MKI100-12F8 IXYS | Alldatasheet
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Technical content
Features
Fast NPT IGBTs - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance also in resonant circuits HiPerFRED TM diode: - fast reverse recovery - low operating forward voltage - low leakage current Industry Standard Package - solderable pins for PCB mounting - isolated copper base plate Typical Applications - motor control . DC motor amature winding . DC motor excitation winding . synchronous motor excitation winding - supply of transformer primary winding . power supplies . welding . X-ray . battery charger IC25 = 125 A VCES = 1200 V VCE(sat) typ. = 3.3 V IGBT Modules H Bridge Short Circuit SOA Capability Square RBSOA IGBTs Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C 1200 V VGES ± 20 V IC25 TC = 25°C 125 A IC80 TC = 80°C 85 A ICM VGE = ±15 V; RG = 5.6 Ω; TVJ = 125°C 200 A VCEK RBSOA; clamped inductive load; L = 100 µH V CES tSC VCE = 900 V; VGE = ±15 V; RG = 5.6 Ω; TVJ = 125°C 10 µs SCSOA; non-repetitive Ptot TC = 25°C 640 W Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) IC = 100 A; VGE = 15 V; TVJ = 25°C 3.3 3.9 V TVJ = 125°C 4.0 V VGE(th) IC = 4 mA; VGE = VCE 4.5 6.5 V ICES VCE = VCES; VGE = 0 V; T VJ = 25°C 1.3 mA TVJ = 125°C 4.0 mA IGES VCE = 0 V; VGE = ± 20 V 600 nA td(on) 130 ns tr 60 ns td(off) 365 ns tf 30 ns Eon 12.0 mJ Eoff 5.0 mJ Cies VCE = 25 V; VGE = 0 V; f = 1 MHz 6.5 nF QGon VCE = 600 V; VGE = ±15 V; IC = 100 A 1.1 µC RthJC (per IGBT) 0.19 K/W Inductive load, TVJ = 125°C VCE = 600 V; IC = 100 A VGE = ±15 V; RG = 5.6 Ω MKI 13, 21 14, 20
© 2004 IXYS All rights reserved 2 - 2 451 Advanced Technical Information MKI 100-12F8 Equivalent Circuits for Simulation Conduction IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 2.05 V ; R0 = 19.5 mΩ Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.27 V; R0 = 4.3 mΩ Thermal Response IGBT (typ.) Cth1 = 0.409 J/K; Rth1 = 0.14 K/W Cth2 = 2.203 J/K; Rth2 = 0.05 K/W Free Wheeling Diode (typ.) Cth1 = 0.301 J/K; Rth1 = 0.24 K/W Cth2 = 2.005 J/K; Rth2 = 0.062 K/W pins 5, 6, 7, 8 and 17 for MWI only Dimensions in mm (1 mm = 0.0394") Module Symbol Conditions Maximum Ratings TVJ operating -40...+125 °C TJM +150 °C Tstg -40...+125 °C VISOL IISOL ≤ 1 mA; 50/60 Hz 2500 V~ Md Mounting torque (M5) 3 - 6 Nm Symbol Conditions Characteristic Values min. typ. max. Rpin-chip 1.8 m Ω dS Creepage distance on surface 10 mm dA Strike distance in air 10 mm RthCH with heatsink compound 0.01 K/W Weight 300 g Diodes Symbol Conditions Maximum Ratings IF25 TC = 25°C 200 A IF80 TC = 80°C 130 A Symbol Conditions Characteristic Values min. typ. max. VF IF = 100 A; VGE = 0 V; TVJ = 25°C 2.3 2.6 V TVJ = 125°C 1.7 V IRM IF = 120 A; diF/dt = -750 A/µs; TVJ = 125°C 82 A trr VR = 600 V; VGE = 0 V 200 ns RthJC (per diode) 0.3 K/W