data Please 17 18 1 9 Powe wo Tone IMD D3_4.4 GHz I M Figure 4 gure 6 Gain 14 16 18 Burst Po nd Ids vs Burst vs Burst P 4.2 4.4 4.6 4 Gain versus Wave Technolog 510-651 a contained herei e visit MwT webs 9 20 21 2 2 er Per Tone (dBm) D3 vs Tone Po MD3_4.7GHz I M Two Tone vs Tempera 20 22 ower (dBm) t Power over T ower and T 4.8 5.0 5.2 5 freq, GHz Frequency and Te m gy, Inc. an IXYS 1-6700 FAX 510 n is subject to ch ite www.mwtinc. Page 8 o 2 23 24 2 wer MD3_4.9GHz e ature 24 26 28 Temperature Temperature 5.4 5.6 5.8 6 mperature Company, 4268 0-952-4000 WEB hange without no com for informat of 8, December 2 0.775 0.8 0.825 0.85 0.875 0.9 0.925 Ids (A) 6EVM (%) e Figu 6.0 0Temperature_Coeff_Above_25 C T empera ture_ Coe ff_Below_ 25C M B www.mwtinc.co otice. All rights r tion on other Mw 2012 24.5 25.5 26.5 27.5 4.4 Burst Power (dBm) B F Figure 7 G 10 12 14 EVM and Ids ure 9 EVM vs 4.2 4. 44.0 0.03 0.02 0.01 0.00 0.01 0.02 0.03 0.04 0.04 Gain-Temperat MA-44 .4 – 5.9 GHz Lin emont, CA 94538 om reserved © 2012 wT MMIC product 4.5 4.6 Frequ Burst Power v BP_2% igure 5 Bu Gain-Tempe 16 18 20 Burst Power (dB s vs Burst Powe s Burst Pow 4 4.6 4.8 freq ure Coefficient (70 45933 z 2W High E near Power A Decemb ts. 4.7 uency (GHz) s Frequency BP_2.5% urst Power erature Coe 22 24 26 er over Temper wer and Tem 5.0 5.2 5.4 q, GHz C to 25C and 25C H-02 Efficiency Amplifier ber 2012 4.8 4.9 efficient 0.775 0.8 0.825 0.85 0.875 0.9 0.925 Ids (A) rature mperature 5.6 5.8 6. 0 to -10C) vs Freque e