MKE38RK600DFELB IXYS | Alldatasheet
Document overview
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- PDF pages: 6
Technical content
Features
- Fast CoolMOS™ 1) power MOSFET 4th generation - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (UIS) - low thermal resistance due to reduced chip thickness
- Package - isolated surface to heatsink - low coupling capacity between pins and heatsink - PCB space saving - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability
Applications
- Buck / boost chopper
- Optimized for boost configuration
- PFC stage MOSFET T Symbol Conditions Maximum Ratings VDSS TVJ = 25°C to 150°C 600 V VGS ±20 V ID25 ID80 TC = 25°C TC = 80°C A A E AS EAR single pulse repetitive I D = 11 A; TC = 25°C 1950 mJ mJ dV/dt MOSFET dV/dt ruggedness V DS = 0...480 V 50 V/ns Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. RDSon ID = 44 A; VGS = 10 V 40 45 mΩ VGS(th) ID = 3 mA; VDS = VGS 2.5 3 3.5 V IDSS VDS = VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C 50 10 µA µA I GSS VDS = 0 V; VGS = ± 20 V 100 nA td(on) tr td(off) tf Eon Eoff Erec Inductive switching boost mode with diode D V DS = 380 V; ID = 30 A VGS = 10 V; RG = 33 Ω 750 1.3 0.45 0.35 ns ns ns ns mJ mJ mJ C iss Coss VGS = 0 V; VDS = 100 V; f = 1 MHz 6800 320 pF pF Q g Qgs Qgd VDS = 400 V; ID = 44 A VGS = 10 V; RG = 3.3 Ω 150 190 nC nC nC R thJC RthJH with heatsink compound (IXYS test setup) tbd 0.4 tbd K/W K/W A 3x S D K G KS nc Isolated surface to heatsink D S G KS T E72873 1) CoolMOS™ is a trademark of Infineon Technologies AG. A K D Preliminary data
© 2011 IXYS All rights reserved 2 - 6 20111102a MKE 38RK600DFELB Component Symbol Conditions Maximum Ratings TVJ Tstg -55...+150 -55...+125 V ISOL IISOL < 1 mA; 50/60 Hz 2500 V~ FC mounting force 40 ... 130 N Symbol Conditions Characteristic Values min. typ. max. CP coupling capacity between shorted pins and backside metal 90 pF d S, dA dS, dA pin - pin pin - backside metal 1.65 mm mm CTI 400 Weight 8 g Equivalent Circuits for Simulation Conduction Boost Diode (typ. at T J = 125°C) V0 = tbd V; R0 = tbd mW I Source-Drain Diode of MOSFET T Symbol Conditions Maximum Ratings IS25 IS80 TC = 25°C TC = 80°C A A Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VSD IF = 44 A; VGS = 0 V 0.9 1.0 V trr QRM IRM IF = 44 A; -diF /dt = 100 A/µs; VR = 400 V 600 ns µC A Ordering Part Number Marking on Product Delivering Mode Base Qty Ordering Code Standard MKE38RK600DFELB-TRR MKE38RK600DFELB Tape & Reel 200 510479 MKE38RK600DFELB MKE38RK600DFELB Blister 45 510231 Diode D Symbol Conditions Maximum Ratings IF25 IF80 TC = 25°C; DC TC = 80°C; DC A A Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VRRM TVJ = 25°C 600 V VF IF = 25 A TVJ = 25°C TVJ = 125°C 1.2 1.3 1.4 V I R VR = VRRM TVJ = 25°C TVJ = 125°C tbd 150 µA mA IRM IF = 30 A; VR = 350 V TVJ = 100°C -di/dt = 240 A/µs 10 A trr IF = 1 A; VR = 30 V TVJ = 100°C -di/dt = 100 A/µs 35 50 ns RthJC RthJH per diode with heatsink compound (IXYS test setup) tbd
0.7 K/W
© 2011 IXYS All rights reserved 3 - 6 20111102a MKE 38RK600DFELB A 10,05(6x) 32,7 0,5 20,05(3x) 180,1 0,30,1 2,750,1 5,50,1 13,50,1 16,250,1 190,1 250,2 0,50,1 90,1 0,2 5,5 0,1 0,550,140,05 4,85 0,2 0,2 0,05 0,1 seating plane Notes: 1) potrusion may add 0.2 mm max. on each side 2) additional max. 0.05 mm per side by punching misalignement or overlap of dam bar or bending compression 3) DCB area 10 to 50 µm convex; position of DCB area in relation to plastic rim: ±25 µm (measured 2 mm from Cu rim) 4) terminal plating: 0.2 - 1 µm Ni + 10 - 25 µm Sn (galv.) cutting edges may be partially free of plating A (8 : 1) XXXXXXXXXX yywwA Data Matrix Code Part number Date code Backside DCB Pin 1 identifier UL Logo The Data Matrix Code contains the following information in 36 digits: Digits 1 through 20: part number 21 to 25: date code (YYWWA) 26 to 31: assembly lot code 32: reserved for special information 33 to 36: may be used for subsequent module numbering within the assembly lot ~ ~ ~
© 2011 IXYS All rights reserved 4 - 6 20111102a MKE 38RK600DFELB -60 -40 -20 0 20 40 60 80 100 120 140 160 0.8 0.9 1.0 1.1 1.2 TJ [°C] VDSS [V] 0 1 2 3 4 5 6 7 8 9 10 120 160 200 240 280 320 -60 -40 -20 0 20 40 60 80 100 120 140 160 100 120 0 25 50 75 100 125 0.0 0.5 1.0 1.5 2.0 2.5 0 4 8 12 16 20 100 120 140 0 4 8 12 16 20 120 160 200 ID [A] VDS [V] 6 V T J = 25°C ID [A] VDS [V] 5 V 4.5V 6 V R DSon [m Ω] TVJ [°C] R DSon normalized ID [A] 6 V 7 V 8 V 10 V 20 V 5 VV GS = TVJ = 125°C 4.5 V V GS = 20/10/8/7 V V GS = 20/10/8/7 V 5.5 V 5 V 4.5 V I DSS = 0.25 mA ID [A] VGS [V] 98% typ. VGS = 10 V ID = 44 A 5.5 V Fig.1 Drain source breakdown voltage versus temperature T VJ Fig. 2 Typ. transfer characteristics Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics T J = 150 °C Fig.5 Drain source on-state resistance R DS(on) vs. junction temperature T VJ Fig. 6 Drain source on-state resistance, R DS(on) versus I D
© 2011 IXYS All rights reserved 5 - 6 20111102a MKE 38RK600DFELB 30 40 50 60 70 0.0 0.4 0.8 1.2 1.6 400 800 1200 1600 0 50 100 150 Q G [nC] VGS [V] 0 20 40 60 80 100 120 140 160 100 30 35 40 45 50 55 60 65 70 120 160 200 0.0 0.4 0.8 1.2 1.6 2.0 0 10 20 30 40 50 60 70 0.0 0.3 0.6 0.9 1.2 1.5 100 200 300 400 500 600 700 800 900 1000 0 10 20 30 40 50 60 70 0.0 0.5 1.0 1.5 2.0 2.5 3.0 100 120 E on t r Eon [mJ] ID [A] Eoff [mJ] t [ns] t [ns] ID [A] E off t f t d (off) Eon, Erec [mJ] R G [ Ω] t [ns] E on t r E rec t d(on) Eoff [mJ] R G [ Ω] t [ns] E off t f t d(off) R G = 33 Ω V DS = 380 V V GS = 10 V T VJ = 125°C R G = 33 Ω V DS = 380 V V GS = 10 V T VJ = 125°C I D = 44 A pulsed V DS = 120 V 400 V C [pF] VDS [V] t d(on) E rec I D = 30 A V DS = 380 V V GS = 10 V T VJ = 125°C I D = 30 A V DS = 380 V V GS = 10 V T VJ = 125°C Fig. 7 Typ. turn-on gate charge Fig. 8 Typ. capacities, MOSFET only Fig. 9 Typ. turn-on energy and switching times vs. collector current, induktive switching Fig. 10 Typ. turn-off energy and switching times vs. co llector-current, induktive switching Fig. 11 Typ. turn-on energy and switching times vs. gate resistor, induktive switching Fig. 12 Typ. turn-off energy and switching times vs. gate resistor, induktive switching
© 2011 IXYS All rights reserved 6 - 6 20111102a MKE 38RK600DFELB 40 0 60 0 80 0 10 00 12 00 1 00 10 0 12 0 14 0 16 0 18 0 20 0 0 10 2 0 30 4 0 50 6 0 70 Irr [ A ] d iF /d t [A/µs ] Irr [A] IF [A ] trr [ns ] 6 8 Ω 6 8 Ω 5 6 Ω 56 Ω 47 Ω 4 7 Ω Q rr [µ C] Q r r I r r R G = I r r t r r IF [A] V F [ V ] 3 3 Ω R G = 3 3 Ω V R = 3 8 0 V T V J = 1 2 5 °C T V J = 12 5 °C 2 5 °C IF = 30 A VR = 380 V TVJ = 125°C F i g. 13 T y p. forward ch ar a cteri sti cs of di ode D F i g. 14 Typ. r e verse r e cover y characte r i stics o f di o de D F i g . 15 T yp . r e ve rse r e cove ry characte r i stics o f di o de D