MKE11R600DCGFC IXYS | Alldatasheet

Document overview

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Technical content

Features

  • Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface - 2500 V electrical isolation - low drain to tab capacitance (< 40 pF)
  • Fast CoolMOS™ 1) power MOSFET 4th generation - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (UIS) - low thermal resistance due to reduced chip thickness
  • Enhanced total power density
  • SiC Boost Diode - no reverse recovery current

Applications

  • Switched mode power supplies (SMPS)
  • Uninterruptible power supplies (UPS)
  • Power factor correction (PFC) Advantages
  • Easy assembly: no screws or isolation foils required
  • Space savings
  • High power density
  • High reliability MOSFET T Symbol Conditions Maximum Ratings VDSS TVJ = 25°C 600 V VGS ± 20 V ID25 ID90 TC = 25°C TC = 90°C A A E AS EAR single pulse repetitive 522 0.79 mJ mJ dV/dt MOSFET dV/dt ruggedness V DS = 0...480 V 50 V/ns Electrically isolated back surface

2500 V electrical isolation

ID = 7.9 A; TC = 25°C Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. RDSon VGS = 10 V; ID = 12 A 150 165 mW VGS(th) VDS = VGS; ID = 0.79 mA 2.5 3 3.5 V IDSS VDS = 600 V; VGS = 0 V TVJ = 25°C TVJ = 125°C 10 1 µA µA IGSS VGS = ± 20 V; VDS = 0 V 100 nA Ciss Coss VGS = 0 V; VDS = 100 V f = 1 MHz 2000 100 pF pF Q g Qgs Qgd VGS = 0 to 10 V; VDS = 400 V; ID = 12 A 52 nC nC nC t d(on) tr td(off) tf Eon Eoff Inductive switching TVJ = 125°C VGS = 0/10 V; VDS = 380 V ID = 12 A; RG = 10 W 0.09 0.01 ns ns ns ns mJ mJ E rec off no reverse recovery current due to absence of minority carrier injection mJ RthJC RthJH with heat transfer paste (IXYS test setup) 1.35

1.1 K/W

1) CoolMOS™ is a trademark of Infineon Technologies AG. ISOPLUS i4™ isolated back surface E72873 D T SiC

© 2010 IXYS All rights reserved 2 - 6 20100920a MKE 11R600DCGFC IXYS reserves the right to change limits, test conditions and dimensions. MOSFET T Source-Drain Diode Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. IS VGS = 0 V 12 A VSD IF = 12 A; VGS = 0 V 0.9 1.2 V trr QRM IRM IF = 12 A; -diF /dt = 100 A/µs; VR = 400 V 390 7.5 ns µC A Component Symbol Conditions Maximum Ratings T VJ Tstg operating storage -55...+150 -55...+125 V ISOL IISOL < 1 mA; 50/60 Hz 2500 V~ FC mounting force with clip 20...120 N Symbol Conditions Characteristic Values min. typ. max. CP coupling capacity between shorted pins and mounting tab in the case pF dS, dA dS, dA pin - pin pin - backside metal 1.7 5.5 mm mm Weight 9 g Symbol Conditions Characteristic Values min. typ. max. VF IF = 8 A TVJ = 25°C 1.5 1.7 V IF = 8 A TVJ = 150°C 1.9 A IR VR = VRRM TVJ = 25°C TVJ = 150°C 100 µA µA I FSM t = 10 ms (50 Hz), sine; TVJ = 25°C 59 A QC tC IF = IFmax; VR = 400 V; TVJ = 150°C di/dt = 200 A/µs 1) nC ns RthJC RthJH with heat transfer paste (IXYS test setup) 4.0

3.1 K/W

1) tC is the time constant for the capacitive displacement current waveform (independent from TJ, ILOAD and di/dt), different from trr which is dependent on TJ, ILOAD and di/dt. No reverse recovery time constant trr due to absence of minority carrier injection SiC Boost Diode D Symbol Conditions Maximum Ratings VRRM TVJ = 25°C to 150°C 600 V IF25 IF90 TC = 25°C TC = 90°C 9.5 A A

© 2010 IXYS All rights reserved 3 - 6 20100920a MKE 11R600DCGFC IXYS reserves the right to change limits, test conditions and dimensions. ISOPLUS i4TM Outline 4x e E W A C b2 b L D R Q 1 2 53 4 MIN MAX MIN MAX A 4.83 5.21 0.190 0.205 A1 2.59 3.00 0.102 0.118 A2 1.17 2.16 0.046 0.085 b 1.14 1.40 0.045 0.055 b2 1.47 1.73 0.058 0.068 b4 2.54 2.79 0.100 0.110 C 0.51 0.74 0.020 0.029 D 20.80 21.34 0.819 0.840 D1 14.99 15.75 0.590 0.620 D2 1.65 2.03 0.065 0.080 E 19.56 20.29 0.770 0.799 E1 16.76 17.53 0.660 0.690 e L 19.81 21.34 0.780 0.840 L1 2.11 2.59 0.083 0.102 Q 5.33 6.20 0.210 0.244 R 2.54 4.57 0.100 0.180 W ― 0.10 ― 0.004 DIM. MILLIMETER INCHES 3.81 BSC 0.15 BSC Die konvexe Form des Substrates ist typ. < 0.05 mm über der Kunststoffoberfläche der Bauteilunterseite The convexbow of substrate is typ. < 0.05 mm over plastic surface level ofdevice bottom side 100 150 200 0 40 80 120 160 T C [°C ] P tot ]W[ 4.5 V 5 V 5.5 V 6 V 8 V 10V 1 2V 20 V 0 5 10 15 20 V DS [V ] I D ]A[ 4.5 V 5 V 5.5 V 6 V 8 V 10 V 1 2V 20 V 0 5 10 15 20 V DS [V ] I D ]A[ TJ = 25°C VGS = VGS = TJ = 125°C 0 40 80 120 160 100 120 TC [°C] Ptot [ W]

© 2010 IXYS All rights reserved 4 - 6 20100920a MKE 11R600DCGFC IXYS reserves the right to change limits, test conditions and dimensions. single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10010-110-210-310-410-5 100 10-1 10-2 t p [s] Z CJht ]W/K[ typ 98% 0.1 0.2 0.3 0.4 0.5 -60 -20 20 60 100 140 180 T j [°C ] R )no(SD [Ω] 25 °C 150 °C 100 0 2 4 6 8 10 V GS [V ] I D ]A[ 7 V 10 V 0.2 0.4 0.6 0.8 1.2 0 10 20 30 40 50 I D [A] R )no(SD [Ω] 5 V 5.5 V 6 V 6.5 V 1 20 V 40 0V 0 10 20 30 40 Q gate [nC ] V SG ]V[ 25 °C 150 °C 25 °C, 98% 150 °C, 98% 102 101 100 10-1 0 0.5 1 1.5 2 V S D [V ] I F ]A[ Ciss Coss Crss 105 104 103 102 101 100 0 100 200 300 400 500 V DS [V ] C ]Fp[ 100 200 300 400 500 600 20 60 100 140 180 T j [°C ] E SA ]Jm[ 540 580 620 660 700 -60 -20 20 60 100 140 180 T j [°C ] V )SSD(RB ]V[ VDS = TJV = 150°C ID = 12 A VGS = 10 V VDS > 2·RDS(on) max · ID TJ = TJ = VDS = 120 V VGS = 0 V f = 1 MHz ID = 7.9 A ID = 0.75 mA D = tp/T ID = 12 A pulsed Fig. 5 Drain-source on-state resistanceFig. 4 Typ. drain-source on-state resistance Fig. 7 Forward characteristic of reverse diode Fig. 8 Typ. gate charge Fig. 10 Avalanche energy Fig. 11 Drain-source breakdown voltage Fig. 6 Typ. transfer characteristics Fig. 9 Typ. capacitances

© 2010 IXYS All rights reserved 5 - 6 20100920a MKE 11R600DCGFC IXYS reserves the right to change limits, test conditions and dimensions. 0 10 20 30 40 50 0.00 0.02 0.04 0.06 0.08 0.10 100 200 300 400 500 0 1 2 3 4 VF [V] IF [A] 0 20 40 60 80 100 120 140 160 0 10 20 30 40 50 0.0 0.1 0.2 0.3 0.4 0 5 10 15 20 25 0.00 0.02 0.04 0.06 0.08 0.10 100 0 5 10 15 20 25 0.00 0.05 0.10 0.15 0.20 0.25 E on t r ID [A] TC [°C] Eon [mJ] ID [A] Eoff [mJ] t [ns] t [ns] ID [A] E off t f t d(off) Eon [mJ] RG [ Ω] t [ns] E on t r t d(on) Eoff [mJ] RG [ Ω] t [ns] E off t f t d(off) I C = 12 A V CE = 380 V V GS = 10 V T VJ = 125°C I C = 12 A V CE = 380 V V GS = 10 V T VJ = 125°C R G = 10 Ω V DS = 380 V V GS = 0/10 V T VJ = 125°C 25°C 100°C 125°C 150°C t d(on) R G = 10 Ω V DS = 380 V V GS = 0/10 V T VJ = 125°C Fig. 12 Forward characteristic of boost diode Fig. 13 Drain current ID versus case temperature TC Fig. 14 Typ. turn-on energy and switching times versus drain current, inductive switching Fig. 15 Typ. turn-off energy and switching times versus drain current, inductive switching Fig. 16 Typ. turn-on energy and switching times versus gate resistor, inductive switching Fig. 17 Typ. turn-off energy and switching times versus gate resistor, inductive switching

© 2010 IXYS All rights reserved 6 - 6 20100920a MKE 11R600DCGFC IXYS reserves the right to change limits, test conditions and dimensions.

0.9 VGS

0.1 VGS

0.9 ID 0.9 ID 0.1 ID VGS VDS ID 0.1 ID t t tr tf td(on) td(off) Fig. 20 Definition of switching times 1 10 100 1000 10000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ZthJH [K/W] t [ms] 1 10 100 1000 10000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 ZthJH [K/W] t [ms] Fig. 18 Typ. transient thermal impedances of IGBT with heat transfer paste (IXYS test setup) Fig. 19 Typ. transient thermal impedances of boost diode with heat transfer paste (IXYS test setup)