MMA-283136-R5

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28-31GHz 4W MMIC Power Amplifier Data Sheet October, 2012 MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com MMA283136 Rev 1.4 data sheet is subject to change without notice. All rights reserved © 2012 Please visit MwT website www.mwtinc.com for information on other MwT MMIC products. Page 1 of 13 Features:  Frequency Range: 28 - 31 GHz  P1dB: +36 dBm  IM3 Level: -35 dBc @Po=26dBm/tone  Gain: 22 dB  Vdd = 5 to 6V  Idsq = 1200 to 3000mA  Input and Output Fully Matched to 50 Ω  Integrated Output Power Detector Applications:  P2P Radio  V-sat  Military Description: The MMIC is a high power amplifier MMIC in a surface mount package designed for use in transmitters that operate at frequencies between 28GHz and 31GHz. In the operational frequency band, it provides 36dBm of output power (P-3dB) and 22dB of small-signal ga in. This MMIC is also optimized for high linearity applications. This MMIC provides IM3 level of -35d Bc at Pout=26dBm/tone when biased under Vds=5V, Idsq=3000mA. Absolute Maximum Ratings: (Ta= 25 C)* *Operation of this device above any one of these parameters may cause permanent damage. SYMBOL PARAMETERS UNITS Min. Max. Vds Drain-Source Voltage V 6.5 Vg Gate-Source Voltage V -2.1 0 Ig First Gate Current mA -17 17 Pd Power Dissipation W 24 Pin max RF Input Power dBm 20 Tch Channel Temperature ºC +150 Tstg Storage Temperature ºC -55 to +150 Tmax Max. Assembly Temp (20 sec max) ºC +250 10 1312 1514 3031 2829 2627 9 16 2532 10K 10K 1.5K Functional Block Diagram

28-31GHz 4W MMIC Power Amplifier Data Sheet October, 2012 MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com MMA283136 Rev 1.4 data sheet is subject to change without notice. All rights reserved © 2012 Please visit MwT website www.mwtinc.com for information on other MwT MMIC products. Page 2 of 13 Electrical Specifications: Vds=6V, Vgs=-0.85V, Idsq=2000mA, Ta=25 C Z0=50 ohm Parameter Units Typical Data Frequency Range GHz 28-31 Gain (Typ / Min) dB 22 / 20 Gain Flatness (Typ / Max) +/-dB 2.5 / 3 Input RL(Typ/Max) dB 10/8 Output RL(Typ/Max) dB 10/8 Output P1dB(Typ/Min) dBm 35/34 Output P3dB(Typ/Min) dBm 36/35 IM3 Level (1) dBc -40 Thermal Resistance ⁰C/W 3.8 Operating Current at P1dB(Typ / Max) mA 2500 / 3000 (1) Output IP3 is measured with two tones at output power of 20 dBm/tone separated by 20 MHz.

28-31GHz 4W MMIC Power Amplifier Data Sheet October, 2012 MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com MMA283136 Rev 1.4 data sheet is subject to change without notice. All rights reserved © 2012 Please visit MwT website www.mwtinc.com for information on other MwT MMIC products. Page 3 of 13 Typical RF Performance: Vds=6V, Vgsq=-0.85V, Idsq=2000mA, Z0=50 ohm, Ta=25 ºC 20 22 24 26 28 30 32 34 36 38 40 Frequency (GHz) -20 -15 -10 S11, S21, and S22 (dB) DB(|S(1,1)|) MEAS DB(|S(2,1)|) MEAS DB(|S(2,2)|) MEAS S11, S21, and S22 vs. Frequency P-1 and P-3 vs. Frequency IM3 level [dBc] vs. Output power/tone [dBm] Po(dBm), and Ids(mA) vs. Pin(dBm)

28-31GHz 4W MMIC Power Amplifier Data Sheet October, 2012 MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com MMA283136 Rev 1.4 data sheet is subject to change without notice. All rights reserved © 2012 Please visit MwT website www.mwtinc.com for information on other MwT MMIC products. Page 4 of 13 Typical Bias dependent RF Performance: Vds=4V Bias dependent P1 vs. Frequency Bias dependent P-3 vs. Frequency @Vds=4V, Idsq=2.8A @Vds=4V, Idsq=2.2A @Vds=4V, Idsq=2.2A

28-31GHz 4W MMIC Power Amplifier Data Sheet October, 2012 MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com MMA283136 Rev 1.4 data sheet is subject to change without notice. All rights reserved © 2012 Please visit MwT website www.mwtinc.com for information on other MwT MMIC products. Page 5 of 13 Typical Bias dependent RF Performance: Vds=5V Bias dependent P1 vs. Frequency Bias dependent P-3 vs. Frequency @Vds=5V, Idsq=3A @Vds=5V, Idsq=2.6A @Vds=5V, Idsq=1.5A

28-31GHz 4W MMIC Power Amplifier Data Sheet October, 2012 MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com MMA283136 Rev 1.4 data sheet is subject to change without notice. All rights reserved © 2012 Please visit MwT website www.mwtinc.com for information on other MwT MMIC products. Page 6 of 13 Typical Bias dependent RF Performance: Vds=6V Bias dependent P1 vs. Frequency Bias dependent P-3 vs. Frequency @Vds=6V, Idsq=2.5A @Vds=6V, Idsq=2A @Vds=6V, Idsq=1.5A

28-31GHz 4W MMIC Power Amplifier Data Sheet October, 2012 MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com MMA283136 Rev 1.4 data sheet is subject to change without notice. All rights reserved © 2012 Please visit MwT website www.mwtinc.com for information on other MwT MMIC products. Page 7 of 13 Typical Over Temperature Performance: Vds=6V, Ids=2000mA, Z0=50 ohm, Ta=-40, 25, and 85 ºC 20 22 24 26 28 30 32 34 36 38 40 Frequency (GHz) S11 (dB) DB(|S(2,1)|) MEAS_25C DB(|S(2,1)|) MEAS_85C DB(|S(2,1)|) MEAS_n40C P1 over temperature P-3 over temperature 0 5 10 15 20 25 30 35 40 45 50 Frequency (GHz) 100 Stability (K) K() MEAS_25C K() MEAS_85C K() MEAS_n40C K-factor vs. Frequency S21(dB) 20 22 24 26 28 30 32 34 36 38 40 Frequency (GHz) -20 -15 -10 S11 (dB) DB(|S(1,1)|) MEAS_25C DB(|S(1,1)|) MEAS_85C DB(|S(1,1)|) MEAS_n40C S11(dB) 20 22 24 26 28 30 32 34 36 38 40 Frequency (GHz) -20 -15 -10 S22 (dB) DB(|S(2,2)|) MEAS_25C DB(|S(2,2)|) MEAS_85C DB(|S(2,2)|) MEAS_n40C S22(dB)

28-31GHz 4W MMIC Power Amplifier Data Sheet October, 2012 MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com MMA283136 Rev 1.4 data sheet is subject to change without notice. All rights reserved © 2012 Please visit MwT website www.mwtinc.com for information on other MwT MMIC products. Page 8 of 13

Applications

The MMA283136 MMIC power amplifier is designed for use as a power stage amplifier in microwave transmitters. It is ideally suited for 28 to 31GHz band V- sat transmitter applications requiring excellent saturated output power and linearity performance. This amplifier is provided as a 5x5mm QFN package, and the packaged amplifier is fully compatible with industry standard high volume surface mount PCB assembly processes. Biasing and Operation The recommended bias conditions for best performance for high power applications the MMA283136 are VDD = 6.0V, Idsq = 2000mA. Performance im provements are possible depending on applications. For high linearity requirement at higher output power up to 27dB m/tone, recommended bias conditions are Vdd=5V, Idsq=3000mA. The drain bias voltage r ange is 5 to 6V and the quiescent dr ain current biasing range is 1200mA to 3000mA. A single DC gate supply connected to Vg will bias all the amplif ier stages. Muting can be accomplished by setting Vg to the pinch-off voltage (Vp= -1.8V). The gate voltage (Vg) should be applied prior to the drain voltages (Vd1, Vd2, Vd3, and Vd4) during power up and removed after the drain voltages during power down. The RF input and output ports are DC decoupled internally. Typical DC supply connection with bi-passing capacitors for the MMA283136 is shown in following pages. Assembly Techniques GaAs MMICs are ESD sensitive. ES D preventive measures must be empl oyed in all aspects of storage, handling, and assembly. MMIC ESD precautions, handling co nsiderations, die attach and bonding methods are critical factors in successful GaAs MMIC performance and reliability.

28-31GHz 4W MMIC Power Amplifier Data Sheet October, 2012 MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com MMA283136 Rev 1.4 data sheet is subject to change without notice. All rights reserved © 2012 Please visit MwT website www.mwtinc.com for information on other MwT MMIC products. Page 9 of 13 Package Pin-out: Pin Description

4 RF Input

21 RF Output

31 Vd1

29 Vd2

28 Vd3

15, 26 Vd4

18 DET_Reference

23 DET_Output

24, 25, 32, 33 Ground 27, 30 N/C

28-31GHz 4W MMIC Power Amplifier Data Sheet October, 2012 MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com MMA283136 Rev 1.4 data sheet is subject to change without notice. All rights reserved © 2012 Please visit MwT website www.mwtinc.com for information on other MwT MMIC products. Page 10 of 13 Mechanical Information: The units are in [mm].

28-31GHz 4W MMIC Power Amplifier Data Sheet October, 2012 MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com MMA283136 Rev 1.4 data sheet is subject to change without notice. All rights reserved © 2012 Please visit MwT website www.mwtinc.com for information on other MwT MMIC products. Page 11 of 13 Application Circuit: GND GND GND GND RF IN RF OUT RF Input Vd1 Vd2 Vd4Vg1 RF Output 0.01u Note: Vd4 pins is able to supply either side. 10Ω 1uF 0.01u 10Ω 1uF 0.01u 10Ω 1uF 0.01u 10Ω 1uF Vd3 Vd4 0.01u 10Ω 1uF0.01u 10Ω 0.01u 10Ω 1uF DET_O DET_R Note: Vd4 pins must be biased from both sides.

28-31GHz 4W MMIC Power Amplifier Data Sheet October, 2012 MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com MMA283136 Rev 1.4 data sheet is subject to change without notice. All rights reserved © 2012 Please visit MwT website www.mwtinc.com for information on other MwT MMIC products. Page 12 of 13 Recommended Application Board Design: Board Material is 10mil (Dielectric) thickness Rogers 4350B with 0.5oz cupper clads. Board is soldered on a gold plated solid cupper block and adequate heat-sinking is required for 16.8W total power dissipation. Part Description C1, C2, C3, C4, C5, C6 1uF capacitor (0603) C7, C8, C9, C10, C11, C12 0.01uF Capacitor (0402) R1, R2, R3, R4, R5, R6 10Ω Resistor (0402)

28-31GHz 4W MMIC Power Amplifier Data Sheet October, 2012 MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com MMA283136 Rev 1.4 data sheet is subject to change without notice. All rights reserved © 2012 Please visit MwT website www.mwtinc.com for information on other MwT MMIC products. Page 13 of 13 Recommended Application Board Design: Board Material is 10mil (Dielectric) thi ckness Rogers 4350B with 0.5oz cupper clads. The board material and mounting pattern, as defined in the data sheet, optimizes RF performan ce and is strongly recommended. An electronic drawing of the land pattern is available upon request from MwT Sales & Application Engineering.