MKI50-06A7 IXYS | Alldatasheet

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Features

 NPT IGBT technology  low saturation voltage  low switching losses  square RBSOA, no latch up  high short circuit capability  positive temperature coefficient for easy parallelling  MOS input, voltage controlled  ultra fast free wheeling diodes  solderable pins for PCB mounting  package with copper base plate Advantages  space savings  reduced protection circuits  package designed for wave soldering Typical Applications  motor control - DC motor armature winding - DC motor excitation winding - synchronous motor excitation winding supply of transformer primary winding - power supplies - welding - X-ray - UPS - battery charger IGBTs Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C 600 V VGES ± 20 V IC25 TC = 25°C 72 A IC80 TC = 80°C 50 A RBSOA VGE = ±15 V; RG = 22 Ω ; TVJ = 125°C I CM = 100 A Clamped inductive load; L = 100 µH V CEK ≤ VCES tSC VCE = VCES ; VGE = ±15 V; RG = 22 Ω ; TVJ = 125°C 10 µs (SCSOA) non-repetitive Ptot TC = 25°C 225 W Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) IC = 50 A; VGE = 15 V; TVJ = 25°C 1.9 2.4 V TVJ = 125°C 2.2 V VGE(th) IC = 1 mA; VGE = VCE 4.5 6.5 V ICES VCE = VCES ; VGE = 0 V; TVJ = 25°C 0.6 mA TVJ = 125°C 0.7 mA IGES VCE = 0 V; VGE = ± 20 V 200 nA td(on) 50 ns tr 60 ns td(off) 300 ns tf 30 ns Eon 2.3 mJ Eoff 1.7 mJ C ies VCE = 25 V; VGE = 0 V; f = 1 MHz 2800 pF Q Gon VCE = 300V; VGE = 15 V; IC = 50 A 120 nC R thJC (per IGBT) 0.55 K/W Inductive load, TVJ = 125°C VCE = 300 V; IC = 50 A VGE = ±15 V; RG = 22 Ω IC25 = 72 A VCES = 600 V VCE(sat) typ.= 1.9 V IGBT Modules H-Bridge Short Circuit SOA Capability Square RBSOA MKI 50-06 A7 Preliminary Data

2 - 4© 2002 IXYS All rights reserved Diodes Symbol Conditions Maximum Ratings IF25 TC = 25°C 72 A IF80 TC = 80°C 45 A Symbol Conditions Characteristic Values min. typ. max. VF IF = 50 A; VGE = 0 V; TVJ = 25°C 1.6 1.8 V TVJ = 125°C 1.3 V IRM IF = 30 A; diF/dt = -500 A/µs; TVJ = 125°C 25 A trr VR = 300 V; VGE = 0 V 90 ns R thJC (per diode) 1.19 K/W Dimensions in mm (1 mm = 0.0394") MKI 50-06 A7 Equivalent Circuits for Simulation Conduction IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 0.82 V; R0 = 28 mΩ Free Wheeling Diode (typ. at TJ = 125°C) V0 = 0.89 V; R0 = 8 mΩ Thermal Response IGBT (typ.) C th1 = 0.201 J/K; Rth1 = 0.42 K/W C th2 = 1.252 J/K; Rth2 = 0.131 K/W Free Wheeling Diode (typ.) C th1 = 0.116 J/K; Rth1 = 0.973 K/W C th2 = 0.88 J/K; Rth2 = 0.277 K/W Module Symbol Conditions Maximum Ratings TVJ -40...+150 °C Tstg -40...+125 °C VISOL IISOL ≤ 1 mA; 50/60 Hz 2500 V~ M d Mounting torque (M5) 2.7 - 3.3 Nm Symbol Conditions Characteristic Values min. typ. max. R pin-chip 5m Ω dS Creepage distance on surface 6 mm dA Strike distance in air 6 mm R thCH with heatsink compound 0.02 K/W Weight 180 g

3 - 4© 2002 IXYS All rights reserved MKI 50-06 A7 0 200 400 600 800 1000 120 150 0123456 120 150 0 40 80 120 160 0123456 120 150 TVJ = 25°C TVJ = 125°C VCE = 300V IC = 50A VCE V IC VCE AIC V nC Q G -di/dt V VGE IRM trr A/µs MWI5006A7 TVJ = 125°C VR = 300V IF = 30AIRM trr 11V VGE = 17V 15V 13V A 11V VGE = 17V 15V 13V A 4 6 8 10 12 14 16 120 150 VCE = 20V V VGE A IC TVJ = 25°CTVJ = 125°C V VF IF TVJ = 25°CTVJ = 125°C A ns Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode

4 - 4© 2002 IXYS All rights reserved Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching times versus collector current times versus collector current Fig. 9 Typ. turn on energy and switching Fig.10Typ. turn off energy and switching times versus gate resistor times versus gate resistor Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance RBSOA 04 0 8 0 1 2 0 0.0 2.5 5.0 7.5 10.0 100 0 40 80 120 100 200 300 400 0.0001 0.001 0.01 0.1 0 1 02 03 04 05 06 0 200 400 600 0 1 02 03 04 05 06 0 single pulse VCE = 300V VGE = ±15V R G = 22Ω TVJ = 125°C MWI5006A7 VCE = 300V VGE = ±15V IC = 50A TVJ = 125°C 0 100 200 300 400 500 600 700 120 R G = 22 Ω TVJ = 125°C VCE = 300V VGE = ±15V R G = 22Ω TVJ = 125°C Eon VCE = 300V VGE = ±15V IC = 50A TVJ = 125°C td(on) tr Eoff td(off) tf Eon td(on) tr Eoff td(off) tf IC A IC A EoffEon t t RG Ω RG Ω VCE t s mJ Eon mJ Eoff ns t ns t ICM K/W ZthJC IGBT diode V A mJ ns nsmJ MKI 50-06 A7